FDMB2307NZ Todos los transistores

 

FDMB2307NZ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMB2307NZ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0165 Ohm

Encapsulados: MLP2X3

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FDMB2307NZ datasheet

 ..1. Size:329K  fairchild semi
fdmb2307nz.pdf pdf_icon

FDMB2307NZ

April 2014 FDMB2307NZ Dual Common Drain N-Channel PowerTrench MOSFET 20 V, 9.7 A, 16.5 m Features General Description Max rS1S2(on) = 16.5 m at VGS = 4.5 V, ID = 8 A This device is designed specifically as a single package solution Max rS1S2(on) = 18 m at VGS = 4.2 V, ID = 7.4 A for Li-Ion battery pack protection circuit and other ultra-portable applications. It features t

 ..2. Size:437K  onsemi
fdmb2307nz.pdf pdf_icon

FDMB2307NZ

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.1. Size:322K  fairchild semi
fdmb2308pz.pdf pdf_icon

FDMB2307NZ

April 2014 FDMB2308PZ Dual Common Drain P-Channel PowerTrench MOSFET -20 V, -7 A, 36 m Features General Description Max rS1S2(on) = 36 m at VGS = -4.5 V, ID = -5.7 A This device is designed specifically as a single package solution Max rS1S2(on) = 50 m at VGS = -2.5 V, ID = -4.6 A for Li-Ion battery pack protection circuit and other ultra-portable applications. It features

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