I640 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

640/F640/I640/E640/B640/D64018A 200V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the2 DV = 200Vself-aligned planar technology which reduce the DSSconduction loss, improve switching performance andR = 0.12DS(on) (TYP)Genhance the avalanche energy. Which accords with the1RoHS standard.I = 18A3 S D2 Featur

PD- 95420IRFI640GPbF Lead-Free06/16/04Document Number: 91150 www.vishay.com1IRFI640GPbFDocument Number: 91150 www.vishay.com2IRFI640GPbFDocument Number: 91150 www.vishay.com3IRFI640GPbFDocument Number: 91150 www.vishay.com4IRFI640GPbFDocument Number: 91150 www.vishay.com5IRFI640GPbFDocument Number: 91150 www.vishay.com6IRFI640GPbFDocument Num

PD - 9.1237IRLI640GHEXFET Power MOSFETIsolated PackageHigh Voltage Isolation = 2.5KVRMS VDSS = 200VSink to Lead Creepage Dist. 4.8mmLogic-Level Gate DriveRDS(on) = 0.18RDS(ON) Specified at VGS = 4V & 5VFast SwitchingEase of parallelingID = 9.9ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast

PD- 95654IRLI640GPbF Lead-Free7/26/04Document Number: 91314 www.vishay.com1IRLI640GPbFDocument Number: 91314 www.vishay.com2IRLI640GPbFDocument Number: 91314 www.vishay.com3IRLI640GPbFDocument Number: 91314 www.vishay.com4IRLI640GPbFDocument Number: 91314 www.vishay.com5IRLI640GPbFDocument Number: 91314 www.vishay.com6IRLI640GPbFPeak Diode Re

IRLI640G, SiHLI640GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.18f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Dist. 4.8 mmQg (Max.) (nC) 66 Logic-Level Gate DriveQgs (nC) 9.0 RDS(on) Specified at VGS = 4V and 5 VQgd (nC) 38

IRLI640G, SiHLI640GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.18f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Dist. 4.8 mmQg (Max.) (nC) 66 Logic-Level Gate DriveQgs (nC) 9.0 RDS(on) Specified at VGS = 4V and 5 VQgd (nC) 38

IRFI640G, SiHFI640GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.18f = 60 Hz)RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 70COMPLIANT Dynamic dV/dt RatingQgs (nC) 13 Low Thermal ResistanceQgd (nC) 39 Lead (Pb)-fr

IRFI640G, SiHFI640GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.18f = 60 Hz)RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 70COMPLIANT Dynamic dV/dt RatingQgs (nC) 13 Low Thermal ResistanceQgd (nC) 39 Lead (Pb)-fr

Si6404DQVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETS: 2.5 V Rated0.009 at VGS = 10 V 11 30 V VDS RoHS0.010 at VGS = 4.5 V 30 10COMPLIANT0.014 at VGS = 2.5 V 8.8APPLICATIONS Battery Switch Charger SwitchDTSSOP-8* Source Pins 2, 3, 6 and 7 must be

VTI640(BRCS640R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features RDS(on) 0.3,Typical RDS(on)=0.3,low intrinsic capacitance Ciss, fast switching. / Applications ,,DC-DC

VTI640F(BRCS640F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features RDS(on) 0.15,Typical RDS(on)=0.15,low intrinsic capacitance Ciss, fast switching. / Applications ,,DC-DC

Mar 2008BVDSS = 200 VRDS(on) typ HFW640 / HFI640ID = 18 A200V N-Channel MOSFETD2-PAK I2-PAK2FEATURES13 123 Originative New DesignHFW640 HFI640 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 37 nC (Typ.)