F80N06 Todos los transistores

80N06/F80N06/I80N06/ E80N06/B80N06/D80N06 80A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power MOSFETS 2 D VDS = 60V Used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with R = 7m DS(on) (Type) G the RoHS standard. 1 ID = 80A 3 S 2 Features Fast Switching High avalanche C

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF80N060 N- MOS / N-CHANNEL POWER MOSFET SIF80N060

Jan 2016 HRLF80N06K 60V N-Channel Trench MOSFET 8DFN 5x6 FEATURES BVDSS = 60 V ID = 70 A 1 Unrivalled Gate Charge 100 nC (Typ.) Lower RDS(ON) 6.3 (Typ.) @VGS=10V Lower RDS(ON) 7.5 (Typ.) @VGS=4.5V 100% Avalanche Tested Absolute Maximum Ratings TJ=25 unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage

WSF80N06H N-Ch MOSFET General Description Product Summery WSF80N06H use advanced VD MOST technology to provide low RDS(ON), low BVDSS RDSON ID gate charge, fast switching This device is 60V 8.0m 70A specially designed to get better ruggedness and suitable to use in Low RDS(on) & FOM Extremely low switching loss Applications Excellent stability and uniformity or Invertors