JMSH1005PG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

100V, 110A, 4.8m N-channel Power SGT MOSFETJMSH1005PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 110 ARDS(ON)_Typ(@VGS=10V 4.8 mWApplications Load Switch PWM Application Power ManagementDG SPD

JMSH1005PCJMSH1005PE100V 4.0m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 132 A RDS(ON) (@ VGS = 10V)4.0 m Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Motor Driving in Power Tool, E-vehicl

100V, 467A, 1.0m N-channel Power SGT MOSFETJMSH1001MTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 467 ARDS(ON)_Typ(@VGS=10V 1.0 mWApplications Load Switch PWM Application Power ManagementPowerJE10

JMSH1008PG100V 6.5mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS100 V Low Gate Charge Low Gate Charge VGS(th)_Typ3.0 V 100% UIS Tested, 100% RggTested 100% UIS Tested, 100% R Tested ID (@ VGS = 10V) (1) 80 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)6.5 Pb-free Lead Plating

JMSH1006ACJMSH1006AE100V 5.2m N-Ch Power MOSFETProduct SummaryFeaturesParameter Typ. Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 114 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)5.2 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., I

JMSH1008PCJMSH1008PE100V 6.3mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% R 100% UIS Tested, 100% Rgg Tested Tested ID (@ VGS = 10V) (1) 113 A Pb-free Lead Plating Pb-free Lead Plating RDS(ON)_Typ (@ VGS

100V, 215A, 2.3m N-channel Power SGT MOSFETJMSH1002YTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 215 A Pb-free platingRDS(ON)_Typ(@VGS=10V 2.3 mWApplications Load Switch PWM Application Power Ma

100V, 120A, 4.5m N-channel Power SGT MOSFETJMSH1004MCProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 117 ARDS(ON)_Typ(@VGS=10V 4.5 mWApplications Load Switch PWM Application Power ManagementDG STO

100V, 90A, 5.0m N-channel Power SGT MOSFETJMSH1006PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 90 ARDS(ON)_Typ(@VGS=10V 5.0 mWApplications Load Switch PWM Application Power ManagementDG SPDFN5

100V, 184A, 3.5m N-channel Power SGT MOSFETJMSH1003TTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 184 ARDS(ON)_Typ(@VGS=10V 3.5 mWApplications Load Switch PWM Application Power ManagementPowerJE10

100V, 61A, 5.9m N-channel Power SGT MOSFETJMSH1006PKProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 3.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 61 ARDS(ON)_Typ(@VGS=10V 5.9 mWApplications Load Switch PWM Application Power ManagementDG SSche

100V, 167A, 3.1m N-channel Power SGT MOSFETJMSH1003NE7Product SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 3.1 V Halogen-free; RoHS-compliantID(@VGS=10V) 167 ARDS(ON)_Typ(@VGS=10V 3.1 mWApplications Load Switch PWM Application Power ManagementTO-263-7L

100V, 312A, 1.7m N-channel Power SGT MOSFETJMSH1001NTLQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)ParametersValue Unit Low Gate ChargeVDSS 100 V 100% UIS TestedVGS(th)_Typ 2.9 V 100% Vds TestedID(@VGS=10V) 312 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 1.7 mW AEC-Q101 QualifiedApplications Load Switch PWM Appli

100V, 367A, 1.2m N-channel Power SGT MOSFETJMSH1001PTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 2.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 367 ARDS(ON)_Typ(@VGS=10V 1.2 mWApplications Load Switch PWM Application Power ManagementPowerJE10

JMSH1002AEQ100V 1.6m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 350 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.6 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

100V, 90A, 7.4m N-channel Power SGT MOSFETJMSH1008PGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)ParametersValue Unit Low Gate ChargeVDSS 100 V 100% UIS TestedVGS(th)_Typ 3.1 V 100% Vds TestedID(@VGS=10V) 90 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 7.4 mW AEC-Q101 QualifiedApplications Load Switch PWM Applicat

JMSH1004BGQ100V 3.3m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 138 A RDS(ON)_Typ (@ VGS = 10V)3.3 m Pb-free Lead Plating Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Application

100V, 80A, 4.4m N-channel Power SGT MOSFETJMSH1003TFProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 80 ARDS(ON)_Typ(@VGS=10V 4.4 mWApplications Load Switch PWM Application Power ManagementDG STO-22

JMSH1004NG100V 4.0m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 121 A RDS(ON) (@ VGS = 10V)4.0 m Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Motor Driving in Power Tool, E-vehicle, Robotics

JMSH1004NCJMSH1004NE100V 4.1m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 143 A RDS(ON) (@ VGS = 10V)4.1 m Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Motor Driving in Power Tool, E-vehicl

100V, 400A, 1.4m N-channel Power SGT MOSFETJMSH1001NTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 2.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 400 ARDS(ON)_Typ(@VGS=10V 1.4 mWApplications Load Switch PWM Application Power ManagementPowerJE10

JMSH1002TCJMSH1002TE100V 2.1mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 2.9 V 100% UIS Tested, 100% R 100% UIS Tested, 100% Rgg Tested Tested ID (@ VGS = 10V) (1) 193 A Pb-free Lead Plating Pb-free Lead Plating RDS(ON)_Typ (@ VGS

JMSH1002NCJMSH1002NE100V 2.2m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 284 A RDS(ON) (@ VGS = 10V)2.2 m Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Motor Driving in Power Tool, E-vehicl

100V, 116A, 5.7m N-channel Power SGT MOSFETJMSH1006PEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 100 V 100% Vds TESTEDVGS(th)_Typ 3.2 V Halogen-free; RoHS-compliantID(@VGS=10V) 116 A Pb-free platingRDS(ON)_Typ(@VGS=10V 5.7 mWApplications Load Switch PWM Application Power Man

JMSH1001ATLQ100V 1.3mW TOLL N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 479 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.3 mW Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applicat

JMSH1008AGQ100V 6.2m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 87 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 6.2 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

JMSH1006AG100V 5.3m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 102 A RDS(ON)_Typ (@ VGS = 10V)5.3 Pb-free Lead Plating m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial

JMSH1003ATLQ100V 2.7m TOLL N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 228 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)2.7 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Ap

JMSH1003AGQ100V 2.8m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 170 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 2.8 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

JMSH1002ACJMSH1002AE100V 1.6mW N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 271 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.6 mW Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Ind

JMSH1004ACJMSH1004AE100V 3.0mW N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 190 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V) 3.0 mW Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial Aut

100V, 274A, 3.2m N-channel Power SGT MOSFETJMSH1002NSProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 2.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 274 A Pb-free platingRDS(ON)_Typ(@VGS=10V 3.2 mWApplications Load Switch PWM Application Power Man

100V, 300A, 1.4m N-channel Power SGT MOSFETJMSH1001NE7Product SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 300 ARDS(ON)_Typ(@VGS=10V 1.4 mWApplications Load Switch PWM Application Power ManagementTO-263 -7L

JMSH1003AE7Q100V 2.8m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 196 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 2.8 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Application

JMSH1001ATL100V 1.3m TOLL N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 411 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.3 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Indust

JMSH1002BCJMSH1002BE100V 2.1m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 258 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)2.1 m Halogen-free and RoHS-compliantApplications Power Management in Telecom., I

100V, 116A, 6.0m N-channel Power SGT MOSFETJMSH1006PCProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TESTEDVDSS 100 V 100% Vds TESTEDVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 116 A Pb-free platingRDS(ON)_Typ(@VGS=10V 6.0 mWApplications Load Switch PWM Application Power Mana

100V, 241A, 2.2m N-channel Power SGT MOSFETJMSH1002REProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TESTEDVDSS 100 V 100% Vds TESTEDVGS(th)_Typ 3.2 V Halogen-free; RoHS-compliantID(@VGS=10V) 241 A Pb-free plating RDS(ON)_Typ(@VGS=10V) 2.2 mWApplications Load Switch PWM Application Power Mana

JMSH1003ATL100V 2.7m TOLL N-Ch Power MOSFETProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)Parameter Value Unit VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 228 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)2.7 m Halogen-free and RoHS-compliantApplications Power Management in Compu

100V, 101A, 5.6m N-channel Power SGT MOSFETJMSH1006PGSProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 3.2 V Halogen-free; RoHS-compliantID(@VGS=10V) 101 ARDS(ON)_Typ(@VGS=10V 5.6 mWApplications Load Switch PWM Application Power ManagementDG SPD

JMSH1002AS100V 1.7mW N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 314 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.7 mW Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Indus

JMSH1001NCJMSH1001NE100V 1.6m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 353 A RDS(ON)_Typ (@ VGS = 10V)1.6 m Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Motor Driving in Power Tool,

JMSH1003NCJMSH1003NE100V 3.0mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 213 A RDS(ON) (@ VGS = 10V)3.0 Halogen-free and RoHS-compliant mWApplications Motor Driving in Power Tool, E-vehicle, Robotics Current Switc

JMSH1003AGWQ100V 2.8m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)2.9 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 178 A Wettable Flanks design support high manufacturability and RDS(ON) (@ VGS = 10V)2.8 mAutomated Optical Inspection (AOI) Pb-free Lead Plat

JMSH1003TCJMSH1003TE100V 3.0mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS100 V Low Gate Charge Low Gate Charge VGS(th)_Typ3.2 V 100% UIS Tested, 100% RggTested 100% UIS Tested, 100% R Tested ID (@ VGS = 10V) (1) 223 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)3 Pb-free L

JMSH1003NG100V 3.1m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 159 A RDS(ON)_Typ (@ VGS = 10V)3.1 m Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Power Management in Telecom., Industrial

JMSH1008ACJMSH1008AE100V 6.8mW N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% R Testedg ID (@ VGS = 10V) (1) 112 A RDS(ON)_Typ (@ VGS = 10V) 6.8 mW Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Indu

JMSH1008AKQ100V 6.9m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 92 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)6.9 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

100V, 117A, 4.6m N-channel Power SGT MOSFETJMSH1004RGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 117 ARDS(ON)_Typ(@VGS=10V 4.6 mWApplications Load Switch PWM Application Power ManagementDG SPD

JMSH1001BTL100V 1.7m TOLL N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 300 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.7 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Indus

JMSH1006AK100V 5.5m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 90 A Pb-Free Lead Plating RDS(ON)_Typ (@ VGS = 10V)5.5 m RoHS and Halogen-Free CompliantApplications Power Managerment in Telecom., Industrial Au

100V, 56A, 6.3m N-channel Power SGT MOSFETJMSH1008PKProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 56 ARDS(ON)_Typ(@VGS=10V 6.3 mWApplications Load Switch PWM Application Power ManagementDG STO-2

JMSH1003AG100V 2.8m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 144 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)2.8 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial A

JMSH1004BEQ100V 3.5m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 160 A RDS(ON)_Typ (@ VGS = 10V)3.5 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applicati

JMSH1004BCJMSH1004BE100V 3.7mW N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 134 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 3.7 mW Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE

JMSH1001AE7100V 1.6m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 290 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.6 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial

JMSH1002ASQ100V 1.8m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 333 A RDS(ON)_Typ (@ VGS = 10V)1.8 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Application

JMSH1004AEQ100V 3.0mW N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 216 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 3.0 mW Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications TO-2

JMSH1001NS100V 1.9m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 308 A RDS(ON)_Typ (@ VGS = 10V)1.9 m Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Motor Driving in Power Tool, E-vehicle, R

JMSH1002YCJMSH1002YE100V 3.1mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.2 V 100% UIS Tested, 100% R 100% UIS Tested, 100% Rgg Tested Tested ID (@ VGS = 10V) (1) 175 A Pb-free Lead Plating Pb-free Lead Plating RDS(ON)_Typ (@ VGS

100V, 280A, 1.6m N-channel Power SGT MOSFETJMSH1002TTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 280 ARDS(ON)_Typ(@VGS=10V 1.6 mWApplications Load Switch PWM Application Power ManagementPowerJE10

JMSH1004BG100V 3.3mW N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 112 A RDS(ON)_Typ (@ VGS = 10V)3.3 mW Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial Auto

JMSH1001AE7Q100V 1.6m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 350 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.6 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applica

JMSH1002NTL100V 2.0m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 337 A RDS(ON) (@ VGS = 10V)2.0 m Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Motor Driving in Power Tool, E-vehicle, Robotics

JMSH1008AG100V 6.2m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 92 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 6.2 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial Automation

JMSH1004BGWQ100V 3.6m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)2.9 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 152 A Wettable Flanks design support high manufacturability and RDS(ON) (@ VGS = 10V)3.6 mAutomated Optical Inspection (AOI) Pb-free Lead Plat