F4N60 Todos los transistores

F4N60 4A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 600V planar technology which reduce the conduction loss, improve switching I = 4.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V R DS(on) TYP) = 2

SVF4N60CAF/K/D/T/MN/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switc

April 2000 TM QFET QFET QFET QFET FQPF4N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.6A, 600V, RDS(on) = 2.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 8.0 pF) This advanced technology has been e

November 2013 FDPF4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.8 A, 2.5 Features Description RDS(on) = 1.9 (Typ.) @ VGS = 10 V, ID = 1.9 A UniFETTM II MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 8.3 nC) technology. This advanced MOSFET family has the smallest Low Crss (Typ. 3.7 pF) on

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

SSRF4N60 4A , 600 V , RDS(ON) 2.4 N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION ITO-220 The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without B N degrading performance over time. This

KF4N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF4N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and L C D _ A 6.60 + 0.20 switching mode power supp

KF4N60F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS switching mode power supplies. _ A 10.16 0.2 + _ B 15.8

AOWF4N60 600V,4A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOWF4N60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 4A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

AOT4N60/AOTF4N60/AOTF4N60L 600V,4A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT4N60 & AOTF4N60 & AOTF4N60L have been fabricated using an advanced high voltage MOSFET process ID (at VGS=10V) 4A that is designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

AOT4N60/AOTF4N60 600V,4A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT4N60 & AOTF4N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 4A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF4N60C N- MOS / N-CHANNEL POWER MOSFET SIF4N60C N- MOS / N-CHANN

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF4N60C N- MOS / N-CHANNEL POWER MOSFET SIF4N60C N- MOS / N-CHANN

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF4N60D N- MOS / N-CHANNEL POWER MOSFET SIF4N60D N- MOS / N-CHANN

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF4N60D N- MOS / N-CHANNEL POWER MOSFET SIF4N60D N- MOS / N-CHANN

SSF4N60G Main Product Characteristics VDSS 600V RDS(on) 1.85 (typ.) ID 4A TO-251 Marking and p in S che ma ti c di ag ra m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

SSF4N60D Main Product Characteristics VDSS 600V RDS(on) 2.0 (typ.) ID 4A TO-252 Marking and p in S che ma ti c di ag ra m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

SSF4N60F Main Product Characteristics VDSS 600V RDS(on) 1.9 (typ.) ID 4A Marking and p in TO-220F Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

SSF4N60 Features Vdss = 600V Extremely high dv/dt capability Id = 4A Low Gate Charge Qg results in Simple Drive Requirement Rdson = 2.3 (typ.) 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Description The SSF4N60 is a new generation of high voltage N Channel enhancement mode

BRF4N60(BRCS4N60F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for hi

SVF4N60CAF/K/D/T/MN/MJ 4A 600V N SVF4N60CAF/K/D/T/MN/MJ N MOS F-CellTM VDMOS

SVF4N60CAFJ 4A 600V N 2 SVF4N60CAFJ N MOS 1 F-CellTM VDMOS 3 1. 2.

SVF4N60RD(M) 4A 600V N SVF4N60RD(M) N MOS F-CellTM VDMOS AC-DC

MDF4N60D N-Channel MOSFET 600V, 4.0A, 2.2 General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChip s MOSFET Technology, which provides low on- ID = 4.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 2.2 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed

MDF4N60B N-Channel MOSFET 600V, 4.6A, 2.0 General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip s MOSFET Technology, which provides low on- I = 4.6A @ V = 10V D GS state resistance, high switching performance and excellent R 2.0 @ V = 10V DS(ON) GS quality. Applications These devices are suitable device

MDP4N60/MDF4N60 N-Channel MOSFET 600V, 4.6A, 2.0 General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip s MOSFET Technology, which provides low on- I = 4.6A @ V = 10V D GS state resistance, high switching performance and excellent R 2.0 @ V = 10V DS(ON) GS quality. Applications These devices are suitable

MSF4N60L 600V N-Channel MOSFET Description The MSF4N60L is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requir

MSF4N60 MSF4N60 600V N-Channel MOSFET General Description The MSF4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simpl

SFF4N60 SFF4N60 SFF4N60 SFF4N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4A,600V,R (Max 2.2 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC) ISO Maximum Junction Temperature Range(150 ) General Descri

WFF4N60 WFF4N60 WFF4N60 WFF4N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4A,600V,R (Max 2.5 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC) ISO Maximum Junction Temperature Range(150 ) General Descri

N N-CHANNEL MOSFET FHU4N60A/FHP4N60A/FHD4N60A/FHF4N60A MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 600V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 1.7 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested

SW4N60K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252 BVDSS 600V High ruggedness ID 4A Low RDS(ON) (Typ 1 )@VGS=10V RDS(ON) 1 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application Adapter,LED, Charger 3 3 3 1. Gate 2. Drain 3. Source 1 3

SW4N60D N-channel Enhancement mode TO-220F/TO-220FT/TO-251/S/M/TO-252 MOSFET Features BVDSS 600V TO-251S TO-251M TO-252 TO-220F TO-220FT TO-251 ID 4A High ruggedness Low RDS(ON) (Typ 1.9 ) RDS(ON) 1.9 @VGS=10V Low Gate Charge (Typ 18nC) 1 1 1 1 2 1 2 1 2 2 2 3 Improved dv/dt Capability 2 3 3 2 3 3 3 100% Avalanche Tested Application A

SW4N60DA N-channel Enhanced mode TO-252/TO-220F/TO-251S MOSFET Features TO-252 TO-220F TO-251S BVDSS 600V ID 4A High ruggedness Low RDS(ON) (Typ3.35 )@VGS=10V RDS(ON) 3.35 Low Gate Charge (Typ 9.6nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 1 2 2 2 3 3 Application DC-DC,LED 3 1 1. Gate 2. Drain 3. Sou

SW4N60D N-channel Enhancement mode TO-220F/TO-220FT/TO-251/S/M/TO-252 MOSFET Features BVDSS 600V TO-251S TO-251M TO-252 TO-220F TO-220FT TO-251 ID 4A High ruggedness Low RDS(ON) (Typ 1.9 ) RDS(ON) 1.9 @VGS=10V Low Gate Charge (Typ 18nC) 1 1 1 2 1 1 2 1 2 2 2 3 Improved dv/dt Capability 2 3 3 2 3 3 3 100% Avalanche T

TMP4N60/TMPF4N60 TMP4N60G/TMPF4N60G VDSS = 660 V @Tjmax Features ID = 4A Low gate charge RDS(on) = 2.55 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP4N60 / TMPF4N60 TO-220 / TO-220F TMP4N60 / TMPF4N60 RoHS TMP4N60G / TMPF4

TMP4N60AZ(G)/TMPF4N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.0A

TSP4N60M/TSF4N60M 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 4.0A,600V,Max.RDS(on)=2.5 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 16nC) minimize on-state resistance, provide superior switching High ruggedness performance, and

SMF4N60 600V N-Channnel MOSFET Features 4.0A, 600V, R =2.1 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction Absolute Maximum Ratings(Tc=25 C unless otherwise noted) Symbol Parameter Value

JMPF4N60BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 600V, 4A Load Switch RDS(ON)

LNC4N60 LND4N60 LNG4N60 LNH4N60 LNF4N60 Lonten N-channel 600V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 600V DSS advanced planar VDMOS technology. The I 4A D resulting device has low conduction resistance, R 2.4 DS(on),max superior switching performance and high avalance Q 12.8 nC g,typ energy. Features Low R DS(on) Low gate

PTP4 N60/PTF4 N60 600V/4 A N-Channel A dv anced Power MOSFET Features RDS(on) (Typical 2.6 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150 C) G D S G D S TO-220 TO-220F Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functio

INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOTF4N60 FEATURES With TO-220F packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAXIMUM