DHS055N85 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DHS055N85
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 157 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 110 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 59 nC
trⓘ - Tiempo de subida: 33 nS
Cossⓘ - Capacitancia de salida: 652 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
Paquete / Cubierta: TO220
DHS055N85 Datasheet (PDF)
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DHS055N85/DHS055N85E/DHS055N85D/DHS055N85B110A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSadvanced splite gate technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR =5.5mDS(on) (TYP)Gstandard.1I = 110AD3 S2 Features Fast switching Low
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DHS055N07B/DHS055N07D95A 68V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedadvanced splite gate trench technology design, provided V =68V2 D DSSexcellent Rdson and low gate charge. Which accords withR = 6.0mDS(on) (TYP)the RoHS standard.G1I = 95AD3 S2 Features Fast switching Low on resistance
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DHS055N07/DHS055N07E105A 68V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV =68VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withR = 6.0mTO-220DS(on) (TYP)the RoHS standard. G1R = 5.7mTO-263DS(on) (TYP)3 S2 FeaturesI = 105
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DHS051N10P108A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced Splite gate technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 5.0mDS(on) (TYP)G1standard.I = 108A3 S D2 Features Fast switching Low on resistance Low gate ch
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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