DMN2005LP4K Todos los transistores

 

DMN2005LP4K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMN2005LP4K

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.2 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 0.2 A

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 41 pF

Resistencia drenaje-fuente RDS(on): 1.5 Ohm

Empaquetado / Estuche: X2DFN10063

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DMN2005LP4K Datasheet (PDF)

1.1. dmn2005lpk.pdf Size:162K _diodes

DMN2005LP4K
DMN2005LP4K

DMN2005LPK N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: DFN1006-3 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminal Connections: See Diagram Ultra-Sm

1.2. dmn2005lp4k.pdf Size:166K _diodes

DMN2005LP4K
DMN2005LP4K

DMN2005LP4K N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: DFN1006H4-3 Very Low Gate Threshold Voltage, 0.9V Max. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminal Connections: See D

 3.1. dmn2005ufg.pdf Size:334K _diodes

DMN2005LP4K
DMN2005LP4K

DMN2005UFG 20V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary Features and Benefits • Low RDS(ON) – ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max TA = 25°C (t<10s) • Small form factor thermally efficient package enables higher density end products 4.6mΩ @ VGS = 4.5V 24.1A 20V • Occupies just 33% of the board area occupied by SO-8 e

3.2. dmn2005k.pdf Size:239K _diodes

DMN2005LP4K
DMN2005LP4K

DMN2005K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-23 Very Low Gate Threshold Voltage, 0.9V Max. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020C Low Input/Output Leakage Terminal Connecti

 3.3. dmn2005dlp4k.pdf Size:178K _diodes

DMN2005LP4K
DMN2005LP4K

DMN2005DLP4K DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case: DFN1310H4-6 Very Low Gate Threshold Voltage, 0.9V Max. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivit

Otros transistores... DMN2004DMK , DMN2004DWK , DMN2004K , DMN2004TK , DMN2004VK , DMN2004WK , DMN2005DLP4K , DMN2005K , BUZ90A , DMN2005LPK , DMN2009LSS , DMN2016UTS , DMN2020LSN , DMN2027LK3 , DMN2027USS , DMN2028USS , DMN2040LTS .

 

 
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