FDMB2307NZ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDMB2307NZ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0165 Ohm
Encapsulados: MLP2X3
Búsqueda de reemplazo de FDMB2307NZ MOSFET
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FDMB2307NZ datasheet
fdmb2307nz.pdf
April 2014 FDMB2307NZ Dual Common Drain N-Channel PowerTrench MOSFET 20 V, 9.7 A, 16.5 m Features General Description Max rS1S2(on) = 16.5 m at VGS = 4.5 V, ID = 8 A This device is designed specifically as a single package solution Max rS1S2(on) = 18 m at VGS = 4.2 V, ID = 7.4 A for Li-Ion battery pack protection circuit and other ultra-portable applications. It features t
fdmb2307nz.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdmb2308pz.pdf
April 2014 FDMB2308PZ Dual Common Drain P-Channel PowerTrench MOSFET -20 V, -7 A, 36 m Features General Description Max rS1S2(on) = 36 m at VGS = -4.5 V, ID = -5.7 A This device is designed specifically as a single package solution Max rS1S2(on) = 50 m at VGS = -2.5 V, ID = -4.6 A for Li-Ion battery pack protection circuit and other ultra-portable applications. It features
Otros transistores... HUFA76413DK8TF085 , HUFA76419D3S , HUFA76429D3 , HUFA76429D3STF085 , HUFA76645S3STF085 , FDMS8018 , MTP3055VL , NDC7001C , CS150N03A8 , NDS331N , RFD14N05SM9A , SI3443DV , SI4532DY , FDMA905P , FDME905PT , SI4542DY , FDC8886 .
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