DHS055N85B Todos los transistores

 

DHS055N85B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DHS055N85B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 157 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 110 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 33 nS
   Cossⓘ - Capacitancia de salida: 652 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: TO247

 Búsqueda de reemplazo de MOSFET DHS055N85B

 

Principales características: DHS055N85B

 ..1. Size:1220K  cn wxdh
 dhs055n85 dhs055n85e dhs055n85d dhs055n85b.pdf pdf_icon

DHS055N85B

DHS055N85/DHS055N85E /DHS055N85D/DHS055N85B 110A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DS advanced splite gate technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R =5.5m DS(on) (TYP) G standard. 1 I = 110A D 3 S 2 Features Fast switching Low

 7.1. Size:875K  cn wxdh
 dhs055n07b dhs055n07d.pdf pdf_icon

DHS055N85B

DHS055N07B/DHS055N07D 95A 68V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided V =68V 2 D DSS excellent Rdson and low gate charge. Which accords with R = 6.0m DS(on) (TYP) the RoHS standard. G 1 I = 95A D 3 S 2 Features Fast switching Low on resistance

 7.2. Size:859K  cn wxdh
 dhs055n07 dhs055n07e.pdf pdf_icon

DHS055N85B

DHS055N07/DHS055N07E 105A 68V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V =68V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with R = 6.0m TO-220 DS(on) (TYP) the RoHS standard. G 1 R = 5.7m TO-263 DS(on) (TYP) 3 S 2 Features I = 105

 9.1. Size:769K  cn wxdh
 dhs051n10p.pdf pdf_icon

DHS055N85B

DHS051N10P 108A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 5.0m DS(on) (TYP) G 1 standard. I = 108A 3 S D 2 Features Fast switching Low on resistance Low gate ch

MOSTRAR MÁS

Otros transistores... DHS052N10F , DHS052N10I , DHS052N10P , DHS055N07 , DHS055N07B , DHS055N07D , DHS055N07E , DHS055N85 , IRFP064N , DHS055N85D , DHS055N85E , DHS065N10 , DHS065N10P , DHS065N85 , DHS065N85B , DHS065N85D , DHS065N85E .

 

 
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