HUF75852G3 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HUF75852G3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HUF75852G3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 500 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: TO247 TO3P TO3PF

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HUF75852G3 datasheet

..1. Size:193K fairchild semi
huf75852g3.pdf pdf_icon

HUF75852G3 Data Sheet December 2001 75A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-247 Features SOURCE Ultra Low On-Resistance DRAIN GATE - rDS(ON) = 0.016 , VGS = 10V Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com DRAIN (TAB) Pe

..2. Size:259K fairchild semi
huf75852g3 f085.pdf pdf_icon

HUFA75852G3_F085 Data Sheet December 2011 75A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-247 Features SOURCE Ultra Low On-Resistance DRAIN GATE - rDS(ON) = 0.016 , VGS = 10V Peak Current vs Pulse Width Curve UIS Rating Curve Qualified to AEC Q101 RoHS Compliant DRAIN (TAB) Ordering Information Symbol PART NUMBER PACKAGE BRA

..3. Size:751K onsemi
huf75852g3.pdf pdf_icon

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

8.1. Size:197K fairchild semi
huf75842p3.pdf pdf_icon

HUF75842P3, HUF75842S3S Data Sheet December 2001 43A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN Ultra Low On-Resistance DRAIN (FLANGE) GATE - rDS(ON) = 0.042 , VGS = 10V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and SABER Electrical Models DRAIN - Spice and SABER Therm

Otros transistores... FQU8P10, FQU9N25, HUF75542P3, HUF75631S3S, FDB86135, HUF75639S3, FDD86252, HUF75842P3, IRLB4132, HUFA75307T3ST, HUFA75321D3S, HUFA75344S3, HUFA75639S3S, FDD86110, HUFA76407DK8TF085, HUFA76409D3ST, HUFA76413DK8TF085

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