DSU024N10N3A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DSU024N10N3A Datasheet (PDF)

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DSU024N10N3A 100V/1.8m /272A N-MOSFET Features Key Parameters VDS AEC-Q101 qualified 100V RDS(on)typ. Low on resistance 1.8m Low reverse transfer capacitances VTH 3V ID 100% single pulse avalanche energy test 272A Ciss@10V 100% VDS test 7035pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 27nC Applications Power switching applications

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DSU021N10NA 300A 100V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET 2 D V = 100V DS utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same R = 1.6m DS(on) (TYP) G time. Which accords with the RoHS standard. 1 I = 300A D 3 S 2 Features Low on resistance Low ga

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DSU023N10N3 100V/2m /281A N-MOSFET Features Key Parameters VDS 100V Advanced SGT2 silicon technology utilized Extremely low on-resistance RDS(on) RDS(on)typ. 2m ID 281A Low reverse transfer capacitances 100% single pulse avalanche energy test Vth 3V Ciss@10V 12750pF 100% VDS test Pb-Free plating / Halogen-Free / RoHS compliant Qgd 24.3nC Applications

Otros transistores... DSP038N08NA , DSP051N10N , DSP060N04LA , DSP070N10L3A , DSU007N04NA , DSU011N08N3A , DSU021N10NA , DSU023N10N3 , IRF3710 , DSU035N10N3A , DSU035N14N3 , DTD080N07N , DTE025N04NA , DHS031N07P , DHS035N10 , DHS035N10E , DHS035N88 .