DHS030N88 Todos los transistores

 

DHS030N88 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DHS030N88
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 320 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 174 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 105.7 nS
   Cossⓘ - Capacitancia de salida: 1112 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0038 Ohm
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de MOSFET DHS030N88

 

Principales características: DHS030N88

 ..1. Size:1016K  cn wxdh
 dhs030n88 dhs030n88f dhs030n88i dhs030n88e.pdf pdf_icon

DHS030N88

DHS030N88/DHS030N88F/ DHS030N88I/DHS030N88E 174A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 3.0m DS(on) (TYP) the RoHS standard. 1 3 S I = 174A D 2 Features Fast switching

 9.1. Size:775K  cn wxdh
 dhs031n07p.pdf pdf_icon

DHS030N88

DHS031N07P 100A 68V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D advanced splite gate trench technology design, provided V =68V DSS excellent Rdson and low gate charge. Which accords with G R =2.9m DS(on) (TYP) the RoHS standard. 1 3 S I Silicon limit = 150A D 2 Features I Package limit 100A = Fas

 9.2. Size:988K  cn wxdh
 dhs035n10 dhs035n10e.pdf pdf_icon

DHS030N88

DHS035N10&DHS035N10E 180A 100V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET V = 100V DSS utilizes advanced Split Gate Trench technology, which 2 D provides excellent Rdson and low Gate charge at the same R = 3.2m TO-220 DS(on) (TYP) time. Which accords with the RoHS standard. G 1 R = 3.0m TO-263 DS(on) (TYP) 3 S

 9.3. Size:975K  cn wxdh
 dhs035n88 dhs035n88e dhs035n88i.pdf pdf_icon

DHS030N88

DHS035N88/DHS035N88E/DHS035N88I 175A 80V N-channel Enhancement Mode Power MOSFET 1 Description V = 80V DSS These N-channel enhancement mode power mosfets used 2 D advanced splite gate trench technology design, provided R =3.6m (TO-220&262) DS(on)(TYP) excellent Rdson and low gate charge. Which accords with G the RoHS standard. R = 3.3m (TO-263) DS(on) (TYP) 1 3 S I =175A D

MOSTRAR MÁS

Otros transistores... DSG070N15NA , DSG108N20NA , DSG140N12N3 , DSG270N12N3 , DSN108N20N , DHS025N88E , DHS025N88F , DHS025N88I , BS170 , DHS030N88E , DHS030N88F , DHS030N88I , DHS046N10 , DHS046N10B , DHS046N10D , DHS046N10E , DHS046N10F .

 

 
Back to Top

 


 
.