JMSH0605AGD
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JMSH0605AGD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 60
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 54
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 27
nS
Cossⓘ - Capacitancia
de salida: 940
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0058
Ohm
Paquete / Cubierta: PDFN5X6-8L-D
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JMSH0605AGD
Datasheet (PDF)
..1. Size:316K jiejie micro
jmsh0605agd.pdf 
JMSH0605AGD60V 4.7m N-Ch Power MOSFETFeaturesProduct Summary Ultra-low RDS(ON) Parameter Value Unit VDS60 V Low Gate Charge VGS(th)_Typ2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 54 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.7 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial Auto
0.1. Size:317K jiejie micro
jmsh0605agdq.pdf
JMSH0605AGDQ60V 4.7m N-Ch Power MOSFETFeaturesProduct Summary Ultra-low RDS(ON)Parameter Value Unit VDS60 V Low Gate Charge VGS(th)_Typ2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 56 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.7 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive ApplicationsPDFN5x6-8L
7.1. Size:1293K jiejie micro
jmsh0602pk.pdf
60V, 112A, 1.9m N-channel Power SGT MOSFETJMSH0602PKProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 60 V 100% Vds TESTEDVGS(th)_Typ 2.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 112 A Pb-free platingRDS(ON)_Typ(@VGS=10V 1.9 mWApplications Load Switch PWM Application Power Manag
7.2. Size:349K jiejie micro
jmsh0606ak.pdf
JMSH0606AK60V 4.4m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 90 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 4.4 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial Autom
7.3. Size:345K jiejie micro
jmsh0602ag.pdf
JMSH0602AG60V 1.9m N-Ch Power MOSFETFeaturesProduct Summary Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS60 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 175 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.9 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Indus
7.4. Size:1201K jiejie micro
jmsh0606pgq.pdf
60V, 118A, 4.5m N-channel Power SGT MOSFETJMSH0606PGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)Parameters Value Unit Low Gate ChargeVDSS 60 V 100% UIS TestedVGS(th)_Typ 2.8 V 100% Vds TestedID(@VGS=10V) 118 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 4.5 mW AEC-Q101 QualifiedApplications Load Switch PWM Applicatio
7.5. Size:412K jiejie micro
jmsh0601bgq.pdf
JMSH0601BGQ60V 1.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 314 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.0 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications
7.6. Size:1179K jiejie micro
jmsh0606pgd.pdf
60V, 88A, 4.1m Dual N-channel Power SGT MOSFETJMSH0606PGDProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 2.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 88 ARDS(ON)_Typ(@VGS=10V 4.1 mWApplications Load Switch PWM Application Power ManagementPDFN5X6-8L
7.7. Size:389K jiejie micro
jmsh0603akq.pdf
JMSH0603AKQ60V 2.6m N-Ch Power MOSFETFeaturesProduct SummaryParameter Typ. Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 151 A RDS(ON) (@ VGS = 10V)2.6 m Pb-free Lead Plating Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive ApplicationsTO-252-3L Top Vie
7.8. Size:399K jiejie micro
jmsh0601bg.pdf
JMSH0601BG60V 1.0m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 303 A RDS(ON)_Typ (@ VGS = 10V)1.0 m Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Power Management in Computing, CE,
7.9. Size:386K jiejie micro
jmsh0606akq.pdf
JMSH0606AKQ60V 4.4m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 95 A RDS(ON)_Typ (@ VGS = 10V)4.4 m Pb-free Lead Plating Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive ApplicationsTO-252-3L T
7.10. Size:1197K jiejie micro
jmsh0603pg.pdf
60V, 106A, 2.6m N-channel Power SGT MOSFETJMSH0603PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 2.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 106 ARDS(ON)_Typ(@VGS=10V 2.6 mWApplications Load Switch PWM Application Power ManagementDG SPDFN5
7.11. Size:342K jiejie micro
jmsh0601ag.pdf
JMSH0601AG60V 1.4m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 197 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.4 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE 4.0, Communic
7.12. Size:320K jiejie micro
jmsh0602aeq.pdf
JMSH0602AEQ60V 2.0m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 224 A RDS(ON)_Typ (@ VGS = 10V)2.0 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive ApplicationsTO-263-3L
7.13. Size:1234K jiejie micro
jmsh0606pu.pdf
60V, 55A, 4.5m N-channel Power SGT MOSFETJMSH0606PUProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 55 A Pb-free platingRDS(ON)_Typ(@VGS=10V 4.5 mWApplications Load Switch PWM Application Power Managem
7.14. Size:382K jiejie micro
jmsh0601atlq.pdf
JMSH0601ATLQ60V 1.2m TOLL N-Ch Power MOSFETProduct SummaryFeatures Ultralow ON-resistance, RDS(ON) Parameter Value Unit VDS60 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 328 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.2 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Appli
7.15. Size:1255K jiejie micro
jmsh0606pc.pdf
60V, 103A, 4.8m N-channel Power SGT MOSFETJMSH0606PCProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 103 ARDS(ON)_Typ(@VGS=10V 4.8 mWApplications Load Switch PWM Application Power ManagementDG STO-2
7.16. Size:338K jiejie micro
jmsh0606ag.pdf
JMSH0606AG60V 3.7m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ2.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 98 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.7 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial Autom
7.17. Size:407K jiejie micro
jmsh0602akq.pdf
JMSH0602AKQ60V 2.2m N-Ch Power MOSFETFeaturesProduct SummaryParameter Typ. Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 206 A RDS(ON) (@ VGS = 10V)2.2 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive ApplicationsTO-252-3L Top Vie
7.18. Size:386K jiejie micro
jmsh0602ac jmsh0602ae.pdf
JMSH0602ACJMSH0602AE60V 1.8m N-Ch Power MOSFETFeaturesProduct Summary Ultra-low RDS(ON)Parameter Value Unit Low Gate Charge VDS60 V 100% UIS Tested, 100% Rg Tested VGS(th)_Typ3.0 V ID (@ VGS = 10V) (1) 195 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.8 m Halogen-free and RoHS-compliantApplications Power Management in Computing,
7.19. Size:343K jiejie micro
jmsh0606au.pdf
JMSH0606AU60V 4.6m N-Ch Power MOSFETFeaturesProduct Summary Ultra-low RDS(ON) Parameter Value Unit VDS60 V Low Gate Charge VGS(th)_Typ2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 62 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.6 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial Autom
7.20. Size:410K jiejie micro
jmsh0602agq.pdf
JMSH0602AGQ60V 1.9m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 168 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.9 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications
7.21. Size:1281K jiejie micro
jmsh0603pgq.pdf
60V, 152A, 2.6m N-channel Power SGT MOSFETJMSH0603PGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) ParametersValue Unit Low Gate ChargeVDSS 60 V 100% UIS TestedVGS(th)_Typ 2.6 V 100% Vds TestedID(@VGS=10V) 152 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 2.6 mW AEC-Q101 QualifiedApplications Load Switch PWM Applica
7.22. Size:1343K jiejie micro
jmsh0602pe.pdf
60V, 218A, 1.9m N-channel Power SGT MOSFETJMSH0602PEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 2.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 218 ARDS(ON)_Typ(@VGS=10V 1.9 mWApplications Load Switch PWM Application Power ManagementTO-263 -3LSc
7.23. Size:350K jiejie micro
jmsh0606agq.pdf
JMSH0606AGQ60V 3.7m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ2.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 103 A RDS(ON)_Typ (@ VGS = 10V)3.7 m Pb-free Lead Plating Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive ApplicationsPDFN5x6-
7.24. Size:349K jiejie micro
jmsh0603ak.pdf
JMSH0603AK60V 2.6m N-Ch Power MOSFETFeaturesProduct SummaryParameter Typ. Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 145 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)2.6 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE 4.0, Com
7.25. Size:1256K jiejie micro
jmsh0601ptl.pdf
60V, 332A, 1.2m N-channel Power SGT MOSFETJMSH0601PTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 2.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 332 ARDS(ON)_Typ(@VGS=10V 1.2 mWApplications Load Switch PWM Application Power ManagementPowerJE10x1
7.26. Size:1241K jiejie micro
jmsh0603pe.pdf
60V, 184A, 2.5m N-channel Power SGT MOSFETJMSH0603PEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 2.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 184 ARDS(ON)_Typ(@VGS=10V 2.5 mWApplications Load Switch PWM Application Power ManagementDG STO-2
7.27. Size:644K jiejie micro
jmsh0602pg.pdf
JMSH0602PG60V 1.6m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 200 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.6 mWApplications Power Management in Computing, CE, IE 4.0, Communications Current Switching in
7.28. Size:381K jiejie micro
jmsh0601atl.pdf
JMSH0601ATL60V 1.2m TOLL N-Ch Power MOSFETProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)Parameter Value Unit VDS60 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 348 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.2 m Halogen-free and RoHS-compliantApplications Power Management in Computi
7.29. Size:1190K jiejie micro
jmsh0606pg.pdf
60V, 114A, 4.5m N-channel Power SGT MOSFETJMSH0606PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 114 ARDS(ON)_Typ(@VGS=10V 4.5 mWApplications Load Switch PWM Application Power ManagementDG SPDFN
7.30. Size:1249K jiejie micro
jmsh0606pk.pdf
60V, 68A, 4.5m N-channel Power SGT MOSFETJMSH0606PKProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 68 ARDS(ON)_Typ(@VGS=10V 4.5 mWApplications Load Switch PWM Application Power ManagementDG STO-252
7.31. Size:415K jiejie micro
jmsh0601agq.pdf
JMSH0601AGQ60V 1.3m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 225 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.3 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications
7.32. Size:652K jiejie micro
jmsh0603mgq.pdf
60V, 163A, 2.3m N-channel Power SGT MOSFETJMSH0603MGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate ChargeVDSS 60 V 100% UIS TestedVGS(th)_Typ 2.8 V 100% Vds TestedID(@VGS=10V) 163 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 2.3 m AEC-Q101 QualifiedApplications Load Switch PWM Applica
7.33. Size:1176K jiejie micro
jmsh0606pgdq.pdf
60V, 61A, 4.1m Dual N-channel Power SGT MOSFETJMSH0606PGDQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate ChargeVDSS 60 V 100% UIS TestedVGS(th)_Typ 2.7 V 100% Vds TestedID(@VGS=10V) 61 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 4.1 mW AEC-Q101 QualifiedApplications Load Switch PWM Appli
7.34. Size:1272K jiejie micro
jmsh0602pc.pdf
60V, 178A, 2.4m N-channel Power SGT MOSFETJMSH0602PCProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 178 A Pb-free platingRDS(ON)_Typ(@VGS=10V 2.4 mWApplications Load Switch PWM Application Power Manag
7.35. Size:1272K jiejie micro
jmsh0603pk.pdf
60V, 86A, 2.8m N-channel Power SGT MOSFETJMSH0603PKProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 2.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 86 ARDS(ON)_Typ(@VGS=10V 2.8 mWApplications Load Switch PWM Application Power ManagementDG STO-252
7.36. Size:349K jiejie micro
jmsh0602ak.pdf
JMSH0602AK60V 2.2m N-Ch Power MOSFETFeaturesProduct SummaryParameter Typ. Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 195 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 2.2 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial Automation, C
7.37. Size:1193K jiejie micro
jmsh0602pgq.pdf
60V, 179A, 1.6m N-channel Power SGT MOSFETJMSH0602PGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)ParametersValue Unit Low Gate ChargeVDSS 60 V 100% UIS TestedVGS(th)_Typ 3.0 V 100% Vds TestedID(@VGS=10V) 179 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 1.6 mW AEC-Q101 QualifiedApplications Load Switch PWM Applicat
Otros transistores... JBE102Y
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, JBE113P
, JBL083M
, JBL101N
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, JMSH0605AGDQ
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, JMSH0606AU
, JMSH0606PC
, JMSH0606PG
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History: DHS055N07E
| JMSH1008PK
| JMSH0602PC
| JMSH0606PK
