I630 Todos los transistores

630/F630/I630/ E630/B630/D630 9A 200V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the 2 D V = 200V self-aligned planar technology which reduce the conduction DSS loss, improve switching performance and enhance the R = 0.23 DS(on) (TYP) G avalanche energy. Which accords with the RoHS standard. 1 I = 9A 3 S D 2 Feature

PD - 94846 IRFI630GPbF Lead-Free 11/14/03 Document Number 91148 www.vishay.com 1 IRFI630GPbF Document Number 91148 www.vishay.com 2 IRFI630GPbF Document Number 91148 www.vishay.com 3 IRFI630GPbF Document Number 91148 www.vishay.com 4 IRFI630GPbF Document Number 91148 www.vishay.com 5 IRFI630GPbF Document Number 91148 www.vishay.com 6 IRFI630GPbF TO-220 Full

PD- 95653 IRLI630GPbF Lead-Free www.irf.com 1 7/26/04 IRLI630GPbF 2 www.irf.com IRLI630GPbF www.irf.com 3 IRLI630GPbF 4 www.irf.com IRLI630GPbF www.irf.com 5 IRLI630GPbF 6 www.irf.com IRLI630GPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - +

PD - 9.1236 IRLI630G HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS = 200V Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive RDS(on) = 0.40 RDS(ON) Specified at VGS = 4V & 5V Fast Switching Ease of paralleling ID = 6.2A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast

IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 22 nC) planar, DMOS technology. Low Crss ( typical 22 pF) This advanced technology has been especially tailored to Fast switc

IRLW/I630A FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 150 C Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.335 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3

IRFI630G, SiHFI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.40 f = 60 Hz) RoHS* Qg (Max.) (nC) 43 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 7.0 Dynamic dV/dt Rating Qgd (nC) 23 Low Thermal Resistance Configuration S

IRLI630G, SiHLI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 5.0 V 0.40 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 40 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 5.5 Logic-Level Gate Drive Qgd (nC) 24 RDS(on) Specified at VGS = 4 V and 5V

IRFI630G, SiHFI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.40 f = 60 Hz) RoHS* Qg (Max.) (nC) 43 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 7.0 Dynamic dV/dt Rating Qgd (nC) 23 Low Thermal Resistance Configuration S

VTI630F(BRCS630F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features RDS(on) 0.3 , Typical RDS(on)=0.3 ,low intrinsic capacitance Ciss, fast switching. / Applications , ,DC-DC

BRI630(BRCS630I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high effi

VTI630(BRCS630R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features RDS(on) 0.3 , Typical RDS(on)=0.3 ,low intrinsic capacitance Ciss, fast switching. / Applications , ,DC-DC