JMSH0406PKQ Datasheet. Equivalente

 ..1. Size:1252K  jiejie micro
 jmsh0406pkq.pdf

40V, 66A, 4.8m N-channel Power SGT MOSFET JMSH0406PKQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 40 V 100% UIS Tested VGS(th)_Typ 3.0 V 100% Vds Tested ID(@VGS=10V) 66 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 4.8 mW AEC-Q101 Qualified Applications Load Switch PWM Applicat

 4.1. Size:1129K  jiejie micro
 jmsh0406pk.pdf

40V, 64A, 4.6m N-channel Power SGT MOSFET JMSH0406PK Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 64 A RDS(ON)_Typ(@VGS=10V 4.6 mW Applications Load Switch PWM Application Power Management D G S TO-252-

 5.1. Size:1235K  jiejie micro
 jmsh0406pu.pdf

40V, 54A, 4.1m N-channel Power SGT MOSFET JMSH0406PU Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 2.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 54 A Pb-free plating RDS(ON)_Typ(@VGS=10V 4.1 mW Applications Load Switch PWM Application Power Managem

 5.2. Size:1174K  jiejie micro
 jmsh0406pgdq.pdf

40V, 51A, 5.1m Dual N-channel Power SGT MOSFET JMSH0406PGDQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 40 V 100% UIS Tested VGS(th)_Typ 2.8 V 100% Vds Tested ID(@VGS=10V) 51 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 5.1 mW AEC-Q101 Qualified Applications Load Switch PWM Appli

 5.3. Size:1236K  jiejie micro
 jmsh0406pg.pdf

40V, 103A, 3.9m N-channel Power SGT MOSFET JMSH0406PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 2.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 103 A RDS(ON)_Typ(@VGS=10V 3.9 mW Applications Load Switch PWM Application Power Management D G S PDFN

 5.4. Size:1304K  jiejie micro
 jmsh0406pgd.pdf

40V, 50A, 4.9m N-channel Power SGT MOSFET JMSH0406PGD Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 2.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 50 A RDS(ON)_Typ(@VGS=10V 4.9 mW Applications Load Switch PWM Application Power Management PDFN5X6-8L-D S

 5.5. Size:1229K  jiejie micro
 jmsh0406pgq.pdf

40V, 106A, 4.1m N-channel Power SGT MOSFET JMSH0406PGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 40 V 100% UIS Tested VGS(th)_Typ 3.1 V 100% Vds Tested ID(@VGS=10V) 106 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 4.1 mW AEC-Q101 Qualified Applications Load Switch PWM Applica

 5.6. Size:1236K  jiejie micro
 jmsh0406puq.pdf

40V, 57A, 4.1m N-channel Power SGT MOSFET JMSH0406PUQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 40 V 100% UIS Tested VGS(th)_Typ 2.8 V 100% Vds Tested ID(@VGS=10V) 57 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 4.1 mW AEC-Q101 Qualified Pb-free plating Applications Load Swit