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DMG1012UW MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMG1012UW
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.29 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 6 V
   |Id|ⓘ - Corriente continua de drenaje: 1 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 0.7366 nC
   Cossⓘ - Capacitancia de salida: 61 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
   Paquete / Cubierta: SOT323

 Búsqueda de reemplazo de MOSFET DMG1012UW

 

DMG1012UW Datasheet (PDF)

 ..1. Size:152K  diodes
dmg1012uw.pdf

DMG1012UW
DMG1012UW

DMG1012UWN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-323 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020

 7.1. Size:140K  diodes
dmg1012t.pdf

DMG1012UW
DMG1012UW

DMG1012TN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-523 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020

 7.2. Size:1598K  cn tech public
dmg1012t.pdf

DMG1012UW
DMG1012UW

 8.1. Size:206K  diodes
dmg1016udw.pdf

DMG1012UW
DMG1012UW

DMG1016UDWCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-363 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per

 8.2. Size:281K  diodes
dmg1013uwq.pdf

DMG1012UW
DMG1012UW

DMG1013UWQ P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT323 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminal Connections: See D

 8.3. Size:142K  diodes
dmg1013t.pdf

DMG1012UW
DMG1012UW

DMG1013TP-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-523 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020

 8.4. Size:133K  diodes
dmg1013uw.pdf

DMG1012UW
DMG1012UW

DMG1013UWP-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-323 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020

 8.5. Size:200K  diodes
dmg1016v.pdf

DMG1012UW
DMG1012UW

DMG1016VCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case: SOT-563 Low Gate Threshold Voltage VGS(th)

 8.6. Size:1145K  kexin
dmg1013t.pdf

DMG1012UW
DMG1012UW

SMD Type MOSFETP-Channel MOSFETDMG1013T (KMG1013T)SOT-523 Unit:mm+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 VDS (V) =-20V ID =-0.46 A RDS(ON) 0.7 (VGS =-4.5V)3 RDS(ON) 0.9 (VGS =-2.5V)0.30.05 RDS(ON) 1.3 (VGS =-1.8V)+0.10.5-0.1 ESD Protected Up To 3KV1.Gate2.Source3.DrainDrain

 8.7. Size:841K  cn vbsemi
dmg1013uw-7.pdf

DMG1012UW
DMG1012UW

DMG1013UW-7www.VBsemi.twP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET4.3 nC- 200.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC Conv

 8.8. Size:1597K  cn tech public
dmg1013t.pdf

DMG1012UW
DMG1012UW

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