F8N60 Todos los transistores

 ..1. Size:1362K  cn wxdh
 f8n60.pdf

F8N60 8A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 600V planar technology which reduce the conduction loss, improve switching I = 8.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V R DS(on) TYP) =0.

 0.1. Size:710K  st
 stf8n60dm2.pdf

STF8N60DM2 N-channel 600 V, 550 m typ., 8 A MDmesh DM2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STF8N60DM2 600 V 600 m 8 A 25 W Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness

 0.2. Size:927K  fairchild semi
 fqp8n60c fqpf8n60c.pdf

QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to

 0.3. Size:750K  fairchild semi
 fqpf8n60cf.pdf

February 2006 TM FRFET FQPF8N60CF 600V N-Channel MOSFET Features Description 6.26A, 600V, RDS(on) = 1.5 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 28 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored t

 0.4. Size:925K  fairchild semi
 fqpf8n60ct fqpf8n60cydtu.pdf

QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to

 0.5. Size:534K  fairchild semi
 fdp8n60zu fdpf8n60zut.pdf

April 2009 UniFETTM FDP8N60ZU / FDPF8N60ZUT N-Channel MOSFET, FRFET 600V, 6.5A, 1.35 Features Description RDS(on) = 1.15m ( Typ.) @ VGS = 10V, ID = 3.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 20nC) stripe, DMOS technology. Low Crss ( Typ. 10pF) This advanced techno

 0.6. Size:698K  onsemi
 fdpf8n60zut.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.7. Size:928K  onsemi
 fqp8n60c fqpf8n60c.pdf

QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to

 0.8. Size:1285K  onsemi
 fqpf8n60cf.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.9. Size:579K  kec
 kf8n60p-f.pdf

KF8N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF8N60P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G correction and switching mode power suppli

 0.10. Size:441K  aosemi
 aotf8n60.pdf

AOT8N60/AOTF8N60 600V,8A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 8A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 0.11. Size:434K  silikron
 ssf8n60.pdf

SSF8N60 Features VDSS = 600V Extremely high dv/dt capability ID = 8A Low Gate Charge Qg results in Simple Drive Requirement Rdson = 0.85 (typ.) 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Description The SSF8N60 is a new generation of high voltage N Channel enhancement mod

 0.12. Size:781K  blue-rocket-elect
 brf8n60.pdf

BRF8N60(BRCS8N60FL) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features , , Low gate charge, Low Crss , Fast switching. / Applications DC/DC These devices are well suited for h

 0.13. Size:433K  silan
 svf8n60t svf8n60f.pdf

SVF8N60T/F_Datasheet 8A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching

 0.14. Size:336K  silan
 svf8n60f.pdf

SVF8N60F 8A 600V N 2 SVF8N60F N MOS F-CellTM VDMOS 1 3

 0.15. Size:835K  magnachip
 mdf8n60bth.pdf

MDF8N60B N-Channel MOSFET 600V, 8A, 1.05 General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChip s MOSFET Technology, which provides low on- ID = 8.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 1.05 @ VGS = 10V quality. Applications These devices are suitable device for SMP

 0.16. Size:339K  bruckewell
 msf8n60.pdf

MSF8N60 N-Channel Enhancement Mode Power MOSFET Description The MSF8N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Sim

 0.17. Size:696K  winsemi
 wff8n60.pdf

WFF8N60 WFF8N60 WFF8N60 WFF8N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 7.5A,600V,R (Max1.2 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage (V =4000V AC) ISO Maximum Junction Temperature Range(150 ) General Desc

 0.18. Size:709K  winsemi
 wff8n60b.pdf

WFF8N60B WFF8N60B WFF8N60B WFF8N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 7.5A,600V,R (Max1.2 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage (V =4000V AC) ISO Maximum Junction Temperature Range(150 ) General

 0.19. Size:811K  feihonltd
 fhp8n60a fhf8n60a.pdf

N N-CHANNEL MOSFET FHP8N60A /FHF8N60A MAIN CHARACTERISTICS FEATURES ID 8A Low gate charge VDSS 600V Crss ( 15pF) Low Crss (typical 15pF ) Rdson-typ @Vgs=10V 0.9 Fast switching Qg-typ 29nC 100% 100% avalanche tested dv/dt Improved dv/dt

 0.20. Size:995K  feihonltd
 fhp8n60c fhf8n60c.pdf

N N-CHANNEL MOSFET FHP8N60C /FHF8N60C MAIN CHARACTERISTICS FEATURES ID 8A Low gate charge VDSS 600V Crss ( 12pF) Low Crss (typical 12pF ) Rdson-typ @Vgs=10V 1.1 Fast switching Qg-typ 29nC 100% 100% avalanche tested dv/dt Improv

 0.21. Size:303K  maple semi
 slp8n60c slf8n60c.pdf

SLP8N60C / SLF8N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7.5A, 600V, RDS(on) typ. = 1.0 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 29nC) This advanced technology has been especially tailored to - High ruggedness minimize on-state resistance, provide superior switching - Fast switching

 0.22. Size:804K  samwin
 swu8n60d swf8n60d.pdf

SW8N60D N-channel Enhanced mode TO-262/TO-220F MOSFET Features TO-262 BVDSS 600V TO-220F ID 8A High ruggedness Low RDS(ON) (Typ 0.92 )@VGS=10V RDS(ON) 0.92 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 Application LED,Charger,PC Power 2 3 3 1. Gate 2. Drain 3. Source 1 General Descr

 0.23. Size:625K  trinnotech
 tmp8n60az tmpf8n60az.pdf

TMP8N60AZ(G)/TMPF8N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 7.5A

 0.24. Size:1268K  truesemi
 tsp8n60m tsf8n60m.pdf

TSP8N60M/TSF8N60M 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 7.5A,600V,Max.RDS(on)=1.20 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 29nC) minimize on-state resistance, provide superior switching High ruggedness performance, an

 0.25. Size:1959K  anbon
 au8n60s ad8n60s at8n60s af8n60s ak8n60s ag8n60s.pdf

 0.26. Size:867K  huake
 smf8n60.pdf

SMF8N60 600V N-Channnel MOSFET Features 8.0A, 600V, R =1.0 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction Absolute Maximum Ratings(Tc=25 C unless otherwise noted) Symbol Parameter Value

 0.27. Size:999K  jiejie micro
 jmpf8n60bj.pdf

JMPF8N60BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 600V, 8A Load Switch RDS(ON)

 0.28. Size:1247K  cn sps
 smirf8n60.pdf

SMIRF8N60 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 8A SMIRF8N60 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 600V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson(max) 1.2 (VGS=10V, ID=4A) on-state resistance, provide superior switchi

 0.29. Size:252K  inchange semiconductor
 aotf8n60.pdf

isc N-Channel MOSFET Transistor AOTF8N60 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos