JMSL1010AC Datasheet. Equivalente

 ..1. Size:323K  jiejie micro
 jmsl1010ac.pdf

JMSL1010AC 100V 7.9m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.9 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 72 A RDS(ON)_Typ (@ VGS = 10V) 7.9 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 10.4 m Halogen-free and RoHS-compliant Applicati

 5.1. Size:402K  jiejie micro
 jmsl1010agq.pdf

JMSL1010AGQ 100V 8.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.9 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 68 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 8.0 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

 5.2. Size:325K  jiejie micro
 jmsl1010ag.pdf

JMSL1010AG 100V 8.0m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 1.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 58 A RDS(ON)_Typ (@ VGS = 10V) 8.0 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 10.5 m Halogen-free and RoHS-compliant Applications Po

 5.3. Size:352K  jiejie micro
 jmsl1010ap.pdf

JMSL1010AP 100V 9.2m N-Ch Power MOSFET Product Summary Features Parameter Typ. Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_typ 1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 11 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V) 9.2 m RDS(ON) (@ VGS = 4.5V) 11.8 m Halogen-free and RoHS-compliant Applications Power Manager

 5.4. Size:335K  jiejie micro
 jmsl1010au.pdf

JMSL1010AU 100V 9.6m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 1.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 38 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 9.6 m RDS(ON)_Typ (@ VGS = 4.5V) 12.0 m Halogen-free and RoHS-compliant Applications Powe

 5.5. Size:423K  jiejie micro
 jmsl1010auq.pdf

JMSL1010AUQ 100V 8.5m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.9 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 46 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 8.5 m RDS(ON)_Typ (@ VGS = 4.5V) 10.5 m Halogen-free and RoHS-compliant AEC-Q101

 5.6. Size:348K  jiejie micro
 jmsl1010akq.pdf

JMSL1010AKQ 100V 8.3m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.9 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 86 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 8.3 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

 5.7. Size:326K  jiejie micro
 jmsl1010ak.pdf

JMSL1010AK 100V 8.3m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 1.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 70 A RDS(ON)_Typ (@ VGS = 10V) 8.3 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 10.8 m Halogen-free and RoHS-compliant Applications Po