DHS031N07P Todos los transistores

 

DHS031N07P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DHS031N07P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 68 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 98.5 nS
   Cossⓘ - Capacitancia de salida: 1009 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0034 Ohm
   Paquete / Cubierta: DFN5X6
 

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DHS031N07P Datasheet (PDF)

 ..1. Size:775K  cn wxdh
 dhs031n07p.pdf pdf_icon

DHS031N07P

DHS031N07P100A 68V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 Dadvanced splite gate trench technology design, providedV =68VDSSexcellent Rdson and low gate charge. Which accords withGR =2.9mDS(on) (TYP)the RoHS standard.13 SI Silicon limit= 150AD2 FeaturesIPackage limit 100A= Fas

 9.1. Size:988K  cn wxdh
 dhs035n10 dhs035n10e.pdf pdf_icon

DHS031N07P

DHS035N10&DHS035N10E180A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFETV = 100VDSSutilizes advanced Split Gate Trench technology, which 2 Dprovides excellent Rdson and low Gate charge at the sameR = 3.2mTO-220DS(on) (TYP)time. Which accords with the RoHS standard.G1R = 3.0mTO-263DS(on) (TYP)3 S

 9.2. Size:1016K  cn wxdh
 dhs030n88 dhs030n88f dhs030n88i dhs030n88e.pdf pdf_icon

DHS031N07P

DHS030N88/DHS030N88F/DHS030N88I/DHS030N88E174A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 3.0mDS(on) (TYP)the RoHS standard.13 SI = 174AD2 Features Fast switching

 9.3. Size:975K  cn wxdh
 dhs035n88 dhs035n88e dhs035n88i.pdf pdf_icon

DHS031N07P

DHS035N88/DHS035N88E/DHS035N88I175A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionV = 80VDSSThese N-channel enhancement mode power mosfets used2 Dadvanced splite gate trench technology design, providedR =3.6m(TO-220&262)DS(on)(TYP)excellent Rdson and low gate charge. Which accords withGthe RoHS standard.R = 3.3m(TO-263)DS(on) (TYP)13 SI =175AD

MOSTRAR MÁS

Otros transistores... DSU011N08N3A , DSU021N10NA , DSU023N10N3 , DSU024N10N3A , DSU035N10N3A , DSU035N14N3 , DTD080N07N , DTE025N04NA , IRFB4115 , DHS035N10 , DHS035N10E , DHS035N88 , DHS035N88E , DHS035N88I , DHS045N88D , DHS045N88E , DHS045N88F .

 

 
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