JMSL0606AC Datasheet. Equivalente

 ..1. Size:321K  jiejie micro
 jmsl0606ac jmsl0606ae.pdf

JMSL0606AC JMSL0606AE 60V 5.2m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 115 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 5.2 m RDS(ON)_Typ (@ VGS = 4.5V) 7.0 m Halogen-free and RoHS-compliant Applications

 5.1. Size:277K  1
 jmsl0606ag.pdf

JMSL0606AG 60V 4.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.8 V High Current Capability ID (@ VGS = 10V) (1) 97 A RDS(ON)_Typ(@ VGS = 10V) 4.0 m 100% UIS Tested, 100% Rg Tested RDS(ON) _Typ(@ VGS = 4.5V) 5.2 m Applications Power Managerment in Telecom., Industrial

 5.2. Size:352K  jiejie micro
 jmsl0606akq.pdf

JMSL0606AKQ 60V 4.6m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 93 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 4.6 m RDS(ON)_Typ (@ VGS = 4.5V) 6.0 m Halogen-free and RoHS-compliant AEC-Q101 Qu

 5.3. Size:338K  jiejie micro
 jmsl0606auq.pdf

JMSL0606AUQ 60V 5.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 59 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 5.0 m RDS(ON)_Typ (@ VGS = 4.5V) 6.0 m Halogen-free and RoHS-compliant AEC-Q101

 5.4. Size:518K  jiejie micro
 jmsl0606au.pdf

JMSL0606AU 60V 5.0mW N-Ch Power MOSFET Product Summary Features Parameter Typ. Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th) 1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 52 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 5.0 mW RDS(ON) (@ VGS = 4.5V) 6.6 mW Halogen-free and RoHS-compliant Applications Power Management in Compu

 5.5. Size:327K  jiejie micro
 jmsl0606ap.pdf

JMSL0606AP 60V 5.3m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 15 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 5.3 m RDS(ON)_Typ (@ VGS = 4.5V) 6.7 m Halogen-free and RoHS-compliant Applications Power

 5.6. Size:284K  jiejie micro
 jmsl0606agd.pdf

JMSL0606AGD 60V 6.4m N-Ch Power MOSFET Product Summary Features Parameter Typ. Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th) 1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 55 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 6.4 m RDS(ON) (@ VGS = 4.5V) 7.6 m Halogen-free and RoHS-compliant Applications Power Managerment

 5.7. Size:410K  jiejie micro
 jmsl0606agq.pdf

JMSL0606AGQ 60V 4.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 103 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 4.0 m RDS(ON)_Typ (@ VGS = 4.5V) 5.2 m Halogen-free and RoHS-compliant AEC-Q101 Q

 5.8. Size:325K  jiejie micro
 jmsl0606ag.pdf

JMSL0606AG 60V 4.0m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 97 A RDS(ON)_Typ(@ VGS = 10V) 4.0 m Pb-free Lead Plating RDS(ON) _Typ(@ VGS = 4.5V) 5.2 m Halogen-free and RoHS-compliant Applications Power

 5.9. Size:327K  jiejie micro
 jmsl0606ak.pdf

JMSL0606AK 60V 4.6m N-Ch Power MOSFET Product Summary Features Parameter Typ. Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th) 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 90 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V) 4.6 m RDS(ON) (@ VGS = 4.5V) 6.0 m Halogen-free and RoHS-compliant Applications Power Management in

 5.10. Size:330K  jiejie micro
 jmsl0606agwq.pdf

JMSL0606AGWQ 60V 4.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 103 A Wettable Flanks design support high manufacturability and RDS(ON)_Typ (@ VGS = 10V) 4.0 m RDS(ON)_Typ (@ VGS = 4.5V) 5.2 m Automated Optica