F8N50 Datasheet. Equivalente

 ..1. Size:981K  cn wxdh
 f8n50.pdf

F8N50 8A 500V N-channel Enhancement Mode Power MOSFET 1 Description These, the silicon N-channel enhanced VDMOSFETs, is 2 D V = 500V DSS obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and R = 0.7 DS(on) (TYP) G enhance the avalanche energy. Which accords with the 1 RoHS standard. I = 8A 3 S D 2 Feature

 0.1. Size:719K  fairchild semi
 fdp8n50nz fdpf8n50nzt.pdf

October 2009 UniFETTM FDP8N50NZ / FDPF8N50NZT N-Channel MOSFET 500V, 8A, 0.85 Features Description RDS(on) = 0.77 ( Typ.) @ VGS = 10V, ID = 4A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC) technology. Low Crss ( Typ. 5pF) This advance technology has been

 0.2. Size:245K  fairchild semi
 fdp8n50nz fdpf8n50nz fdpf8n50nzt.pdf

March 2010 UniFETTM FDP8N50NZ / FDPF8N50NZ tm N-Channel MOSFET 500V, 8A, 0.85 Features Description RDS(on) = 0.77 ( Typ.) @ VGS = 10V, ID = 4A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC) technology. Low Crss ( Typ. 5pF) This advance technology has been es

 0.3. Size:677K  fairchild semi
 fdp8n50nzu fdpf8n50nzu.pdf

February 2010 UniFET-IITM FDP8N50NZU / FDPF8N50NZU tm N-Channel MOSFET 500V, 6.5A, 1.2 Features Description RDS(on) = 1.0 ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC) technology. Low Crss ( Typ. 5pF) This advance t echnology

 0.4. Size:236K  fairchild semi
 fdp8n50nzf fdpf8n50nzf.pdf

February 2010 UniFET-IITM FDP8N50NZF / FDPF8N50NZF tm N-Channel MOSFET 500V, 7A, 1 Features Description RDS(on) = 0.85 ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC) technology. Low Crss ( Typ. 5pF) This advance technology has

 0.5. Size:168K  vishay
 sihf8n50d.pdf

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 sihf8n50l.pdf

New Product SiHF8N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 RDS(on) ( )VGS = 10 V 1 100 % Avalanche Tested Qg (Max.) (nC) 34 Gate Charge Improved Qgs (nC) 7.8 Trr/Qrr Improved Qgd (nC) 10.4 Configuration Single Compliant to RoHS Directive 2002/95/EC D TO-220 FULLPAK G S S D G N-Chan

 0.7. Size:894K  onsemi
 fdpf8n50nzf.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.8. Size:888K  onsemi
 fdp8n50nz fdpf8n50nz.pdf

October 2013 FDP8N50NZ / FDPF8N50NZ N-Channel UniFETTM II MOSFET 500 V, 8 A, 850 m Features Description RDS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 4 A UniFETTM II MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 14 nC) technology. This advanced MOSFET family has the smallest Low Crss (

 0.9. Size:159K  aosemi
 aotf8n50.pdf

AOT8N50/AOTF8N50 500V, 8A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT8N50 & AOTF8N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 8A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 0.10. Size:276K  aosemi
 aot8n50 aotf8n50.pdf

AOT8N50/AOTF8N50 500V, 9A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT8N50 & AOTF8N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 9A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 0.11. Size:380K  aosemi
 aowf8n50.pdf

AOWF8N50 500V, 8A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOWF8N50 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 8A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)

 0.12. Size:332K  sisemi
 sif8n50c.pdf

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF8N50C N- MOS / N-CHANNEL POWER MOSFET SIF8N50C N- MOS / N-CHANN

 0.13. Size:708K  bruckewell
 msf8n50.pdf

MSF8N50 500V N-Channel MOSFET Description The MSF8N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features BVDSS=550V typically @ Tj=150 C Low On

 0.14. Size:605K  trinnotech
 tmp8n50z tmpf8n50z.pdf

TMP8N50Z(G)/TMPF8N50Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 8A

 0.15. Size:252K  inchange semiconductor
 aotf8n50.pdf

isc N-Channel MOSFET Transistor AOTF8N50 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo