F640 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

640/F640/I640/E640/B640/D64018A 200V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the2 DV = 200Vself-aligned planar technology which reduce the DSSconduction loss, improve switching performance andR = 0.12DS(on) (TYP)Genhance the avalanche energy. Which accords with the1RoHS standard.I = 18A3 S D2 Featur

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6402/DThe RF LineNPN SiliconMRF6402RF Power TransistorThe MRF6402 is designed for 1.8 GHz Personal Communications Network(PCN) base stations applications. It incorporates high value emitter ballastresistors, gold metallizations and offers a high degree of reliability andruggedness. For ease of design, this transi

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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6402/DThe RF LineNPN SiliconMRF6402RF Power TransistorThe MRF6402 is designed for 1.8 GHz Personal Communications Network(PCN) base stations applications. It incorporates high value emitter ballastresistors, gold metallizations and offers a high degree of reliability andruggedness. For ease of design, this transi

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6404/DThe RF LineMRF6404NPN SiliconMRF6404KRF Power TransistorThe MRF6404 is designed for 26 volts microwave large signal, commonemitter, class AB linear amplifier applications operating in the range 1.8 to30 W, 1.88 GHz2.0 GHz.RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICON

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6408/DThe RF LineMRF6408NPN SiliconRF Power TransistorDesigned for PCN and PCS base station applications, the MRF6408incorporates high value emitter ballast resistors, gold metallizations and offers12 W, 2.0 GHza high degree of reliability and ruggedness.RF POWER TRANSISTOR To be used in class AB for PCN

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6408/DThe RF LineMRF6408NPN SiliconRF Power TransistorDesigned for PCN and PCS base station applications, the MRF6408incorporates high value emitter ballast resistors, gold metallizations and offers12 W, 2.0 GHza high degree of reliability and ruggedness.RF POWER TRANSISTOR To be used in class AB for PCN

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6401/DThe RF LineNPN SiliconMRF6401RF Power TransistorThe MRF6401 is designed for Class A common emitter, linear poweramplifiers in the 1.0 2.0 GHz frequency range. It has been specificallydesigned for use in Personal Communications Network (PCN) base station andINMARSAT Standard M applications. Specifie

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6408/DThe RF LineMRF6408NPN SiliconRF Power TransistorDesigned for PCN and PCS base station applications, the MRF6408incorporates high value emitter ballast resistors, gold metallizations and offers12 W, 2.0 GHza high degree of reliability and ruggedness.RF POWER TRANSISTOR To be used in class AB for PCN

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6404/DThe RF LineMRF6404NPN SiliconRF Power TransistorThe MRF6404 is designed for 26 volts microwave large signal, commonemitter, class AB linear amplifier applications operating in the range 1.8 to30 W, 1.88 GHz2.0 GHz.RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICONOutput Po

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6401PHT/DThe RF LineNPN SiliconMRF6401RF Power TransistorPHOTOMASTERCASE 305C02, STYLE 1SOE200PILLR4 R5 R6+VCCR7Q1R8R2 R3C9C10C4 C3 TL11TL10C5 C6 C7 C8TL6TL4C2TL5 TL7 TL9RFTL1 TL2OUTPUTRFTP1INPUTC1DUT TL8TL3 TL4C1 1.5 pF, ATC Chip Capacitor 100A Q1 Tran

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6404/DThe RF LineMRF6404NPN SiliconRF Power TransistorThe MRF6404 is designed for 26 volts microwave large signal, commonemitter, class AB linear amplifier applications operating in the range 1.8 to30 W, 1.88 GHz2.0 GHz.RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICONOutput Po

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6404/DThe RF LineMRF6404NPN SiliconMRF6404KRF Power TransistorThe MRF6404 is designed for 26 volts microwave large signal, commonemitter, class AB linear amplifier applications operating in the range 1.8 to30 W, 1.88 GHz2.0 GHz.RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICON

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6409/DThe RF LineNPN SiliconMRF6409RF Power TransistorThe MRF6409 is designed for GSM base stations applications. It incorpo-rates high value emitter ballast resistors, gold metallizations and offers a highdegree of reliability and ruggedness. To be used in Class AB Specified 26 Volts, 960 MHz Characteris

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6402/DThe RF LineNPN SiliconMRF6402RF Power TransistorThe MRF6402 is designed for 1.8 GHz Personal Communications Network(PCN) base stations applications. It incorporates high value emitter ballastresistors, gold metallizations and offers a high degree of reliability andruggedness. For ease of design, this transi

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6409/DThe RF LineNPN SiliconMRF6409RF Power TransistorThe MRF6409 is designed for GSM base stations applications. It incorpo-rates high value emitter ballast resistors, gold metallizations and offers a highdegree of reliability and ruggedness. To be used in Class AB Specified 26 Volts, 960 MHz Characteris

PD - 94006IRF640NIRF640NSIRF640NL Advanced Process TechnologyHEXFET Power MOSFET Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 200V Fast Switching Fully Avalanche RatedRDS(on) = 0.15 Ease of ParallelingG Simple Drive RequirementsDescriptionID = 18AFifth Generation HEXFET Power MOSFETs from SInternational Rectifier utilize advanced processi

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PD - 95046AIRF640NPbFIRF640NSPbFl Advanced Process Technology IRF640NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive Requirements RDS(on) = 0.15Gl Lead-FreeDescriptionID = 18AFifth Generation HEXFET Power MOSFETs fromSInternational Rectif

PD - 95046AIRF640NPbFIRF640NSPbFl Advanced Process Technology IRF640NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive Requirements RDS(on) = 0.15Gl Lead-FreeDescriptionID = 18AFifth Generation HEXFET Power MOSFETs fromSInternational Rectif

PD -90902BIRF640S/LHEXFET Power MOSFET Surface Mount (IRF640S)D Low-profile through-hole (IRF640L)VDSS = 200V Available in Tape & Reel (IRF640S) Dynamic dv/dt RatingRDS(on) = 0.18 150C Operating TemperatureG Fast SwitchingID = 18A Fully Avalanche RatedSDescriptionThird Generation HEXFETs from International Rectifier providethe designer with the best co

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Philips Semiconductors Product specification N-channel TrenchMOS transistor IRF640, IRF640S FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 16 AgRDS(ON) 180 msGENERAL DESCRIPTIONN-channel, enhancement mode field-effect power transistor using Trench technolog

IRF640IRF640FPN-channel 200V - 0.15 - 18A TO-220/TO-220FPMesh overlay Power MOSFETGeneral featuresType VDSS RDS(on) IDIRF640 200V

IRF640IRF640FP N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FPMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDIRF640 200 V

IRF640IRF640FPN-channel 200V - 0.15 - 18A TO-220/TO-220FPMesh overlay Power MOSFETGeneral featuresType VDSS RDS(on) IDIRF640 200V

IRF640IRF640FP N - CHANNEL 200V - 0.150 - 18A - TO-220/FPMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDIRF640 200 V

November 2001IRF640B/IRFS640B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored to

IRF640, RF1S640, RF1S640SMData Sheet January 200218A, 200V, 0.180 Ohm, N-Channel Power FeaturesMOSFETs 18A, 200VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.180power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakd

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input CapacitanceID = 18 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val

IRF640S, IRF640L, SiHF640S, SiHF640LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 10 V 0.18 Low-Profile Through-HoleQg (Max.) (nC) 70 Available in Tape and ReelQgs (nC) 13 Dynamic dV/dt Rating 150 C Operating TemperatureQgd (nC) 39 Fast Swi

IRF640, SiHF640Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.18RoHS* Fast SwitchingQg (Max.) (nC) 70 COMPLIANT Ease of ParallelingQgs (nC) 13Qgd (nC) 39 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDESC

IRF640S, SiHF640S, SiHF640Lwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface mountVDS (V) 200 Low-profile through-holeRDS(on) ()VGS = 10 V 0.18 Available in tape and reelAvailableQg max. (nC) 70 Dynamic dV/dt ratingQgs (nC) 13 150 C operating temperature AvailableQgd (nC) 39 Fast switchingConfiguration Single

IRF640, SiHF640Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.18RoHS* Fast SwitchingQg (Max.) (nC) 70 COMPLIANT Ease of ParallelingQgs (nC) 13Qgd (nC) 39 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDESC

UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640 suitable for resonant an

UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640 suitable for resonant an

UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640 suitable for resonant an

IRF640, IRF641, IRF642,S E M I C O N D U C T O RIRF643, RF1S640, RF1S640SM16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm,N-Channel Power MOSFETsJanuary 1998Features Description 16A and 18A, 150V and 200V These are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power rDS(ON) = 0.18 and 0.22MOSFETs designed, tested, and guar

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS IRFF640 N-Channel Power MOSFET TO-220F DESCRIPTION This advanced high voltage MOSFET is designed to stand high 1. GATE energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. 2. DRAIN Designed for high volta

CEPF640/CEBF640 CEFF640N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEPF640 200V 0.15 19A 10VCEBF640 200V 0.15 19A 10VCEFF640 200V 0.15 19A d 10VSuper high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead free product is acquired.TO-220 & TO-263 & TO-220F full-pak for through hole.

CEDF640/CEUF640N-Channel Enhancement Mode Field Effect TransistorFEATURES200V, 15A, RDS(ON) = 0.15 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless oth

IRF640N-Channel EnhancementDRAIN CURRENTMode POWER MOSFET 18 AMPERES3 DRAINDRAIN SOURCE VOLTAGEP b Lead(Pb)-Free200 VOLTAGE1 GATEFeatures:2*Super High Dense Cell Design For Low RDS(ON)SOURCERDS(ON)

SSF6401DDESCRIPTION The SSF6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as -0.4V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -20V,ID = -4.3A RDS(ON)

IRF640 Rev.G Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency swi

RoHS IRF640 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(18A, 200Volts)DESCRIPTION The Nell IRF640 are N-channel enhancement mode silicon gate power field effect transistors.DD They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and relia

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFF640 APPLICATIONSL TO-220F High Voltage High-Speed Switching. ABSOLUTE MAXIMUM RATINGSTa=25 1TstgStorage Temperature-55~150 1G Tj Operating Junction Temperature 150 2D PD Allowable Power Dissipatio

WFF640WFF640WFF640WFF640Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 18A,200V.RDS(on)(Max 0.1 8)@VGS=10V Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage ( VISO = 4000V AC ) Maximum Junction Temperature Range(150)General Description

IRF640N-Channel MOSFET TransistorFEATURESStatic drain-source on-resistance:TO-220RDS(on) 150mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Efficient and reliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)

HF640,HP640200V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingHF640 TO-220F HF640HP640 TO-220 HP640Absolute Maximum Ratings TC = 25C, unles

IRF640NN-Ch 200V Fast Switching MOSFETs Product Summary Super Low Gate Charge Green Device Available Excellent Cdv/dt effect decline BVDSS RDSON ID Advanced high cell density Trench 200V 170m 18A technology Description TO220 Pin Configuration The IRF640N is the highest performance trenchN-ch MOSFETs with extreme high cell density,which provide excel

IRF640Pwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.110 at VGS = 10 V2 0 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTO-220ABAPPLICATIONS Primary Side SwitchDDRAIN connected to TAB GG D S Top ViewSN-Chan

isc N-Channel MOSFET Transistor IRF640NIIRF640NFEATURESStatic drain-source on-resistance:RDS(on) 150mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Efficient and reliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T

isc N-Channel MOSFET Transistor YTF640FEATURESDrain Current : I = 18A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R =0.18(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABSO

Isc N-Channel MOSFET Transistor IRF640NSFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF640 DESCRIPTION Drain Current ID= 18A@ TC=25 Drain Source Voltage- : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.18(Max) Fast Switching Speed Low Drive Requirement APPLICATIONS Designed for low voltage, high speed power switching applications suc

Isc N-Channel MOSFET Transistor IRF640NLFEATURESWith TO-262 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR