JMSL0610AGDQ
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JMSL0610AGDQ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 60
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 38
A
Tjⓘ - Temperatura máxima de unión: 175
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7.6
nS
Cossⓘ - Capacitancia
de salida: 309
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0106
Ohm
Paquete / Cubierta: PDFN5X6-8L-D
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JMSL0610AGDQ
Datasheet (PDF)
..1. Size:336K jiejie micro
jmsl0610agdq.pdf 
JMSL0610AGDQ60V 8.5m Dual N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 38 A RDS(ON)_Typ (@ VGS = 10V)8.5 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)10.2 m Halogen-free and RoHS-compliant AE
3.1. Size:332K jiejie micro
jmsl0610agd.pdf
JMSL0610AGD60V 8.5m Dual N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 35 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)8.5 m RDS(ON)_Typ (@ VGS = 4.5V)10.2 m Halogen-free and RoHS-compliantApplications Powe
7.1. Size:1237K jiejie micro
jmsl0612pp.pdf
60V, 11A, 11.4 m N-channel Power SGT MOSFETJMSL0612PPProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 11 A Pb-free platingRDS(ON)_Typ(@VGS=10V 8.0 mWRDS(ON)_Typ(@VGS=4.5V 11.4 mWApplications Load Switch P
7.2. Size:371K jiejie micro
jmsl0615agdq.pdf
JMSL0615AGDQ60V 10.5m Dual N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 33 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)10.5 m RDS(ON)_Typ (@ VGS = 4.5V)13.5 m Halogen-free and RoHS-compliant AEC-Q101
7.3. Size:284K jiejie micro
jmsl0615av.pdf
JMSL0615AV60V 9.8m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 21 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 9.8 m RDS(ON)_Typ (@ VGS = 4.5V)12.5 m Halogen-free and RoHS-compliantApplications Power Manag
7.4. Size:1235K jiejie micro
jmsl0612pu.pdf
60V, 40A, 10.6m N-channel Power SGT MOSFETJMSL0612PUProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 40 A Pb-free platingRDS(ON)_Typ(@VGS=10V 7.4 mWRDS(ON)_Typ(@VGS=4.5V 10.6 mWApplications Load Switch PW
7.5. Size:409K jiejie micro
jmsl0612agq.pdf
JMSL0612AGQ60V 9.5m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 52 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)9.5 m RDS(ON)_Typ (@ VGS = 4.5V)12.0 m Halogen-free and RoHS-compliant AEC-Q101 Qualifi
7.6. Size:404K jiejie micro
jmsl0612akq.pdf
JMSL0612AKQ60V 9.9m N-Ch Power MOSFETFeaturesProduct SummaryParameter Typ. Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 57 A RDS(ON) (@ VGS = 10V)9.9 Pb-free Lead Plating m RDS(ON) (@ VGS = 4.5V)12.6 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Appli
7.7. Size:313K jiejie micro
jmsl0615agd.pdf
JMSL0615AGD60V 10.5m Dual N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 31 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)10.5 m RDS(ON)_Typ (@ VGS = 4.5V)13.5 m Halogen-free and RoHS-compliantApplications Power M
7.8. Size:1192K jiejie micro
jmsl0612pg.pdf
60V, 67A, 10.5m N-channel Power SGT MOSFETJMSL0612PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds Tested VGS(th)_Typ 1.9 VID(@VGS=10V) 67 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 7.4 mWRDS(ON)_Typ(@VGS=4.5V 10.5 mWApplications Load Switch PWM Application Pow
7.9. Size:608K jiejie micro
jmsl06120uq.pdf
60V, 42A, 10.9m N-channel Power SGT MOSFETJMSL06120UQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)Parameters Value Unit Low Gate ChargeVDSS 60 V 100% UIS TestedVGS(th)_Typ 2.0 V 100% Vds TestedID(@VGS=10V) 42 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 7.3 mRDS(ON)_Typ(@VGS=4.5V 10.9 m AEC-Q101 QualifiedApplications
7.10. Size:1193K jiejie micro
jmsl0612pgq.pdf
60V, 72A, 10.5m N-channel Power SGT MOSFETJMSL0612PGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)ParametersValue Unit Low Gate ChargeVDSS 60 V 100% UIS TestedVGS(th)_Typ 1.9 V 100% Vds TestedID(@VGS=10V) 72 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 7.4 mW AEC-Q101 Qualified RDS(ON)_Typ(@VGS=4.5V 10.5 mWApplications
7.11. Size:1379K jiejie micro
jmsl0611pud.pdf
60V, 34A, 14.6m Dual N-channel Power SGT MOSFETJMSL0611PUDProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 34 A Pb-free plating RDS(ON)_Typ(@VGS=10V 11.3 mWRDS(ON)_Typ(@VGS=4.5V 14.6 mWApplications Load Switch
7.12. Size:1180K jiejie micro
jmsl0615pgdq.pdf
60V, 37A, 12.1m Dual N-channel Power SGT MOSFETJMSL0615PGDQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) ParametersValue Unit Low Gate ChargeVDSS 60 V 100% UIS TestedVGS(th)_Typ 1.9 V 100% Vds TestedID(@VGS=10V) 37 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 8.3 mW AEC-Q101 Qualified RDS(ON)_Typ(@VGS=4.5V 12.1 mWApplication
7.13. Size:349K jiejie micro
jmsl0612ag.pdf
JMSL0612AG60V 9.5m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 34 A RDS(ON)_Typ (@ VGS = 10V)9.5 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)12.0 m Halogen-free and RoHS-compliantApplications Power Mana
7.14. Size:282K jiejie micro
jmsl0615aud.pdf
JMSL0615AUD60V 11.0m Dual N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 24 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)11.0 m RDS(ON)_Typ (@ VGS = 4.5V)14.0 m Halogen-free and RoHS-compliantApplications Powe
7.15. Size:310K jiejie micro
jmsl0615apd.pdf
JMSL0615APD60V 12m Dual N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 9.7 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 12 m RDS(ON)_Typ (@ VGS = 4.5V)15 m Halogen-free and RoHS-compliantApplications Power Ma
7.16. Size:1234K jiejie micro
jmsl0611pu.pdf
60V, 34A, 12.2m N-channel Power SGT MOSFETJMSL0611PUProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 34 A Pb-free platingRDS(ON)_Typ(@VGS=10V 9.0 mWRDS(ON)_Typ(@VGS=4.5V 12.2 mWApplications Load Switch PW
7.17. Size:1230K jiejie micro
jmsl0611pp.pdf
60V, 10A, 12.3m N-channel Power SGT MOSFETJMSL0611PPProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 10 A Pb-free platingRDS(ON)_Typ(@VGS=10V 9.1 mWRDS(ON)_Typ(@VGS=4.5V 12.3 mWApplications Load Switch PW
7.18. Size:1266K jiejie micro
jmsl0612ppd.pdf
60V, 9.3A, 13.8m N-channel Dual Power SGT MOSFETJMSL0612PPDProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 9.3 A Pb-free platingRDS(ON)_Typ(@VGS=10V 10.3 mWRDS(ON)_Typ(@VGS=4.5V 13.8 mWApplications Load Switc
7.19. Size:296K jiejie micro
jmsl0612ak.pdf
JMSL0612AK60V 9.9m N-Ch Power MOSFETProduct SummaryFeaturesParameter Low RDS(ON) Value Unit VDS60 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 52 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)9.9 m RDS(ON)_Typ (@ VGS = 4.5V)12.6 m Halogen-free and RoHS-compliantApplications Power Mana
7.20. Size:1271K jiejie micro
jmsl0611pg.pdf
60V, 69A, 12.3m N-channel Power SGT MOSFETJMSL0611PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 69 A Pb-free platingRDS(ON)_Typ(@VGS=10V 9.1 mWRDS(ON)_Typ(@VGS=4.5V 12.3 mWApplications Load Switch PW
7.21. Size:307K jiejie micro
jmsl0612au.pdf
JMSL0612AU60V 10.0m N-Ch Power MOSFETFeaturesProduct Summary Low RDS(ON) Parameter Value Unit VDS60 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 38 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)10.0 m RDS(ON)_Typ (@ VGS = 4.5V) Halogen-free and RoHS-compliant 12.3 mApplications Power Mana
7.22. Size:1254K jiejie micro
jmsl0612pk.pdf
60V, 51A, 9.3m N-channel Power SGT MOSFETJMSL0612PKProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 51 A Pb-free platingRDS(ON)_Typ(@VGS=10V 6.8 mWRDS(ON)_Typ(@VGS=4.5V 9.3 mWApplications Load Switch PWM
7.23. Size:310K jiejie micro
jmsl0613apd.pdf
JMSL0613APD60V 10.5m Dual N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 10.2 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 10.5 m RDS(ON)_Typ (@ VGS = 4.5V)12.5 m Halogen-free and RoHS-compliantApplications P
7.24. Size:308K jiejie micro
jmsl0612auq.pdf
JMSL0612AUQ60V 10.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 36 A RDS(ON)_Typ (@ VGS = 10V)10.0 Pb-free Lead Plating m RDS(ON)_Typ (@ VGS = 4.5V)12.3 m Halogen-free and RoHS-compliant AEC-Q101 Qua
7.25. Size:331K jiejie micro
jmsl0615ap.pdf
JMSL0615AP60V 10m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 12.7 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)10 m RDS(ON)_Typ (@ VGS = 4.5V)13 m Halogen-free and RoHS-compliantApplications Power Manageme
7.26. Size:1307K jiejie micro
jmsl0611pgd.pdf
60V, 31A, 13.7m Dual N-channel Power SGT MOSFETJMSL0611PGDProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 31 ARDS(ON)_Typ(@VGS=10V 10.7 mWApplications RDS(ON)_Typ(@VGS=4.5V 13.7 mW Load Switch PWM Application
Otros transistores... JMSL0609AKQ
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