DHSJ11N65 Todos los transistores

 

DHSJ11N65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DHSJ11N65
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 25 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
   Paquete / Cubierta: TO220
 

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DHSJ11N65 Datasheet (PDF)

 ..1. Size:1552K  cn wxdh
 dhsj11n65 dhfsj11n65 dhisj11n65 dhesj11n65 dhbsj11n65 dhdsj11n65.pdf pdf_icon

DHSJ11N65

DHSJ11N65/DHFSJ11N65/DHISJ11N65/DHESJ11N65/DHBSJ11N65/DHDSJ11N6511A 650V N-channel Super Junction Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is using advancedsuper junction technology and design to provide excellent 2 DV = 650VDSSRds(on) with low gate charge. Which accords with theR = 0.33DS(on) (TYP)RoHS standard. G1I = 11A3 S D2 Features

 9.1. Size:1649K  cn wxdh
 dhsj13n65 dhfsj13n65 dhisj13n65 dhesj13n65 dhbsj13n65 dhdsj13n65.pdf pdf_icon

DHSJ11N65

DHSJ13N65/DHFSJ13N65/DHISJ13N65DHESJ13N65/DHBSJ13N65/DHDSJ13N6513A 650V N-channel Super Junction Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is using advanced2 DV = 650VDSSsuper junction technology and design to provide excellentRdson with low gate charge. Which accords with theR = 0.28DS(on) (TYP)GRoHS standard.1I = 13A3 S D2 Features F

 9.2. Size:1360K  cn wxdh
 dhsj17n65 dhfsj17n65 dhisj17n65 dhesj17n65.pdf pdf_icon

DHSJ11N65

DHSJ17N65/DHFSJ17N65DHISJ17N65/DHESJ17N6517A 650V N-channel Super Junction Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is using advancedsuper junction technology and design to provide excellent 2 DV = 650VDSSRds(on) with low gate charge. Which accords with theR = 185mDS(on) (TYP)RoHS standard. G1I = 17A3 S D2 Features Fast switching Low

Otros transistores... DHS065N10P , DHS065N85 , DHS065N85B , DHS065N85D , DHS065N85E , DHS065N85F , DHS065N85I , DHS065N85P , IRFZ44 , DHSJ13N65 , DHSJ17N65 , DHSJ21N65W , DHSJ21N65Z , DHSJ25N65F , DSE012N04NA , DSE022N10N3 , F4N60 .

 

 
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