JMSH1002TE Datasheet. Equivalente

 ..1. Size:1077K  jiejie micro
 jmsh1002tc jmsh1002te.pdf

JMSH1002TC JMSH1002TE 100V 2.1mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 2.9 V 100% UIS Tested, 100% R 100% UIS Tested, 100% Rgg Tested Tested ID (@ VGS = 10V) (1) 193 A Pb-free Lead Plating Pb-free Lead Plating RDS(ON)_Typ (@ VGS

 5.1. Size:1261K  jiejie micro
 jmsh1002ttl.pdf

100V, 280A, 1.6m N-channel Power SGT MOSFET JMSH1002TTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 280 A RDS(ON)_Typ(@VGS=10V 1.6 mW Applications Load Switch PWM Application Power Management PowerJE 10

 6.1. Size:1251K  jiejie micro
 jmsh1002ytl.pdf

100V, 215A, 2.3m N-channel Power SGT MOSFET JMSH1002YTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 215 A Pb-free plating RDS(ON)_Typ(@VGS=10V 2.3 mW Applications Load Switch PWM Application Power Ma

 6.2. Size:339K  jiejie micro
 jmsh1002aeq.pdf

JMSH1002AEQ 100V 1.6m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 350 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.6 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

 6.3. Size:396K  jiejie micro
 jmsh1002nc jmsh1002ne.pdf

JMSH1002NC JMSH1002NE 100V 2.2m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 284 A RDS(ON) (@ VGS = 10V) 2.2 m Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-vehicl

 6.4. Size:657K  jiejie micro
 jmsh1002ac jmsh1002ae.pdf

JMSH1002AC JMSH1002AE 100V 1.6mW N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 271 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.6 mW Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Ind

 6.5. Size:1202K  jiejie micro
 jmsh1002ns.pdf

100V, 274A, 3.2m N-channel Power SGT MOSFET JMSH1002NS Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 2.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 274 A Pb-free plating RDS(ON)_Typ(@VGS=10V 3.2 mW Applications Load Switch PWM Application Power Man

 6.6. Size:341K  jiejie micro
 jmsh1002bc jmsh1002be.pdf

JMSH1002BC JMSH1002BE 100V 2.1m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 258 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 2.1 m Halogen-free and RoHS-compliant Applications Power Management in Telecom., I

 6.7. Size:1155K  jiejie micro
 jmsh1002re.pdf

100V, 241A, 2.2m N-channel Power SGT MOSFET JMSH1002RE Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 100 V 100% Vds TESTED VGS(th)_Typ 3.2 V Halogen-free; RoHS-compliant ID(@VGS=10V) 241 A Pb-free plating RDS(ON)_Typ(@VGS=10V) 2.2 mW Applications Load Switch PWM Application Power Mana

 6.8. Size:623K  jiejie micro
 jmsh1002as.pdf

JMSH1002AS 100V 1.7mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 314 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.7 mW Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Indus

 6.9. Size:355K  jiejie micro
 jmsh1002asq.pdf

JMSH1002ASQ 100V 1.8m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 333 A RDS(ON)_Typ (@ VGS = 10V) 1.8 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Application

 6.10. Size:1075K  jiejie micro
 jmsh1002yc jmsh1002ye.pdf

JMSH1002YC JMSH1002YE 100V 3.1mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.2 V 100% UIS Tested, 100% R 100% UIS Tested, 100% Rgg Tested Tested ID (@ VGS = 10V) (1) 175 A Pb-free Lead Plating Pb-free Lead Plating RDS(ON)_Typ (@ VGS

 6.11. Size:367K  jiejie micro
 jmsh1002ntl.pdf

JMSH1002NTL 100V 2.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 337 A RDS(ON) (@ VGS = 10V) 2.0 m Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-vehicle, Robotics