DSE051N08N3 Todos los transistores

DSG053N08N3&DSE051N08N3 120A 80V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power mosfets used 2 D V = 80V DSS advanced splite gate trench technology design, provided R = 4.8m T0-220 DS(on) (TYP) excellent Rdson and low gate charge. Which accords with G the RoHS standard. R = 4.4m T0-263 DS(on) (TYP) 1 3 S I = 120A D 2 F

DSE054N10N3&DSG054N10N3 100V/4.6m /140A N-MOSFET Features Key Parameters VDS Low on resistance 100V RDS(on)typ. TO-263 Low reverse transfer capacitances 4.6m RDS(on)typ. TO-220 100% single pulse avalanche energy test 4.8m ID 100% VDS test 140A Pb-Free plating / Halogen-Free / RoHS compliant Vth 3V Ciss@10V 4912pF Qgd 16nC Applications M

DSG052N14N/DSE050N14N 180A 135V N-channel Enhancement Mode Power MOSFET 1 Description 2 D V =135V DSS This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which R =3.7m TO-263 DS(on) (TYP) G provides excellent Rdson and low Gate charge at the same 1 R =3.9m TO-220 DS(on) (TYP) time. Which accords with the RoHS standard. 3 S I

DSE058N15NA 150A 150V N-channel Enhancement Mode Power MOSFET 1 Description 2 D V =150V DSS These N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which G R = 5.0m DS(on) (TYP) provides excellent Rdson and low Gate charge at the same 1 time. Which accords with the RoHS standard. 3 S I = 150A D 2 Features Low on resistance Low gat