FDD86110 Todos los transistores

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FDD86110 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD86110

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 127 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Tensión umbral compuerta-fuente Vgs(th): 4 V

Corriente continua de drenaje (Id): 50 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.0102 Ohm

Empaquetado / Estuche: TO252

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FDD86110 Datasheet (PDF)

1.1. fdd86110.pdf Size:330K _fairchild_semi

FDD86110
FDD86110

December 2014 FDD86110 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 50 A, 10.2 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor‘s advanced PowerTrench® process that Max rDS(on) = 10.2 mΩ at VGS = 10 V, ID = 12.5 A incorporates Shielded Gate technology. This process has been optimized for th

3.1. fdd86113lz.pdf Size:239K _fairchild_semi

FDD86110
FDD86110

June 2013 FDD86113LZ N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 5.5 A, 104 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process Max rDS(on) = 104 mΩ at VGS = 10 V, ID = 4.2 A that incorporates Shielded Gate technology. This process has been optimi

4.1. fdd86102.pdf Size:403K _fairchild_semi

FDD86110
FDD86110

June 2011 FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 m? Features Max rDS(on) = 24 m? at VGS = 10 V, ID = 8 A General Description Max rDS(on) = 38 m? at VGS = 6 V, ID = 6 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has High performance trench technology for extremely low rDS(on) been optimized for rDS(on), swi

4.2. fdd86102lz.pdf Size:365K _fairchild_semi

FDD86110
FDD86110

October 2010 FDD86102LZ N-Channel PowerTrench MOSFET 100 V, 35 A, 22.5 m? Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 22.5 m? at VGS = 10 V, ID = 8 A Semiconductors advanced PowerTrench process that has Max rDS(on) = 31 m? at VGS = 4.5 V, ID = 7 A been especially tailored to minimize the on-state resistance and switching loss. G-S

Otros transistores... HUF75639S3 , FDD86252 , HUF75842P3 , HUF75852G3 , HUFA75307T3ST , HUFA75321D3S , HUFA75344S3 , HUFA75639S3S , BUZ90 , HUFA76407DK8T_F085 , HUFA76409D3ST , HUFA76413DK8T_F085 , HUFA76419D3S , HUFA76429D3 , HUFA76429D3ST_F085 , HUFA76645S3ST_F085 , FDMS8018 .

 


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