JMTG018N03A
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JMTG018N03A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 30
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 130
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 29
nS
Cossⓘ - Capacitancia
de salida: 863
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0018
Ohm
Paquete / Cubierta:
PDFN5X6-8L
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JMTG018N03A
Datasheet (PDF)
..1. Size:1070K jiejie micro
jmtg018n03a.pdf 
30V, 130A, 2m N-channel Power Trench MOSFETJMTG018N03AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 130 ARDS(ON)_Typ(@VGS=10V 1.5 mWApplicationsRDS(ON)_Typ(@VGS=4.5V 2.0 mW Load Switch PWM Application P
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jmtg016n04a.pdf
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jmtg040n03a.pdf
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9.2. Size:1425K jiejie micro
jmtg050p03a.pdf
-30V, -80A, 5.2m P-channel Power Trench MOSFETJMTG050P03AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS -30 V 100% Vds TESTEDVGS(th)_Typ -1.7 V Halogen-free; RoHS-compliantID(@VGS=-10V) -80 A Pb-free platingRDS(ON)_Typ(@VGS=-10V 3.7 mWRDS(ON)_Typ(@VGS=-4.5V 5.2 mWApplications Load Swit
9.3. Size:404K jiejie micro
jmtg060n06a.pdf
JMTG060N06ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Application 60V,90 A Load SwitchR
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jmtg060p03a.pdf
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9.5. Size:568K jiejie micro
jmtg080n04d.pdf
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jmtg062n04d.pdf
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jmtg075c03d.pdf
30V, 38A&-25A, 9.3m&27.7m N And P-channel Power Trench MOSFETJMTG075C03DProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters N P Unit 100% UIS TestedVDSS 30 -30 V 100% Vds TestedVGS(th)_Typ 1.6 -1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 38 -25 ARDS(ON)_Typ(@VGS=10V 6.7 19.8 mWRDS(ON)_Typ(@VGS=4.5V 9.3 27.7Applications mW
9.8. Size:1358K jiejie micro
jmtg080p03a.pdf
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jmtg070n06a.pdf
JMTG070N06ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Application 60V, 70A Load SwitchR
9.10. Size:1238K jiejie micro
jmtg021n04a.pdf
40V, 199A, 1.9m N-channel Power Trench MOSFETJMTG021N04AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 199 ARDS(ON)_Typ(@VGS=10V 1.6 mWApplications RDS(ON)_Typ(@VGS=4.5V 1.9 mW Load Switch PWM Application
9.11. Size:1312K jiejie micro
jmtg030p02a.pdf
20V, -85A, 4.2m P-channel Power Trench MOSFETJMTG030P02AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 20 V 100% Vds TestedVGS(th)_Typ -0.6 V Halogen-free; RoHS-compliantID(@VGS=-10V) -85 ARDS(ON)_Typ(@VGS=-4.5V 2.3 mWRDS(ON)_Typ(@VGS=-2.5V 3.0 mWApplicationsRDS(ON)_Typ(@VGS=-1.8V 4.2 mW L
9.12. Size:1121K jiejie micro
jmtg035n04l.pdf
40V, 100A, 3m N-channel Power Trench MOSFETJMTG035N04LProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 1.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 100 ARDS(ON)_Typ(@VGS=10V 2.4 mW Pb-free platingRDS(ON)_Typ(@VGS=4.5V 3.0 mWApplications Load Switch P
9.13. Size:1076K jiejie micro
jmtg027n04a.pdf
40V, 190A, 1.8m N-channel Power Trench MOSFETJMTG027N04AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 190 ARDS(ON)_Typ(@VGS=10V 1.8 mWApplicationsRDS(ON)_Typ(@VGS=8V 2.1 mW Load Switch PWM Application P
9.14. Size:514K jiejie micro
jmtg055n04a.pdf
JMTG055N04ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeaturesApplications 40V, 75A Load SwitchRDS(ON)
9.15. Size:1182K jiejie micro
jmtg035n04a.pdf
40V, 100A, 3.0m N-channel Power Trench MOSFETJMTG035N04AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 100 ARDS(ON)_Typ(@VGS=10V 3.0 mWApplications Load Switch PWM Application Power ManagementDG SP
9.16. Size:515K jiejie micro
jmtg040n03a.pdf
JMTG040N03ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeaturesApplications 30V, 80A Load SwitchRDS(ON)
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History: JMSL1070PY
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