JMSH0605AGD Todos los transistores

 ..1. Size:316K  jiejie micro
 jmsh0605agd.pdf

JMSH0605AGD 60V 4.7m N-Ch Power MOSFET Features Product Summary Ultra-low RDS(ON) Parameter Value Unit VDS 60 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 54 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 4.7 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial Auto

 0.1. Size:317K  jiejie micro
 jmsh0605agdq.pdf

JMSH0605AGDQ 60V 4.7m N-Ch Power MOSFET Features Product Summary Ultra-low RDS(ON) Parameter Value Unit VDS 60 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 56 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 4.7 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications PDFN5x6-8L

 7.1. Size:1293K  jiejie micro
 jmsh0602pk.pdf

60V, 112A, 1.9m N-channel Power SGT MOSFET JMSH0602PK Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 60 V 100% Vds TESTED VGS(th)_Typ 2.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 112 A Pb-free plating RDS(ON)_Typ(@VGS=10V 1.9 mW Applications Load Switch PWM Application Power Manag

 7.2. Size:349K  jiejie micro
 jmsh0606ak.pdf

JMSH0606AK 60V 4.4m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 90 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 4.4 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial Autom

 7.3. Size:345K  jiejie micro
 jmsh0602ag.pdf

JMSH0602AG 60V 1.9m N-Ch Power MOSFET Features Product Summary Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 175 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.9 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Indus

 7.4. Size:1201K  jiejie micro
 jmsh0606pgq.pdf

60V, 118A, 4.5m N-channel Power SGT MOSFET JMSH0606PGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 60 V 100% UIS Tested VGS(th)_Typ 2.8 V 100% Vds Tested ID(@VGS=10V) 118 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 4.5 mW AEC-Q101 Qualified Applications Load Switch PWM Applicatio

 7.5. Size:412K  jiejie micro
 jmsh0601bgq.pdf

JMSH0601BGQ 60V 1.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 314 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.0 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

 7.6. Size:1179K  jiejie micro
 jmsh0606pgd.pdf

60V, 88A, 4.1m Dual N-channel Power SGT MOSFET JMSH0606PGD Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 2.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 88 A RDS(ON)_Typ(@VGS=10V 4.1 mW Applications Load Switch PWM Application Power Management PDFN5X6-8L

 7.7. Size:389K  jiejie micro
 jmsh0603akq.pdf

JMSH0603AKQ 60V 2.6m N-Ch Power MOSFET Features Product Summary Parameter Typ. Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th) 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 151 A RDS(ON) (@ VGS = 10V) 2.6 m Pb-free Lead Plating Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications TO-252-3L Top Vie

 7.8. Size:399K  jiejie micro
 jmsh0601bg.pdf

JMSH0601BG 60V 1.0m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 303 A RDS(ON)_Typ (@ VGS = 10V) 1.0 m Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Power Management in Computing, CE,

 7.9. Size:386K  jiejie micro
 jmsh0606akq.pdf

JMSH0606AKQ 60V 4.4m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 95 A RDS(ON)_Typ (@ VGS = 10V) 4.4 m Pb-free Lead Plating Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications TO-252-3L T

 7.10. Size:1197K  jiejie micro
 jmsh0603pg.pdf

60V, 106A, 2.6m N-channel Power SGT MOSFET JMSH0603PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 2.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 106 A RDS(ON)_Typ(@VGS=10V 2.6 mW Applications Load Switch PWM Application Power Management D G S PDFN5

 7.11. Size:342K  jiejie micro
 jmsh0601ag.pdf

JMSH0601AG 60V 1.4m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 197 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.4 m Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, IE 4.0, Communic

 7.12. Size:320K  jiejie micro
 jmsh0602aeq.pdf

JMSH0602AEQ 60V 2.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 224 A RDS(ON)_Typ (@ VGS = 10V) 2.0 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications TO-263-3L

 7.13. Size:1234K  jiejie micro
 jmsh0606pu.pdf

60V, 55A, 4.5m N-channel Power SGT MOSFET JMSH0606PU Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 55 A Pb-free plating RDS(ON)_Typ(@VGS=10V 4.5 mW Applications Load Switch PWM Application Power Managem

 7.14. Size:382K  jiejie micro
 jmsh0601atlq.pdf

JMSH0601ATLQ 60V 1.2m TOLL N-Ch Power MOSFET Product Summary Features Ultra low ON-resistance, RDS(ON) Parameter Value Unit VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 328 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.2 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Appli

 7.15. Size:1255K  jiejie micro
 jmsh0606pc.pdf

60V, 103A, 4.8m N-channel Power SGT MOSFET JMSH0606PC Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 103 A RDS(ON)_Typ(@VGS=10V 4.8 mW Applications Load Switch PWM Application Power Management D G S TO-2

 7.16. Size:338K  jiejie micro
 jmsh0606ag.pdf

JMSH0606AG 60V 3.7m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 2.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 98 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.7 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial Autom

 7.17. Size:407K  jiejie micro
 jmsh0602akq.pdf

JMSH0602AKQ 60V 2.2m N-Ch Power MOSFET Features Product Summary Parameter Typ. Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th) 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 206 A RDS(ON) (@ VGS = 10V) 2.2 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications TO-252-3L Top Vie

 7.18. Size:386K  jiejie micro
 jmsh0602ac jmsh0602ae.pdf

JMSH0602AC JMSH0602AE 60V 1.8m N-Ch Power MOSFET Features Product Summary Ultra-low RDS(ON) Parameter Value Unit Low Gate Charge VDS 60 V 100% UIS Tested, 100% Rg Tested VGS(th)_Typ 3.0 V ID (@ VGS = 10V) (1) 195 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.8 m Halogen-free and RoHS-compliant Applications Power Management in Computing,

 7.19. Size:343K  jiejie micro
 jmsh0606au.pdf

JMSH0606AU 60V 4.6m N-Ch Power MOSFET Features Product Summary Ultra-low RDS(ON) Parameter Value Unit VDS 60 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 62 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 4.6 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial Autom

 7.20. Size:410K  jiejie micro
 jmsh0602agq.pdf

JMSH0602AGQ 60V 1.9m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 168 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.9 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

 7.21. Size:1281K  jiejie micro
 jmsh0603pgq.pdf

60V, 152A, 2.6m N-channel Power SGT MOSFET JMSH0603PGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 60 V 100% UIS Tested VGS(th)_Typ 2.6 V 100% Vds Tested ID(@VGS=10V) 152 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 2.6 mW AEC-Q101 Qualified Applications Load Switch PWM Applica

 7.22. Size:1343K  jiejie micro
 jmsh0602pe.pdf

60V, 218A, 1.9m N-channel Power SGT MOSFET JMSH0602PE Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 2.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 218 A RDS(ON)_Typ(@VGS=10V 1.9 mW Applications Load Switch PWM Application Power Management TO-263 -3L Sc

 7.23. Size:350K  jiejie micro
 jmsh0606agq.pdf

JMSH0606AGQ 60V 3.7m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 2.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 103 A RDS(ON)_Typ (@ VGS = 10V) 3.7 m Pb-free Lead Plating Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications PDFN5x6-

 7.24. Size:349K  jiejie micro
 jmsh0603ak.pdf

JMSH0603AK 60V 2.6m N-Ch Power MOSFET Features Product Summary Parameter Typ. Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 145 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 2.6 m Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, IE 4.0, Com

 7.25. Size:1256K  jiejie micro
 jmsh0601ptl.pdf

60V, 332A, 1.2m N-channel Power SGT MOSFET JMSH0601PTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 2.5 V Halogen-free; RoHS-compliant ID(@VGS=10V) 332 A RDS(ON)_Typ(@VGS=10V 1.2 mW Applications Load Switch PWM Application Power Management PowerJE 10x1

 7.26. Size:1241K  jiejie micro
 jmsh0603pe.pdf

60V, 184A, 2.5m N-channel Power SGT MOSFET JMSH0603PE Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 2.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 184 A RDS(ON)_Typ(@VGS=10V 2.5 mW Applications Load Switch PWM Application Power Management D G S TO-2

 7.27. Size:644K  jiejie micro
 jmsh0602pg.pdf

JMSH0602PG 60V 1.6m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 200 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.6 mW Applications Power Management in Computing, CE, IE 4.0, Communications Current Switching in

 7.28. Size:381K  jiejie micro
 jmsh0601atl.pdf

JMSH0601ATL 60V 1.2m TOLL N-Ch Power MOSFET Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 348 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.2 m Halogen-free and RoHS-compliant Applications Power Management in Computi

 7.29. Size:1190K  jiejie micro
 jmsh0606pg.pdf

60V, 114A, 4.5m N-channel Power SGT MOSFET JMSH0606PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 114 A RDS(ON)_Typ(@VGS=10V 4.5 mW Applications Load Switch PWM Application Power Management D G S PDFN

 7.30. Size:1249K  jiejie micro
 jmsh0606pk.pdf

60V, 68A, 4.5m N-channel Power SGT MOSFET JMSH0606PK Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 68 A RDS(ON)_Typ(@VGS=10V 4.5 mW Applications Load Switch PWM Application Power Management D G S TO-252

 7.31. Size:415K  jiejie micro
 jmsh0601agq.pdf

JMSH0601AGQ 60V 1.3m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 225 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.3 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

 7.32. Size:652K  jiejie micro
 jmsh0603mgq.pdf

60V, 163A, 2.3m N-channel Power SGT MOSFET JMSH0603MGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 60 V 100% UIS Tested VGS(th)_Typ 2.8 V 100% Vds Tested ID(@VGS=10V) 163 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 2.3 m AEC-Q101 Qualified Applications Load Switch PWM Applica

 7.33. Size:1176K  jiejie micro
 jmsh0606pgdq.pdf

60V, 61A, 4.1m Dual N-channel Power SGT MOSFET JMSH0606PGDQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 60 V 100% UIS Tested VGS(th)_Typ 2.7 V 100% Vds Tested ID(@VGS=10V) 61 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 4.1 mW AEC-Q101 Qualified Applications Load Switch PWM Appli

 7.34. Size:1272K  jiejie micro
 jmsh0602pc.pdf

60V, 178A, 2.4m N-channel Power SGT MOSFET JMSH0602PC Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 178 A Pb-free plating RDS(ON)_Typ(@VGS=10V 2.4 mW Applications Load Switch PWM Application Power Manag

 7.35. Size:1272K  jiejie micro
 jmsh0603pk.pdf

60V, 86A, 2.8m N-channel Power SGT MOSFET JMSH0603PK Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 2.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 86 A RDS(ON)_Typ(@VGS=10V 2.8 mW Applications Load Switch PWM Application Power Management D G S TO-252

 7.36. Size:349K  jiejie micro
 jmsh0602ak.pdf

JMSH0602AK 60V 2.2m N-Ch Power MOSFET Features Product Summary Parameter Typ. Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th) 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 195 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 2.2 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial Automation, C

 7.37. Size:1193K  jiejie micro
 jmsh0602pgq.pdf

60V, 179A, 1.6m N-channel Power SGT MOSFET JMSH0602PGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 60 V 100% UIS Tested VGS(th)_Typ 3.0 V 100% Vds Tested ID(@VGS=10V) 179 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 1.6 mW AEC-Q101 Qualified Applications Load Switch PWM Applicat