JMSH0801PTL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JMSH0801PTL 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 357 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 383 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 54 nS
Cossⓘ - Capacitancia de salida: 4421 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0015 Ohm
Encapsulados: TOLL
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JMSH0801PTL datasheet
..1. Size:1262K jiejie micro
jmsh0801ptl.pdf 
80V, 383A, 1.1m N-channel Power SGT MOSFET JMSH0801PTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 383 A RDS(ON)_Typ(@VGS=10V 1.1 mW Applications Load Switch PWM Application Power Management PowerJE 10x1
5.1. Size:1250K jiejie micro
jmsh0801pe.pdf
80V, 313A, 1.5m N-channel Power SGT MOSFET JMSH0801PE Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 313 A RDS(ON)_Typ(@VGS=10V 1.5 mW Applications Load Switch PWM Application Power Management TO-263 -3L S
7.1. Size:350K jiejie micro
jmsh0803ngs.pdf
JMSH0803NGS 80V 3.2m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 80 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 153 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.2 m Halogen-free and RoHS-compliant Applications Power Management in Telecom., Industrial Au
7.2. Size:379K jiejie micro
jmsh0805pc jmsh0805pe.pdf
JMSH0805PC JMSH0805PE 80V 4.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 80 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 154 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 4.0 m Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-v
7.3. Size:388K jiejie micro
jmsh0805pk.pdf
JMSH0805PK 80V 3.7m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 80 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 130 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.7 m Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-vehicle, Robo
7.4. Size:557K jiejie micro
jmsh0803ags.pdf
JMSH0803AGS 80V 3.2mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 80 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 153 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.2 mW Halogen-free and RoHS-compliant Applications Power Management in Telecom., Industrial Automa
7.5. Size:1252K jiejie micro
jmsh0802pe.pdf
80V, 263A, 1.6m N-channel Power SGT MOSFET JMSH0802PE Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 263 A RDS(ON)_Typ(@VGS=10V 1.6 mW Applications Load Switch PWM Application Power Management TO-263 -3L S
7.6. Size:1271K jiejie micro
jmsh0802mc.pdf
80V, 249A, 2.0m N-channel Power SGT MOSFET JMSH0802MC Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 3.1 V Halogen-free; RoHS-compliant ID(@VGS=10V) 249 A RDS(ON)_Typ(@VGS=10V 2.0 mW Applications Load Switch PWM Application Power Management D G S TO-22
7.7. Size:1243K jiejie micro
jmsh0803mc.pdf
80V, 165A, 3.0m N-channel Power SGT MOSFET JMSH0803MC Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 165 A RDS(ON)_Typ(@VGS=10V 3.0 mW Applications Load Switch PWM Application Power Management D G S TO-22
7.8. Size:1256K jiejie micro
jmsh0804nc.pdf
80V, 148A, 3.8m N-channel Power SGT MOSFET JMSH0804NC Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 148 A RDS(ON)_Typ(@VGS=10V 3.8 mW Applications Load Switch PWM Application Power Management D G S Sche
7.9. Size:349K jiejie micro
jmsh0804ng.pdf
JMSH0804NG 85V 3.1m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 85 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 137 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.1 m Halogen-free and RoHS-compliant Applications Power Management in Telecom., Industrial Aut
7.10. Size:1609K jiejie micro
jmsh0802me.pdf
80V, 254A, 1.8m N-channel Power SGT MOSFET JMSH0802ME Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 254 A RDS(ON)_Typ(@VGS=10V 1.8 mW Applications Load Switch PWM Application Power Management D G S TO-2
7.11. Size:1261K jiejie micro
jmsh0802ptl.pdf
80V, 333A, 1.3m N-channel Power SGT MOSFET JMSH0802PTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 333 A RDS(ON)_Typ(@VGS=10V 1.3 mW Applications Load Switch PWM Application Power Management PowerJE 10x1
7.12. Size:1350K jiejie micro
jmsh0803me.pdf
80V, 206A, 2.7m N-channel Power SGT MOSFET JMSH0803ME Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 206 A RDS(ON)_Typ(@VGS=10V 2.7 mW Applications Load Switch PWM Application Power Management D G S TO-2
7.13. Size:1129K jiejie micro
jmsh0802mtl.pdf
80V, 285A, 1.4m N-channel Power SGT MOSFET JMSH0802MTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 80 V 100% Vds TESTED VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 285 A Pb-free plating RDS(ON)_Typ(@VGS=10V 1.4 mW Applications Load Switch PWM Application Power Mana
7.14. Size:1258K jiejie micro
jmsh0803mtl.pdf
80V, 253A, 2.1 m N-channel Power SGT MOSFET JMSH0803MTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 3.1 V Halogen-free; RoHS-compliant ID(@VGS=10V) 253 A RDS(ON)_Typ(@VGS=10V 2.1 mW Applications Load Switch PWM Application Power Management PowerJE 10x
7.15. Size:1275K jiejie micro
jmsh0803pc.pdf
80V, 202A, 2.4m N-channel Power SGT MOSFET JMSH0803PC Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 202 A RDS(ON)_Typ(@VGS=10V 2.4 mW Applications Load Switch PWM Application Power Management TO-220-3L Sch
7.16. Size:1291K jiejie micro
jmsh0803mg.pdf
80V, 162A, 2.5m N-channel Power SGT MOSFET JMSH0803MG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 80 V 100% Vds TESTED VGS(th)_Typ 3.1 V Halogen-free; RoHS-compliant ID(@VGS=10V) 162 A Pb-free plating RDS(ON)_Typ(@VGS=10V 2.5 mW Applications Load Switch PWM Application Power Manag
7.17. Size:390K jiejie micro
jmsh0804nk.pdf
JMSH0804NK 85V 3.3m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 85 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 112 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.3 m Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-vehicle, Robo
7.18. Size:549K jiejie micro
jmsh0805pg.pdf
JMSH0805PG 80V 4.5mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 80 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 117 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 4.5 mW Halogen-free and RoHS-compliant Applications Power Management in Telecom., Industrial Automat
7.19. Size:1338K jiejie micro
jmsh0804ne.pdf
80V, 164A, 3.3m N-channel Power SGT MOSFET JMSH0804NE Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 3.4 V Halogen-free; RoHS-compliant ID(@VGS=10V) 164 A RDS(ON)_Typ(@VGS=10V 3.3 mW Applications Load Switch PWM Application Power Management D G S Sche
Otros transistores... JMSH040SAGQ, JMSH040SPG, JMSH040SPGQ, JMSH040SPTSQ, JMSH0702PE, JMSH0704PC, JMSH0704PE, JMSH0801PE, IRFP260, JMSH0802MC, JMSH0802ME, JMSH0802MTL, JMSH0802PE, JMSH0802PTL, JMSH1101PC, JMSH1101PE, JMSH1101PE7
