JMSH040SAGQ Datasheet. Equivalente

 ..1. Size:326K  jiejie micro
 jmsh040sagq.pdf

JMSH040SAGQ 40V 0.56m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 40 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 400 A RDS(ON)_Typ (@ VGS = 10V) 0.56 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications PDFN5x6-

 4.1. Size:325K  jiejie micro
 jmsh040sag.pdf

JMSH040SAG 40V 0.56m N-Ch Power MOSFET Features Product Summary Ultra-low RDS(ON) Parameter Value Unit Low Gate Charge VDS 40 V VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 384 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 0.56 m Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, IE 4.0, Co

 6.1. Size:632K  jiejie micro
 jmsh040sptsq.pdf

40V, 430A, 0.85m N-channel Power SGT MOSFET JMSH040SPTSQ Product Summary Features Ultra-low ON-resistance RDS(ON) Parameters Value Unit Low Gate Charge VDSS 40 V 100% UIS Tested VGS(th)_Typ 2.6 V 100% Vds Tested ID(@VGS=10V) 430 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 0.85 m AEC-Q101 Qualified Applications Load Switch PWM Appl

 6.2. Size:1281K  jiejie micro
 jmsh040spg.pdf

40V, 324A, 0.7m N-channel Power SGT MOSFET JMSH040SPG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit VDSS 40 V 100% UIS Tested VGS(th)_Typ 3.1 V 100% Vds Tested ID(@VGS=10V) 324 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 0.7 mW Applications Load Switch PWM Application Power Management D G S PDFN5

 6.3. Size:1284K  jiejie micro
 jmsh040spgq.pdf

40V, 342A, 0.7m N-channel Power SGT MOSFET JMSH040SPGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 40 V 100% UIS Tested VGS(th)_Typ 3.1 V 100% Vds Tested ID(@VGS=10V) 342 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 0.7 mW AEC-Q101 Qualified Applications Load Switch PWM Applica