HUFA76409D3ST MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HUFA76409D3ST
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 49 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.063 Ohm
Paquete / Cubierta: TO252 DPAK
Búsqueda de reemplazo de MOSFET HUFA76409D3ST
Principales características: HUFA76409D3ST
hufa76409d3st.pdf
HUFA76409D3, HUFA76409D3ST Data Sheet December 2001 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance - rDS(ON) = 0.063 , VGS = 10V DRAIN DRAIN SOURCE (FLANGE) (FLANGE) - rDS(ON) = 0.071 , VGS = 5V DRAIN GATE Simulation Models GATE - Temperature Compensated PSPICE and SABER
hufa76409d3.pdf
HUFA76409D3, HUFA76409D3ST Data Sheet December 2001 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance - rDS(ON) = 0.063 , VGS = 10V DRAIN DRAIN SOURCE (FLANGE) (FLANGE) - rDS(ON) = 0.071 , VGS = 5V DRAIN GATE Simulation Models GATE - Temperature Compensated PSPICE and SABER
hufa76409p3.pdf
HUFA76409P3 Data Sheet December 2001 17A, 60V, 0.070 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB Features Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.062 , VGS = 10V GATE - rDS(ON) = 0.070 , VGS = 5V Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models DRAIN - Spice and SABER Thermal Impedance
hufa76407d3st hufa76407d3 hufa76407d3s.pdf
HUFA76407D3, HUFA76407D3S Data Sheet December 2001 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features DRAIN DRAIN SOURCE Ultra Low On-Resistance (FLANGE) (FLANGE) DRAIN GATE - rDS(ON) = 0.092 , VGS = 10V - rDS(ON) = 0.107 , VGS = 5V GATE SOURCE Simulation Models - Temperature Compensated PSPICE a
Otros transistores... HUF75842P3 , HUF75852G3 , HUFA75307T3ST , HUFA75321D3S , HUFA75344S3 , HUFA75639S3S , FDD86110 , HUFA76407DK8TF085 , K4145 , HUFA76413DK8TF085 , HUFA76419D3S , HUFA76429D3 , HUFA76429D3STF085 , HUFA76645S3STF085 , FDMS8018 , MTP3055VL , NDC7001C .
History: JMSH0805PE | DSU007N04NA
History: JMSH0805PE | DSU007N04NA
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