F8N65 Todos los transistores

 ..1. Size:1383K  cn wxdh
 f8n65.pdf

F8N65 8A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 650V planar technology which reduce the conduction loss, improve switching I = 8.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V R DS(on) TYP) =1.

 0.1. Size:1239K  st
 stb8n65m5 std8n65m5 stf8n65m5 sti8n65m5 stp8n65m5 stu8n65m5.pdf

 0.2. Size:1298K  st
 stb8n65m5 std8n65m5 stf8n65m5 stu8n65m5 stp8n65m5 sti8n65m5.pdf

 0.3. Size:506K  aosemi
 aot8n65 aotf8n65.pdf

AOT8N65/AOTF8N65 650V, 8A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOT8N65 & AOTF8N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 8A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 0.4. Size:154K  aosemi
 aotf8n65.pdf

AOT8N65/AOTF8N65 650V, 8A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOT8N65 & AOTF8N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 8A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 0.5. Size:434K  silikron
 ssf8n65.pdf

SSF8N65 Features VDSS = 650V Extremely high dv/dt capability ID = 8A Low Gate Charge Qg results in Simple Drive Requirement Rdson = 0.95 (typ.) 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Description The SSF8N65 is a new generation of high voltage N Channel enhancement mod

 0.6. Size:979K  blue-rocket-elect
 brf8n65.pdf

BRF8N65(BRCS8N65FL) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for hi

 0.7. Size:384K  silan
 svf8n65rmj svf8n65rdtr.pdf

SVF8N65RD(MJ) 8A 650V N SVF8N65RD(MJ) N MOS 2 F-CellTM VDMOS 1

 0.8. Size:429K  silan
 svf8n65t svf8n65f.pdf

SVF8N65T/F 8A 650V N SVF8N65T/F N MOS F-CellTM VDMOS AC-D

 0.9. Size:215K  winsemi
 wff8n65l.pdf

WFF8N65L Product Description Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features D 8.0A,650V,R (Max1.4 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 14.5nC) Fast Switching Capability G 100%Avalanche Tested Maximum Junction Temperature Range(150 ) S General Description This Power MOSFET is produce

 0.10. Size:695K  winsemi
 wff8n65b.pdf

WFF8N65B WFF8N65B WFF8N65B WFF8N65B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 7.5A,650V,R (Max1.3 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 25nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage (V =4000V AC) ISO Maximum Junction Temperature Range(150 ) General

 0.11. Size:970K  feihonltd
 fhp8n65a fhf8n65a.pdf

N N-CHANNEL MOSFET FHP8N65A /FHF8N65A MAIN CHARACTERISTICS FEATURES ID 8A Low gate charge VDSS 650V Crss ( 5.5pF) Low Crss (typical 5.5pF ) Rdson-typ @Vgs=10V 1.0 Fast switching Qg-typ 24nC 100% 100% avalanche tested dv/dt Impr

 0.12. Size:2092K  maple semi
 slf8n65sv.pdf

 0.13. Size:361K  maple semi
 slp8n65c slf8n65c.pdf

SLP8N65C/SLF8N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7.5A, 650V, RDS(on) typ. = 1.2 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 29nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching p

 0.14. Size:1171K  samwin
 swp8n65d swi8n65d swd8n65d swf8n65d swnx8n65d.pdf

SW8N65D N-channel Enhanced mode TO-220/TO-251/TO-252/TO-220F/TO-251NX MOSFET BVDSS 650V Features TO-220 TO-251 TO-252 TO-220F TO-251NX ID 8A High ruggedness RDS(ON) 1.1 Low RDS(ON) (Typ 1.1 )@VGS=10V Low Gate Charge (Typ 32nC) 2 Improved dv/dt Capability 1 1 1 1 100% Avalanche Tested 1 2 2 2 2 2 3 3 3 3 Application Charg

 0.15. Size:1132K  samwin
 sw8n65db swi8n65db swd8n65db swf8n65db swj8n65db.pdf

SW8N65DB N-channel Enhanced mode TO-251/TO-252 /TO-220F/TO-262N MOSFET Features BVDSS 650V TO-251 TO-252 TO-220F TO-262N ID 8A High ruggedness Low RDS(ON) (Typ 1.0 )@VGS=10V RDS(ON) 1.0 Low Gate Charge (Typ 34nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 1 1 1 2 2 2 2 Application LED, Charge, PC Power 3 3 3 3 1

 0.16. Size:1066K  samwin
 swi8n65db swd8n65db swf8n65db swj8n65db.pdf

SW8N65DB N-channel Enhanced mode TO-251/TO-252 /TO-220F/TO-262N MOSFET Features BVDSS 650V TO-251 TO-252 TO-220F TO-262N ID 8A High ruggedness Low RDS(ON) (Typ 1.0 )@VGS=10V RDS(ON) 1.0 Low Gate Charge (Typ 34nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 1 1 1 2 2 2 2 Application LED, Charger, PC Power 3 3 3 3 1 1. Gate 2. Drain

 0.17. Size:1169K  truesemi
 tsp8n65m tsf8n65m.pdf

TSP8N65M/TSF8N65M 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 7.5A,650V,Max.RDS(on)=1.50 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 29nC) minimize on-state resistance, provide superior switching High ruggedness performance, an

 0.18. Size:867K  huake
 smf8n65.pdf

SMF8N65 650V N-Channnel MOSFET Features 8.0A, 650V, R =1.1 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction Absolute Maximum Ratings(Tc=25 C unless otherwise noted) Symbol Parameter Value

 0.19. Size:6056K  cn puolop
 ptf8n65.pdf

PTF8 N65 65 0V/8 A N-Channel A dv anced Power MOSFET Features RDS(on) (Typical 0.9 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150 C) G D S TO-220F Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t

 0.20. Size:1406K  cn sps
 smirf8n65.pdf

SMIRF8N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 8A SMIRF8N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson(max) 1.2 (VGS=10V, ID=4A) on-state resistance, provide superior switchi

 0.21. Size:715K  cn minos
 mpf8n65.pdf

Silicon N-Channel MOSFET Features V =650V, I =8A DS D R = 1.4 (Max.) @ V = 10V, I = 4A DS(ON) GS D Fast switching 100% avalanche tested Improved dv/dt capability RoHS and Halogen-Free Compliant Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) TO-220 Absolute Maximum Ratings T =25

 0.22. Size:201K  inchange semiconductor
 stf8n65m5.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STF8N65M5 FEATURES Excellent switching performance Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS V Gate-

 0.23. Size:252K  inchange semiconductor
 aotf8n65.pdf

isc N-Channel MOSFET Transistor AOTF8N65 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 1.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo