JMSL0609AKQ Datasheet. Equivalente

 ..1. Size:402K  jiejie micro
 jmsl0609akq.pdf

JMSL0609AKQ 60V 7.4m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 59 A RDS(ON)_Typ (@ VGS = 10V) 7.4 Pb-free Lead Plating m RDS(ON)_Typ (@ VGS = 4.5V) 9.5 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Auto

 4.1. Size:349K  jiejie micro
 jmsl0609ak.pdf

JMSL0609AK 60V 7.4m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 56 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 7.4 m RDS(ON)_Typ (@ VGS = 4.5V) 9.5 m Halogen-free and RoHS-compliant Applications Power Managerme

 5.1. Size:319K  jiejie micro
 jmsl0609ap.pdf

JMSL0609AP 60V 7.5m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 13.6 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 7.5 m RDS(ON)_Typ (@ VGS = 4.5V) 9.5 m Halogen-free and RoHS-compliant Applications Power Manag

 5.2. Size:337K  jiejie micro
 jmsl0609auq.pdf

JMSL0609AUQ 60V 7.5m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 44 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 7.5 m RDS(ON)_Typ (@ VGS = 4.5V) 9.4 m Halogen-free and RoHS-compliant AEC-Q101 Qu

 5.3. Size:348K  jiejie micro
 jmsl0609ag.pdf

JMSL0609AG 60V 7.2m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 43 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 7.2 m RDS(ON)_Typ (@ VGS = 4.5V) 9.0 m Halogen-free and RoHS-compliant Applications Power Managem

 5.4. Size:414K  jiejie micro
 jmsl0609agq.pdf

JMSL0609AGQ 60V 7.2m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 67 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 7.2 m RDS(ON)_Typ (@ VGS = 4.5V) 9.0 m Halogen-free and RoHS-compliant AEC-Q101

 5.5. Size:371K  jiejie micro
 jmsl0609au.pdf

JMSL0609AU 60V 7.5m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 41 A RDS(ON)_Typ (@ VGS = 10V) 7.5 Pb-free Lead Plating m RDS(ON)_Typ (@ VGS = 4.5V) 9.4 m Halogen-free and RoHS-compliant Applications Power

 5.6. Size:328K  jiejie micro
 jmsl0609apd.pdf

JMSL0609APD 60V 7.0m N-Ch Power MOSFET Features Product Summary Parameter Ultra-low RDS(ON) Value Unit VDS 60 V Low Gate Charge VGS(th) 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 10 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 7.0 m RDS(ON)_Typ (@ VGS = 4.5V) Halogen-free and RoHS-compliant 9.5 m Applications Power Mana

 5.7. Size:331K  jiejie micro
 jmsl0609agwq.pdf

JMSL0609AGWQ 60V 7.2m N-Ch Power MOSFET Features Product Summary Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 67 A Wettable Flanks design support high manufacturability and RDS(ON)_Typ (@ VGS = 10V) 7.2 m Automated Optical Inspection (AOI) RDS(ON)_Typ (@ VGS