FDC8886 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDC8886
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.6 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
Encapsulados: SSOT6
Búsqueda de reemplazo de FDC8886 MOSFET
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FDC8886 datasheet
fdc8886.pdf
January 2012 FDC8886 N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 36 m at VGS = 4.5 V, ID = 6.0 A been optimized for rDS(on) switching performance. High performance trench te
fdc8886.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdc8884.pdf
January 2012 FDC8884 N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 30 m at VGS = 4.5 V, ID = 6.0 A been optimized for rDS(on) switching performance. High performance trench te
fdc8884.pdf
FDC8884 www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.030 at VGS = 10 V 6 Low On-Resistance 30 4.2 nC 0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 APPLICATIONS DC/DC C
Otros transistores... FDMB2307NZ, NDS331N, RFD14N05SM9A, SI3443DV, SI4532DY, FDMA905P, FDME905PT, SI4542DY, 4N60, FCP190N60, SSN1N45B, DMG1012T, DMG1012UW, DMG1024UV, DMG2302U, DMG3414U, DMG3420U
History: TSM4946DCS
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