DSG054N10N3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DSG054N10N3  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 188 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 140 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 39 nS

Cossⓘ - Capacitancia de salida: 446 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0054 Ohm

Encapsulados: TO220

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DSG054N10N3 datasheet

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 dse054n10n3 dsg054n10n3.pdf pdf_icon

DSG054N10N3

DSE054N10N3&DSG054N10N3 100V/4.6m /140A N-MOSFET Features Key Parameters VDS Low on resistance 100V RDS(on)typ. TO-263 Low reverse transfer capacitances 4.6m RDS(on)typ. TO-220 100% single pulse avalanche energy test 4.8m ID 100% VDS test 140A Pb-Free plating / Halogen-Free / RoHS compliant Vth 3V Ciss@10V 4912pF Qgd 16nC Applications M

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 dsg053n08n3 dse051n08n3.pdf pdf_icon

DSG054N10N3

DSG053N08N3&DSE051N08N3 120A 80V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power mosfets used 2 D V = 80V DSS advanced splite gate trench technology design, provided R = 4.8m T0-220 DS(on) (TYP) excellent Rdson and low gate charge. Which accords with G the RoHS standard. R = 4.4m T0-263 DS(on) (TYP) 1 3 S I = 120A D 2 F

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 dsg059n15na.pdf pdf_icon

DSG054N10N3

DSG059N15NA 150A 150V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which 2 D V = 150V DSS provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard. G R = 5.0m DS(on) (TYP) 1 3 S 2 Features I = 150A D Low on resistance Low ga

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 dsg052n14n dse050n14n.pdf pdf_icon

DSG054N10N3

DSG052N14N/DSE050N14N 180A 135V N-channel Enhancement Mode Power MOSFET 1 Description 2 D V =135V DSS This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which R =3.7m TO-263 DS(on) (TYP) G provides excellent Rdson and low Gate charge at the same 1 R =3.9m TO-220 DS(on) (TYP) time. Which accords with the RoHS standard. 3 S I

MOSTRAR MÁS

Otros transistores... DSG028N10NA, DSG030N10N3, DSG041N08NA, DSG045N14N, DSG047N08N3, DSG048N08N3, DSG052N14N, DSG053N08N3, IRF1010E, DSG059N15NA, DSG070N10L3, DSG070N15NA, DSG108N20NA, DSG140N12N3, DSG270N12N3, DSN108N20N, DHS025N88E