DHS030N88E Todos los transistores

 

DHS030N88E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DHS030N88E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 320 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 174 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 105.7 nS
   Cossⓘ - Capacitancia de salida: 1112 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0038 Ohm
   Paquete / Cubierta: TO263
 

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DHS030N88E Datasheet (PDF)

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 dhs030n88 dhs030n88f dhs030n88i dhs030n88e.pdf pdf_icon

DHS030N88E

DHS030N88/DHS030N88F/DHS030N88I/DHS030N88E174A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 3.0mDS(on) (TYP)the RoHS standard.13 SI = 174AD2 Features Fast switching

 9.1. Size:775K  cn wxdh
 dhs031n07p.pdf pdf_icon

DHS030N88E

DHS031N07P100A 68V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 Dadvanced splite gate trench technology design, providedV =68VDSSexcellent Rdson and low gate charge. Which accords withGR =2.9mDS(on) (TYP)the RoHS standard.13 SI Silicon limit= 150AD2 FeaturesIPackage limit 100A= Fas

 9.2. Size:988K  cn wxdh
 dhs035n10 dhs035n10e.pdf pdf_icon

DHS030N88E

DHS035N10&DHS035N10E180A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFETV = 100VDSSutilizes advanced Split Gate Trench technology, which 2 Dprovides excellent Rdson and low Gate charge at the sameR = 3.2mTO-220DS(on) (TYP)time. Which accords with the RoHS standard.G1R = 3.0mTO-263DS(on) (TYP)3 S

 9.3. Size:975K  cn wxdh
 dhs035n88 dhs035n88e dhs035n88i.pdf pdf_icon

DHS030N88E

DHS035N88/DHS035N88E/DHS035N88I175A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionV = 80VDSSThese N-channel enhancement mode power mosfets used2 Dadvanced splite gate trench technology design, providedR =3.6m(TO-220&262)DS(on)(TYP)excellent Rdson and low gate charge. Which accords withGthe RoHS standard.R = 3.3m(TO-263)DS(on) (TYP)13 SI =175AD

MOSTRAR MÁS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: DHS030N88F | DSG041N08NA | DHS046N10B | OSG70R350FF | OSG70R600DF | BUZ906X4S | DSG053N08N3

 

 
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