I640 Todos los transistores

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 640 f640 i640 e640 b640 d640.pdf

640/F640/I640/E640/B640/D640 18A 200V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the 2 D V = 200V self-aligned planar technology which reduce the DSS conduction loss, improve switching performance and R = 0.12 DS(on) (TYP) G enhance the avalanche energy. Which accords with the 1 RoHS standard. I = 18A 3 S D 2 Featur

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 irli640a irlw640a.pdf

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 irfi640a irfw640a.pdf

 0.3. Size:1146K  international rectifier
 irfi640gpbf.pdf

PD- 95420 IRFI640GPbF Lead-Free 06/16/04 Document Number 91150 www.vishay.com 1 IRFI640GPbF Document Number 91150 www.vishay.com 2 IRFI640GPbF Document Number 91150 www.vishay.com 3 IRFI640GPbF Document Number 91150 www.vishay.com 4 IRFI640GPbF Document Number 91150 www.vishay.com 5 IRFI640GPbF Document Number 91150 www.vishay.com 6 IRFI640GPbF Document Num

 0.4. Size:172K  international rectifier
 irfi640g.pdf

 0.5. Size:153K  international rectifier
 irli640g.pdf

PD - 9.1237 IRLI640G HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS = 200V Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive RDS(on) = 0.18 RDS(ON) Specified at VGS = 4V & 5V Fast Switching Ease of paralleling ID = 9.9A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast

 0.6. Size:1231K  international rectifier
 irli640gpbf.pdf

PD- 95654 IRLI640GPbF Lead-Free 7/26/04 Document Number 91314 www.vishay.com 1 IRLI640GPbF Document Number 91314 www.vishay.com 2 IRLI640GPbF Document Number 91314 www.vishay.com 3 IRLI640GPbF Document Number 91314 www.vishay.com 4 IRLI640GPbF Document Number 91314 www.vishay.com 5 IRLI640GPbF Document Number 91314 www.vishay.com 6 IRLI640GPbF Peak Diode Re

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 irli640g sihli640g.pdf

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 irli640gpbf sihli640g.pdf

 0.9. Size:1801K  vishay
 sihfi640g.pdf

IRFI640G, SiHFI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.18 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 70 COMPLIANT Dynamic dV/dt Rating Qgs (nC) 13 Low Thermal Resistance Qgd (nC) 39 Lead (Pb)-fr

 0.10. Size:1799K  vishay
 irfi640g sihfi640g.pdf

IRFI640G, SiHFI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.18 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 70 COMPLIANT Dynamic dV/dt Rating Qgs (nC) 13 Low Thermal Resistance Qgd (nC) 39 Lead (Pb)-fr

 0.11. Size:198K  vishay
 si6404dq.pdf

Si6404DQ Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFETS 2.5 V Rated 0.009 at VGS = 10 V 11 30 V VDS RoHS 0.010 at VGS = 4.5 V 30 10 COMPLIANT 0.014 at VGS = 2.5 V 8.8 APPLICATIONS Battery Switch Charger Switch D TSSOP-8 * Source Pins 2, 3, 6 and 7 must be

 0.12. Size:1269K  blue-rocket-elect
 vti640.pdf

VTI640(BRCS640R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features RDS(on) 0.3 , Typical RDS(on)=0.3 ,low intrinsic capacitance Ciss, fast switching. / Applications , ,DC-DC

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 vti640f.pdf

 0.14. Size:191K  semihow
 hfi640 hfw640.pdf

Mar 2008 BVDSS = 200 V RDS(on) typ HFW640 / HFI640 ID = 18 A 200V N-Channel MOSFET D2-PAK I2-PAK 2 FEATURES 1 3 1 2 3 Originative New Design HFW640 HFI640 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 37 nC (Typ.)