FDMB2307NZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDMB2307NZ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 VQgⓘ - Carga de la puerta: 20 nC
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0165 Ohm
Paquete / Cubierta: MLP2X3
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FDMB2307NZ Datasheet (PDF)
fdmb2307nz.pdf
April 2014FDMB2307NZDual Common Drain N-Channel PowerTrench MOSFET 20 V, 9.7 A, 16.5 mFeaturesGeneral Description Max rS1S2(on) = 16.5 m at VGS = 4.5 V, ID = 8 AThis device is designed specifically as a single package solution Max rS1S2(on) = 18 m at VGS = 4.2 V, ID = 7.4 A for Li-Ion battery pack protection circuit and other ultra-portable applications. It features t
fdmb2307nz.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdmb2308pz.pdf
April 2014FDMB2308PZDual Common Drain P-Channel PowerTrench MOSFET -20 V, -7 A, 36 mFeaturesGeneral Description Max rS1S2(on) = 36 m at VGS = -4.5 V, ID = -5.7 AThis device is designed specifically as a single package solution Max rS1S2(on) = 50 m at VGS = -2.5 V, ID = -4.6 A for Li-Ion battery pack protection circuit and other ultra-portable applications. It features
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918