HUFA76645S3STF085 Todos los transistores

 

HUFA76645S3STF085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HUFA76645S3STF085
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 310 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 16 V
   Corriente continua de drenaje |Id|: 75 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Carga de la puerta (Qg): 153 nC
   Resistencia entre drenaje y fuente RDS(on): 0.014 Ohm
   Paquete / Cubierta: TO263 D2PAK

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HUFA76645S3STF085 Datasheet (PDF)

 1.1. Size:217K  fairchild semi
hufa76645p3 hufa76645s3s hufa76645s3st.pdf

HUFA76645S3STF085
HUFA76645S3STF085

HUFA76645P3, HUFA76645S3SData Sheet January 200275A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceSOURCE DRAIN- rDS(ON) = 0.014, VGS = 10VDRAIN (FLANGE)GATE - rDS(ON) = 0.015, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER Electrical

 1.2. Size:302K  fairchild semi
hufa76645s3st f085.pdf

HUFA76645S3STF085
HUFA76645S3STF085

HUFA76645S3ST_F085Data Sheet September 201075A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeatures Ultra Low On-ResistanceJEDEC TO-263AB- rDS(ON) = 0.014, VGS = 10V- rDS(ON) = 0.015, VGS = 5VDRAIN Simulation Models (FLANGE)- Temperature Compensated PSPICE and SABER Electrical ModelsGATE- Spice and SABER Thermal Imped

 7.1. Size:217K  fairchild semi
hufa76639p3 hufa76639s3s hufa76639s3st.pdf

HUFA76645S3STF085
HUFA76645S3STF085

HUFA76639P3, HUFA76639S3SData Sheet January 200250A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceSOURCE DRAIN- rDS(ON) = 0.026, VGS = 10VDRAIN (FLANGE)GATE- rDS(ON) = 0.027, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEl

 7.2. Size:214K  fairchild semi
hufa76619d3st hufa76619d3 hufa76619d3s.pdf

HUFA76645S3STF085
HUFA76645S3STF085

HUFA76619D3, HUFA76619D3SData Sheet January 200218A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAINDRAINSOURCE (FLANGE) (FLANGE)- rDS(ON) = 0.085, VGS = 10VDRAINGATE- rDS(ON) = 0.087, VGS = 5VGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE

 7.3. Size:202K  fairchild semi
hufa76629d3 hufa76629d3st.pdf

HUFA76645S3STF085
HUFA76645S3STF085

HUFA76629D3, HUFA76629D3SData Sheet January 200220A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAINSOURCE (FLANGE) - rDS(ON) = 0.052, VGS = 10VDRAIN- rDS(ON) = 0.054, VGS = 5VGATEGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and SABER Elect

 7.4. Size:208K  fairchild semi
hufa76609d3st hufa76609d3 hufa76609d3s.pdf

HUFA76645S3STF085
HUFA76645S3STF085

HUFA76609D3, HUFA76609D3SData Sheet January 200210A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-251AA JEDEC TO-252AA Ultra Low On-ResistanceDRAIN DRAIN- rDS(ON) = 0.160, VGS = 10VSOURCE (FLANGE) (FLANGE)DRAINGATE - rDS(ON) = 0.165, VGS = 5VGATE Simulation Models- Temperature Compensated PSPICE and SABER

 7.5. Size:217K  fairchild semi
hufa76633p3 hufa76633s3s hufa76633s3st.pdf

HUFA76645S3STF085
HUFA76645S3STF085

HUFA76633P3, HUFA76633S3SData Sheet January 200238A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceSOURCE DRAIN- rDS(ON) = 0.035, VGS = 10VDRAIN (FLANGE)GATE- rDS(ON) = 0.036, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEl

 7.6. Size:828K  cn vbsemi
hufa76609d3.pdf

HUFA76645S3STF085
HUFA76645S3STF085

HUFA76609D3www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.115 at VGS = 10 V15 100 % Rg Tested1000.120 at VGS = 6 V 15APPLICATIONS Primary Side SwitchTO-251DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwi

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