NDS331N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NDS331N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 1.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 85 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
   Paquete / Cubierta: SSOT3

Búsqueda de reemplazo de MOSFET NDS331N

NDS331N Datasheet (PDF)

..1. Size:63K fairchild semi
nds331n.pdf

July 1996 NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel logic level enhancement mode power field 1.3 A, 20 V. RDS(ON) = 0.21 @ VGS= 2.7 Veffect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.16 @ VGS= 4.5 V.high cell density, DMOS technology. This very high densityprocess is especia

0.1. Size:877K cn vbsemi
nds331n-nl.pdf

NDS331N-NLwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Con

9.1. Size:62K fairchild semi
nds336p.pdf

June 1997 NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesSuperSOTTM-3 P-Channel logic level enhancement mode power -1.2 A, -20 V, RDS(ON) = 0.27 @ VGS= -2.7 Vfield effect transistors are produced using Fairchild'sRDS(ON) = 0.2 @ VGS = -4.5 V.proprietary, high cell density, DMOS technology. This very highVery low level

9.2. Size:62K fairchild semi
nds335n.pdf

July 1996 NDS335N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesThese N -Channel logic level enhancement mode power field1.7 A, 20 V. RDS(ON) = 0.14 @ VGS= 2.7 Veffect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.11 @ VGS= 4.5 V.high cell density, DMOS technology. This very high densityprocess is espec

9.3. Size:84K fairchild semi
nds332p.pdf

June 1997 NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features-1 A, -20 V, RDS(ON) = 0.41 @ VGS= -2.7 VThese P-Channel logic level enhancement mode power fieldeffect transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.3 @ VGS = -4.5 V.cell density, DMOS technology. This very high density process isVery

9.4. Size:851K cn vbsemi
nds336p.pdf

NDS336Pwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

9.5. Size:869K cn vbsemi
nds332p-nl.pdf

NDS332P-NLwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

Otros transistores... HUFA76419D3S , HUFA76429D3 , HUFA76429D3STF085 , HUFA76645S3STF085 , FDMS8018 , MTP3055VL , NDC7001C , FDMB2307NZ , 13N50 , RFD14N05SM9A , SI3443DV , SI4532DY , FDMA905P , FDME905PT , SI4542DY , FDC8886 , FCP190N60 .

Liste

Recientemente añadidas las descripciónes de los transistores: