JMSL0301TG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JMSL0301TG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 104 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 248 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 54 nS
Cossⓘ - Capacitancia de salida: 3481 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0011 Ohm
Encapsulados: PDFN5X6-8L
Búsqueda de reemplazo de JMSL0301TG MOSFET
- Selecciónⓘ de transistores por parámetros
JMSL0301TG datasheet
..1. Size:1264K jiejie micro
jmsl0301tg.pdf 
30V, 248A, 1.2 m N-channel Power SGT MOSFET JMSL0301TG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit VDSS 30 V 100% UIS Tested VGS(th)_Typ 1.7 V 100% Vds Tested ID(@VGS=10V) 248 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 0.9 mW RDS(ON)_Typ(@VGS=4.5V 1.2 mW Applications Load Switch PWM Application Pow
6.1. Size:296K jiejie micro
jmsl0301ag.pdf
JMSL0301AG 30V 0.85m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 30 V Low Gate Charge VGS(th)_Typ 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 245 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 0.85 m RDS(ON)_Typ (@ VGS = 4.5V) 1.3 m Halogen-free and RoHS-compliant Applications Powe
7.1. Size:276K 1
jmsl0302au.pdf
JMSL0302AU 30V 1.2m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 30 V High Current Capability VGS(th)_Typ 1.7 V ESD Enhanced to HBM Rating up to 1.5kV ID (@ VGS = 10V) (1) 145 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 1.2 m RDS(ON)_Typ (@ VGS = 4.5V) 2.0 m Applications Power Management i
7.2. Size:236K 1
jmsl0302ag.pdf
JMSL0302AG 30V 1.3m N-Ch Power MOSFET Features Product Summary Parameter Typ. Unit Ultra-low RDS(ON) VDS 30 V High Current Capability VGS(th) 1.7 V ESD Enhanced to HBM Rating up to 1.5kV ID (@ VGS = 10V) (1) 178 A 100% UIS Tested, 100% Rg Tested RDS(ON) (@ VGS = 10V) 1.3 m RDS(ON) (@ VGS = 4.5V) 2.0 m Applications Power Management in Computing,
7.3. Size:335K jiejie micro
jmsl0303au.pdf
JMSL0303AU 30V 1.8m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 30 V Low Gate Charge VGS(th)_Typ 1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 119 A RDS(ON)_Typ (@ VGS = 10V) 1.8 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 2.7 m Halogen-free and RoHS-compliant Applications Powe
7.4. Size:1224K jiejie micro
jmsl0302pu.pdf
30V, 94A, 2.4m N-channel Power SGT MOSFET JMSL0302PU Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 30 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 94 A RDS(ON)_Typ(@VGS=10V 1.8 mW RDS(ON)_Typ(@VGS=4.5V 2.4 mW Applications Load Switch PWM Application Power
7.5. Size:297K jiejie micro
jmsl0303ag.pdf
JMSL0303AG 30V 1.7m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 30 V Low Gate Charge VGS(th)_Typ 1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 136 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.7 m Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, IE 4.0,
7.6. Size:281K jiejie micro
jmsl0307av.pdf
JMSL0307AV 30V 3.7m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 30 V Low Gate Charge VGS(th)_Typ 1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 29 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 3.7 m RDS(ON)_Typ (@ VGS = 4.5V) 5.3 m Halogen-free and RoHS-compliant Applications Power M
7.7. Size:294K jiejie micro
jmsl0307ag.pdf
JMSL0307AG 30V 3.8m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 30 V Low Gate Charge VGS(th)_Typ 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 65 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 3.8 m RDS(ON)_Typ (@ VGS = 4.5V) 5.8 m Halogen-free and RoHS-compliant Applications Power M
7.8. Size:293K jiejie micro
jmsl0302ak.pdf
JMSL0302AK 30V 1.7m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 30 V Low Gate Charge VGS(th)_Typ 1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 161 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.7 m RDS(ON)_Typ (@ VGS = 4.5V) 2.2 m Halogen-free and RoHS-compliant Applications Power Mana
7.9. Size:1236K jiejie micro
jmsl030spg.pdf
30V, 357A, 1.1m N-channel Power SGT MOSFET JMSL030SPG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 30 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 357 A Applications RDS(ON)_Typ(@VGS=10V 0.6 mW RDS(ON)_Typ(@VGS=4.5V 1.1 mW Load Switch PWM Application Powe
7.10. Size:298K jiejie micro
jmsl0302au.pdf
JMSL0302AU 30V 1.2m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 30 V ESD Enhanced to HBM Rating up to 1.0kV VGS(th)_Typ 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 145 A RDS(ON)_Typ (@ VGS = 10V) 1.2 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 2.0 m Halogen-free and RoHS-compliant
7.11. Size:312K jiejie micro
jmsl0303ak.pdf
JMSL0303AK 30V 2.7m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 30 V Low Gate Charge VGS(th)_Typ 1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 118 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 2.7 m Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, IE 4.0, Co
7.12. Size:297K jiejie micro
jmsl0302ag.pdf
JMSL0302AG 30V 1.3m N-Ch Power MOSFET Product Summary Features Parameter Typ. Unit Ultra-low RDS(ON) VDS 30 V ESD Enhanced to HBM Rating up to 1.0kV VGS(th) 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 178 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V) 1.3 m RDS(ON) (@ VGS = 4.5V) 2.0 m Halogen-free and RoHS-compliant Applications
7.13. Size:296K jiejie micro
jmsl030sag.pdf
JMSL030SAG 30V 0.55m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 30 V Low Gate Charge VGS(th)_Typ 1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 327 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 0.55 m RDS(ON)_Typ (@ VGS = 4.5V) 0.80 m Halogen-free and RoHS-compliant Applications Pow
7.14. Size:380K jiejie micro
jmsl0302dg.pdf
JMSL0302DG 30V 1.3m N-Ch Power MOSFET Features Product Summary Ultra-low ON-resistance, RDS(ON) Parameter Typ. Unit VDS Enhanced ESD @ HBM Rating up to 1.0kV 30 V VGS(th) 1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 174 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V) 1.3 m Halogen-free and RoHS-compliant RDS(ON) (@ VGS = 4.5V) 2.3 m Applicat
7.15. Size:1237K jiejie micro
jmsl030stg.pdf
30V, 358A, 1.0m N-channel Power SGT MOSFET JMSL030STG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 30 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 358 A Applications RDS(ON)_Typ(@VGS=10V 0.5 mW RDS(ON)_Typ(@VGS=4.5V 1.0 mW Load Switch PWM Application Powe
7.16. Size:1281K jiejie micro
jmsl0303tg.pdf
30V, 162A, 2.5m N-channel Power SGT MOSFET JMSL0303TG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit VDSS 30 V 100% UIS Tested VGS(th)_Typ 1.6 V 100% Vds Tested ID(@VGS=10V) 162 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 1.8 mW RDS(ON)_Typ(@VGS=4.5V 2.5 mW Applications Load Switch PWM Application Pow
7.17. Size:1234K jiejie micro
jmsl0303tu.pdf
30V, 88A, 2.7m N-channel Power SGT MOSFET JMSL0303TU Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 30 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 88 A Pb-free plating RDS(ON)_Typ(@VGS=10V 1.9 mW RDS(ON)_Typ(@VGS=4.5V 2.7 mW Applications Load Switch PWM Ap
7.18. Size:336K jiejie micro
jmsl0302bu.pdf
JMSL0302BU 30V 1.5m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 30 V Low Gate Charge VGS(th)_Typ 1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 135 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.5 m RDS(ON)_Typ (@ VGS = 4.5V) 2.2 m Halogen-free and RoHS-compliant Applications Power
7.19. Size:1232K jiejie micro
jmsl0302pg2.pdf
30V, 208A, 1.9m N-channel Power SGT MOSFET JMSL0302PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 30 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 208 A RDS(ON)_Typ(@VGS=10V 1.3 mW RDS(ON)_Typ(@VGS=4.5V 1.9 mW Applications Load Switch PWM Application Pow
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History: AP25N170I
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