ZXM61N02F Todos los transistores

 ..1. Size:212K  diodes
 zxm61n02f.pdf

ZXM61N02F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R =0.18 ; I =1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES Low on-res

 ..2. Size:151K  tysemi
 zxm61n02f zxm61n02fta.pdf

Product specification 20V N-CHANNEL ENHANCEMENT MODE MOSFET ZXM61N02F SUMMARY V =20V; R =0.18 ; I =1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from TY utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEAT

 0.1. Size:210K  zetex
 zxm61n02ftc.pdf

ZXM61N02F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R =0.18 ; I =1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES Low on-res

 0.2. Size:877K  cn vbsemi
 zxm61n02fta.pdf

ZXM61N02FTA www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/

 7.1. Size:188K  diodes
 zxm61n03f.pdf

ZXM61N03F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =30V; R =0.22 ; I =1.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES Low on-res

 7.2. Size:116K  tysemi
 zxm61n03f.pdf

Product specification ZXM61N03F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =30V; R =0.22 ; I =1.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from TY utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEAT

 7.3. Size:187K  zetex
 zxm61n03fta.pdf

ZXM61N03F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =30V; R =0.22 ; I =1.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES Low on-res

 7.4. Size:187K  zetex
 zxm61n03ftc.pdf

ZXM61N03F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =30V; R =0.22 ; I =1.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES Low on-res