DHSJ25N65F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DHSJ25N65F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 180 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 25 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 31 nS
Cossⓘ - Capacitancia de salida: 60 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
Paquete / Cubierta: TO220C
Búsqueda de reemplazo de MOSFET DHSJ25N65F
Principales características: DHSJ25N65F
dhsj25n65f.pdf
DHSJ25N65F 25A 650V N-channel Super Junction Power MOSFET 1 Description This N-channel enhanced vdmosfets, is using advanced V = 650V DSS super junction technology and design to provide excellent Rdson with low gate charge. Which accords with the R = 110m DS(on) (TYP) RoHS standard. I = 25A D 2 Features Fast switching Low on resistance Low gate charge Low reve
dhsj21n65z.pdf
DHSJ21N65Z 16A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced vdmosfets, is using advanced V = 650V DSS super junction technology and design to provide excellent Rdson with low gate charge. Which accords with the RoHS R = 150m DS(on) (TYP) standard. I = 16 A D 2 Features Low on resistance Low gate charge Fast switching Low re
dhsj21n65w.pdf
DHSJ21N65W 21A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced VDMOSFETs, is using 2 D V = 650V DSS advanced super junction technology and design to provide excellent Rdson with low gate charge. Which accords with R = 150m DS(on) (TYP) G the RoHS standard. 1 I = 21A 3 S D 2 Features Fast switching Low on resistance
Otros transistores... DHS065N85F , DHS065N85I , DHS065N85P , DHSJ11N65 , DHSJ13N65 , DHSJ17N65 , DHSJ21N65W , DHSJ21N65Z , IRF640N , DSE012N04NA , DSE022N10N3 , F4N60 , F4N65 , F4N70 , F50N06 , F50N20 , F5N65C .
Liste
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