JMSL030SAG
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JMSL030SAG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 104
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 30
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 327
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19.4
nS
Cossⓘ - Capacitancia
de salida: 5253
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00069
Ohm
Paquete / Cubierta:
PDFN5X6-8L
Búsqueda de reemplazo de JMSL030SAG
MOSFET
-
Selección ⓘ de transistores por parámetros
JMSL030SAG
Datasheet (PDF)
..1. Size:296K jiejie micro
jmsl030sag.pdf 
JMSL030SAG30V 0.55m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS30 V Low Gate Charge VGS(th)_Typ1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 327 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)0.55 m RDS(ON)_Typ (@ VGS = 4.5V)0.80 m Halogen-free and RoHS-compliantApplications Pow
6.1. Size:1236K jiejie micro
jmsl030spg.pdf
30V, 357A, 1.1m N-channel Power SGT MOSFETJMSL030SPGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 357 AApplications RDS(ON)_Typ(@VGS=10V 0.6 mWRDS(ON)_Typ(@VGS=4.5V 1.1 mW Load Switch PWM Application Powe
6.2. Size:1237K jiejie micro
jmsl030stg.pdf
30V, 358A, 1.0m N-channel Power SGT MOSFETJMSL030STGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 358 AApplications RDS(ON)_Typ(@VGS=10V 0.5 mWRDS(ON)_Typ(@VGS=4.5V 1.0 mW Load Switch PWM Application Powe
7.1. Size:276K 1
jmsl0302au.pdf
JMSL0302AU30V 1.2m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low RDS(ON) VDS30 V High Current Capability VGS(th)_Typ1.7 V ESD Enhanced to HBM Rating up to 1.5kV ID (@ VGS = 10V) (1) 145 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V)1.2 m RDS(ON)_Typ (@ VGS = 4.5V)2.0 mApplications Power Management i
7.2. Size:236K 1
jmsl0302ag.pdf
JMSL0302AG30V 1.3m N-Ch Power MOSFETFeatures Product SummaryParameter Typ. Unit Ultra-low RDS(ON) VDS30 V High Current Capability VGS(th)1.7 V ESD Enhanced to HBM Rating up to 1.5kV ID (@ VGS = 10V) (1) 178 A 100% UIS Tested, 100% Rg Tested RDS(ON) (@ VGS = 10V)1.3 m RDS(ON) (@ VGS = 4.5V)2.0 mApplications Power Management in Computing,
7.3. Size:335K jiejie micro
jmsl0303au.pdf
JMSL0303AU30V 1.8m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS30 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 119 A RDS(ON)_Typ (@ VGS = 10V)1.8 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)2.7 m Halogen-free and RoHS-compliantApplications Powe
7.4. Size:1224K jiejie micro
jmsl0302pu.pdf
30V, 94A, 2.4m N-channel Power SGT MOSFETJMSL0302PUProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 94 ARDS(ON)_Typ(@VGS=10V 1.8 mWRDS(ON)_Typ(@VGS=4.5V 2.4 mWApplications Load Switch PWM Application Power
7.5. Size:297K jiejie micro
jmsl0303ag.pdf
JMSL0303AG30V 1.7m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS30 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 136 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.7 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE 4.0,
7.6. Size:281K jiejie micro
jmsl0307av.pdf
JMSL0307AV30V 3.7m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS30 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 29 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)3.7 m RDS(ON)_Typ (@ VGS = 4.5V)5.3 m Halogen-free and RoHS-compliantApplications Power M
7.7. Size:294K jiejie micro
jmsl0307ag.pdf
JMSL0307AG30V 3.8m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS30 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 65 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)3.8 m RDS(ON)_Typ (@ VGS = 4.5V)5.8 m Halogen-free and RoHS-compliantApplications Power M
7.8. Size:293K jiejie micro
jmsl0302ak.pdf
JMSL0302AK30V 1.7m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS30 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 161 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.7 m RDS(ON)_Typ (@ VGS = 4.5V)2.2 m Halogen-free and RoHS-compliantApplications Power Mana
7.9. Size:298K jiejie micro
jmsl0302au.pdf
JMSL0302AU30V 1.2m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS30 V ESD Enhanced to HBM Rating up to 1.0kV VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 145 A RDS(ON)_Typ (@ VGS = 10V)1.2 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)2.0 m Halogen-free and RoHS-compliant
7.10. Size:312K jiejie micro
jmsl0303ak.pdf
JMSL0303AK30V 2.7m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS30 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 118 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)2.7 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE 4.0, Co
7.11. Size:297K jiejie micro
jmsl0302ag.pdf
JMSL0302AG30V 1.3m N-Ch Power MOSFETProduct SummaryFeaturesParameter Typ. Unit Ultra-low RDS(ON) VDS30 V ESD Enhanced to HBM Rating up to 1.0kV VGS(th)1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 178 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V)1.3 m RDS(ON) (@ VGS = 4.5V)2.0 m Halogen-free and RoHS-compliantApplications
7.12. Size:380K jiejie micro
jmsl0302dg.pdf
JMSL0302DG30V 1.3m N-Ch Power MOSFETFeaturesProduct Summary Ultra-low ON-resistance, RDS(ON)Parameter Typ. Unit VDS Enhanced ESD @ HBM Rating up to 1.0kV 30 V VGS(th)1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 174 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V)1.3 m Halogen-free and RoHS-compliant RDS(ON) (@ VGS = 4.5V)2.3 mApplicat
7.13. Size:1281K jiejie micro
jmsl0303tg.pdf
30V, 162A, 2.5m N-channel Power SGT MOSFETJMSL0303TGProduct SummaryFeatures Excellent RDS(ON) and Low Gate Charge ParametersValue UnitVDSS 30 V 100% UIS TestedVGS(th)_Typ 1.6 V 100% Vds TestedID(@VGS=10V) 162 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 1.8 mWRDS(ON)_Typ(@VGS=4.5V 2.5 mWApplications Load Switch PWM Application Pow
7.14. Size:1234K jiejie micro
jmsl0303tu.pdf
30V, 88A, 2.7m N-channel Power SGT MOSFETJMSL0303TUProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 88 A Pb-free plating RDS(ON)_Typ(@VGS=10V 1.9 mWRDS(ON)_Typ(@VGS=4.5V 2.7 mWApplications Load Switch PWM Ap
7.15. Size:336K jiejie micro
jmsl0302bu.pdf
JMSL0302BU30V 1.5m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS30 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 135 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.5 m RDS(ON)_Typ (@ VGS = 4.5V)2.2 m Halogen-free and RoHS-compliantApplications Power
7.16. Size:296K jiejie micro
jmsl0301ag.pdf
JMSL0301AG30V 0.85m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS30 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 245 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)0.85 m RDS(ON)_Typ (@ VGS = 4.5V)1.3 m Halogen-free and RoHS-compliantApplications Powe
7.17. Size:1264K jiejie micro
jmsl0301tg.pdf
30V, 248A, 1.2 m N-channel Power SGT MOSFETJMSL0301TGProduct SummaryFeatures Excellent RDS(ON) and Low Gate Charge Parameters Value UnitVDSS 30 V 100% UIS TestedVGS(th)_Typ 1.7 V 100% Vds TestedID(@VGS=10V) 248 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 0.9 mWRDS(ON)_Typ(@VGS=4.5V 1.2 mWApplications Load Switch PWM Application Pow
7.18. Size:1232K jiejie micro
jmsl0302pg2.pdf
30V, 208A, 1.9m N-channel Power SGT MOSFETJMSL0302PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 208 ARDS(ON)_Typ(@VGS=10V 1.3 mWRDS(ON)_Typ(@VGS=4.5V 1.9 mWApplications Load Switch PWM Application Pow
Otros transistores... JMSH1008AKQ
, JMSH1008PC
, JMSH1008PE
, JMSH1008PG
, JMSH1008PGQ
, JMSH1008PK
, JMSL0307AG
, JMSL0307AV
, IRFP260N
, JMSL030SPG
, JMSL030STG
, JMSL0310AU
, JMSL0315AG
, JMSL0315AGD
, JMSL0315AK
, JMSL0303AG
, JMSL0303AK
.
