JMSL0606PG
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JMSL0606PG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 96
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 60
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 114
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 29
nS
Cossⓘ - Capacitancia
de salida: 1178
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0042
Ohm
Paquete / Cubierta:
PDFN5X6-8L
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JMSL0606PG
Datasheet (PDF)
..1. Size:332K jiejie micro
jmsl0606pg.pdf 
JMSL0606PG60V 3.2m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 114 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.2 m RDS(ON)_Typ (@ VGS = 4.5V)4.5 m Halogen-free and RoHS-compliantApplications Power Ma
5.1. Size:1246K jiejie micro
jmsl0606pe.pdf
60V, 117A, 5.3m N-channel Power SGT MOSFETJMSL0606PEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 117 ARDS(ON)_Typ(@VGS=10V 4.2 mWRDS(ON)_Typ(@VGS=4.5V 5.3 mWApplications Load Switch PWM Application Po
5.2. Size:343K jiejie micro
jmsl0606pu.pdf
JMSL0606PU60V 3.9m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 69 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.9 m RDS(ON)_Typ (@ VGS = 4.5V)5.1 m Halogen-free and RoHS-compliantApplications Power Man
6.1. Size:277K 1
jmsl0606ag.pdf
JMSL0606AG60V 4.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.8 V High Current Capability ID (@ VGS = 10V) (1) 97 A RDS(ON)_Typ(@ VGS = 10V)4.0 m 100% UIS Tested, 100% Rg Tested RDS(ON) _Typ(@ VGS = 4.5V)5.2 mApplications Power Managerment in Telecom., Industrial
6.2. Size:352K jiejie micro
jmsl0606akq.pdf
JMSL0606AKQ60V 4.6m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 93 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.6 m RDS(ON)_Typ (@ VGS = 4.5V)6.0 m Halogen-free and RoHS-compliant AEC-Q101 Qu
6.3. Size:338K jiejie micro
jmsl0606auq.pdf
JMSL0606AUQ60V 5.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 59 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 5.0 m RDS(ON)_Typ (@ VGS = 4.5V)6.0 m Halogen-free and RoHS-compliant AEC-Q101
6.4. Size:518K jiejie micro
jmsl0606au.pdf
JMSL0606AU60V 5.0mW N-Ch Power MOSFETProduct SummaryFeaturesParameter Typ. Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 52 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 5.0 mW RDS(ON) (@ VGS = 4.5V)6.6 mW Halogen-free and RoHS-compliantApplications Power Management in Compu
6.5. Size:327K jiejie micro
jmsl0606ap.pdf
JMSL0606AP60V 5.3m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 15 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 5.3 m RDS(ON)_Typ (@ VGS = 4.5V)6.7 m Halogen-free and RoHS-compliantApplications Power
6.6. Size:284K jiejie micro
jmsl0606agd.pdf
JMSL0606AGD60V 6.4m N-Ch Power MOSFETProduct SummaryFeaturesParameter Typ. Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 55 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 6.4 m RDS(ON) (@ VGS = 4.5V)7.6 m Halogen-free and RoHS-compliantApplications Power Managerment
6.7. Size:410K jiejie micro
jmsl0606agq.pdf
JMSL0606AGQ60V 4.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 103 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.0 m RDS(ON)_Typ (@ VGS = 4.5V)5.2 m Halogen-free and RoHS-compliant AEC-Q101 Q
6.8. Size:325K jiejie micro
jmsl0606ag.pdf
JMSL0606AG60V 4.0m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 97 A RDS(ON)_Typ(@ VGS = 10V)4.0 m Pb-free Lead Plating RDS(ON) _Typ(@ VGS = 4.5V)5.2 m Halogen-free and RoHS-compliantApplications Power
6.9. Size:327K jiejie micro
jmsl0606ak.pdf
JMSL0606AK60V 4.6m N-Ch Power MOSFETProduct SummaryFeaturesParameter Typ. Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 90 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V)4.6 m RDS(ON) (@ VGS = 4.5V)6.0 m Halogen-free and RoHS-compliantApplications Power Management in
6.10. Size:330K jiejie micro
jmsl0606agwq.pdf
JMSL0606AGWQ60V 4.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 103 A Wettable Flanks design support high manufacturability and RDS(ON)_Typ (@ VGS = 10V)4.0 m RDS(ON)_Typ (@ VGS = 4.5V)5.2 mAutomated Optica
6.11. Size:321K jiejie micro
jmsl0606ac jmsl0606ae.pdf
JMSL0606ACJMSL0606AE60V 5.2m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 115 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)5.2 m RDS(ON)_Typ (@ VGS = 4.5V)7.0 m Halogen-free and RoHS-compliantApplications
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