DMN2400UFB4 Todos los transistores

 

DMN2400UFB4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMN2400UFB4
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.47 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 0.75 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.9 V
   Qgⓘ - Carga de la puerta: 0.5 nC
   Cossⓘ - Capacitancia de salida: 36 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm
   Paquete / Cubierta: X2DFN10063

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DMN2400UFB4 Datasheet (PDF)

 ..1. Size:456K  diodes
dmn2400ufb4.pdf

DMN2400UFB4
DMN2400UFB4

DMN2400UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: X2-DFN1006-3 Low Gate Threshold Voltage Case Material: Molded Plastic, "Green" Molding Compound; Low Input Capacitance UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage

 4.1. Size:374K  diodes
dmn2400ufb.pdf

DMN2400UFB4
DMN2400UFB4

DMN2400UFB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max TA = +25C Low Gate Threshold Voltage Low Input Capacitance 0.55 @ VGS = 4.5V 0.75A Fast Switching Speed 20V 0.75 @ VGS = 2.5V 0.63A Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protect

 5.1. Size:319K  diodes
dmn2400ufd.pdf

DMN2400UFB4
DMN2400UFB4

DMN2400UFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) Very low Gate Threshold Voltage, 1.0V Max TA = +25C Low Input Capacitance 0.9A 0.6 @ VGS = 4.5V Fast Switching Speed 0.7A 0.8 @ VGS = 2.5V 20V ESD Protected Gate 0.5A 1.0 @ VGS = 1.8V Totally Lead-Free & F

 6.1. Size:151K  diodes
dmn2400uv.pdf

DMN2400UFB4
DMN2400UFB4

DMN2400UVDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-563 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Finish Ma

Otros transistores... DMN2112SN , DMN2114SN , DMN2170U , DMN2215UDM , DMN2230U , DMN2300U , DMN2300UFB , DMN2300UFB4 , IRF540 , DMN2400UV , DMN26D0UDJ , DMN26D0UFB4 , DMN26D0UT , DMN2990UDJ , ZXM61N02F , ZXM62N02E6 , ZXM64N02X .

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