JMSH1008PE Todos los transistores

 ..1. Size:1077K  jiejie micro
 jmsh1008pc jmsh1008pe.pdf

JMSH1008PC JMSH1008PE 100V 6.3mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% R 100% UIS Tested, 100% Rgg Tested Tested ID (@ VGS = 10V) (1) 113 A Pb-free Lead Plating Pb-free Lead Plating RDS(ON)_Typ (@ VGS

 5.1. Size:654K  jiejie micro
 jmsh1008pg.pdf

JMSH1008PG 100V 6.5mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% RggTested 100% UIS Tested, 100% R Tested ID (@ VGS = 10V) (1) 80 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 6.5 Pb-free Lead Plating

 5.2. Size:1190K  jiejie micro
 jmsh1008pgq.pdf

100V, 90A, 7.4m N-channel Power SGT MOSFET JMSH1008PGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 100 V 100% UIS Tested VGS(th)_Typ 3.1 V 100% Vds Tested ID(@VGS=10V) 90 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 7.4 mW AEC-Q101 Qualified Applications Load Switch PWM Applicat

 5.3. Size:1194K  jiejie micro
 jmsh1008pk.pdf

100V, 56A, 6.3m N-channel Power SGT MOSFET JMSH1008PK Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 56 A RDS(ON)_Typ(@VGS=10V 6.3 mW Applications Load Switch PWM Application Power Management D G S TO-2