JMSL1004RG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JMSL1004RG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 103
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 100
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 98
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25
nS
Cossⓘ - Capacitancia
de salida: 630
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0054
Ohm
Paquete / Cubierta:
PDFN5X6-8L
Búsqueda de reemplazo de JMSL1004RG MOSFET
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Selección ⓘ de transistores por parámetros
JMSL1004RG datasheet
..1. Size:1259K jiejie micro
jmsl1004rg.pdf 
100V, 98A, 4.1m N-channel Power SGT MOSFET JMSL1004RG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 100 V 100% Vds TESTED VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 98 A Pb-free plating RDS(ON)_Typ(@VGS=10V 4.1 mW Applications Load Switch PWM Application Power Manag
6.1. Size:325K jiejie micro
jmsl1004bg.pdf
JMSL1004BG 100V 3.4m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 117 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 3.4 m RDS(ON)_Typ (@ VGS = 4.5V) 4.3 m Halogen-free and RoHS-compliant Applications Powe
7.1. Size:301K jiejie micro
jmsl1008agq.pdf
JMSL1008AGQ 100V 6.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 88 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 6.0 m RDS(ON)_Typ (@ VGS = 4.5V) 8.0 m Halogen-free and RoHS-compliant AEC-Q101
7.2. Size:289K jiejie micro
jmsl1008ag.pdf
JMSL1008AG 100V 6.0m N-Ch Power MOSFET Features Product Summary Parameter Typ. Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 93 A RDS(ON) (@ VGS = 10V) 6.0 Pb-free Lead Plating m RDS(ON) (@ VGS = 4.5V) 8.0 m Halogen-free and RoHS-compliant Applications Power Managerment
7.3. Size:392K jiejie micro
jmsl1009akq.pdf
JMSL1009AKQ 100V 7.8m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 81 A RDS(ON)_Typ (@ VGS = 10V) 7.8 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 9.9 m Halogen-free and RoHS-compliant AEC-Q10
7.4. Size:325K jiejie micro
jmsl1008ak.pdf
JMSL1008AK 100V 6.7m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 82 A RDS(ON)_Typ (@ VGS = 10V) 6.7 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 8.5 m Halogen-free and RoHS-compliant Applications Pow
7.5. Size:1195K jiejie micro
jmsl1008pgq.pdf
100V, 92A, 8.3m N-channel Power SGT MOSFET JMSL1008PGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 100 V 100% UIS Tested VGS(th)_Typ 1.8 V 100% Vds Tested ID(@VGS=10V) 92 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 6.8 mW AEC-Q101 Qualified RDS(ON)_Typ(@VGS=4.5V 8.3 mW Applications
7.6. Size:325K jiejie micro
jmsl1006agq.pdf
JMSL1006AGQ 100V 4.7m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th) 1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 110 A RDS(ON) (@ VGS = 10V) 4.7 m Pb-free Lead Plating RDS(ON) (@ VGS = 4.5V) 5.9 m Halogen-free and RoHS-compliant AEC-Q101 Qualified
7.7. Size:1311K jiejie micro
jmsl1009pun.pdf
100V, 45A, 7.5m N-channel Power SGT MOSFET JMSL1009PUN Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 45 A Pb-free plating RDS(ON)_Typ(@VGS=10V 6.1 mW RDS(ON)_Typ(@VGS=4.5V 7.5 mW Applications Load Switch P
7.8. Size:1274K jiejie micro
jmsl1005pc.pdf
100V, 131A, 4.4m N-channel Power SGT MOSFET JMSL1005PC Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 131 A RDS(ON)_Typ(@VGS=10V 4.4 mW Applications Load Switch PWM Application Power Management D G S TO
7.9. Size:1233K jiejie micro
jmsl1009pp.pdf
100V, 12A, 9.2m N-channel Power SGT MOSFET JMSL1009PP Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 12 A Pb-free plating RDS(ON)_Typ(@VGS=10V 7.6 mW RDS(ON)_Typ(@VGS=4.5V 9.2 mW Applications Load Switch PW
7.10. Size:1241K jiejie micro
jmsl1006pgs.pdf
100V, 109A, 6.4m N-channel Power SGT MOSFET JMSL1006PGS Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 109 A RDS(ON)_Typ(@VGS=10V 4.4 mW Applications RDS(ON)_Typ(@VGS=4.5V 6.4 mW Load Switch PWM Application
7.11. Size:629K jiejie micro
jmsl1008mkq.pdf
100V, 56A, 9.0m N-channel Power SGT MOSFET JMSL1008MKQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 100 V 100% UIS Tested VGS(th)_Typ 1.7 V 100% Vds Tested ID(@VGS=10V) 56 A RDS(ON)_Typ(@VGS=10V 6.5 m Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=4.5V 9.0 m AEC-Q101 Qualified Applications
7.12. Size:1243K jiejie micro
jmsl1009pg.pdf
100V, 93A, 7.3m N-channel Power SGT MOSFET JMSL1009PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 93 A RDS(ON)_Typ(@VGS=10V 5.6 mW Applications RDS(ON)_Typ(@VGS=4.5V 7.3 mW Load Switch PWM Application Pow
7.14. Size:391K jiejie micro
jmsl1009au.pdf
JMSL1009AU 100V 7.6m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 67 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 7.6 m RDS(ON)_Typ (@ VGS = 4.5V) 9.7 m Halogen-free and RoHS-compliant Applications
7.15. Size:1193K jiejie micro
jmsl1005pk.pdf
100V, 71A, 5.2m N-channel Power SGT MOSFET JMSL1005PK Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 71 A RDS(ON)_Typ(@VGS=10V 4.2 mW Applications RDS(ON)_Typ(@VGS=4.5V 5.2 mW Load Switch PWM Application Pow
7.16. Size:1240K jiejie micro
jmsl1006pg.pdf
100V, 115A, 5.5m N-channel Power SGT MOSFET JMSL1006PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 115 A RDS(ON)_Typ(@VGS=10V 4.3 mW Applications RDS(ON)_Typ(@VGS=4.5V 5.5 mW Load Switch PWM Application P
7.17. Size:1287K jiejie micro
jmsl1009pk.pdf
100V, 88A, 5.8m N-channel Power SGT MOSFET JMSL1009PK Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 100 V 100% Vds TESTED VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 88 A Pb-free plating RDS(ON)_Typ(@VGS=10V 5.8 mW RDS(ON)_Typ(@VGS=4.5V 7.6 mW Applications Load Switch PWM
7.18. Size:399K jiejie micro
jmsl1009ak.pdf
JMSL1009AK 100V 7.8m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 78 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 7.8 m RDS(ON)_Typ (@ VGS = 4.5V) 9.9 m Halogen-free and RoHS-compliant Application
7.19. Size:355K jiejie micro
jmsl1009buq.pdf
JMSL1009BUQ 100V 7.7m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 76 A RDS(ON)_Typ (@ VGS = 10V) 7.7 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 10.0 m Halogen-free and RoHS-compliant AEC-Q1
7.21. Size:323K jiejie micro
jmsl1006ak.pdf
JMSL1006AK 100V 5.4m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 99 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 5.4 m RDS(ON)_Typ (@ VGS = 4.5V) 6.6 m Halogen-free and RoHS-compliant Applications Power
7.22. Size:308K jiejie micro
jmsl1006ag.pdf
JMSL1006AG 100V 4.7m N-Ch Power MOSFET Product Summary Features Parameter Typ. Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 1.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 108 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 4.7 m RDS(ON) (@ VGS = 4.5V) 5.9 m Halogen-free and RoHS-compliant Applications Power Managermen
7.23. Size:350K jiejie micro
jmsl1008ap.pdf
JMSL1008AP 100V 7.4m N-Ch Power MOSFET Product Summary Features Parameter Typ. Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_typ 1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 12 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 7.4 m RDS(ON) (@ VGS = 4.5V) 9.2 m Halogen-free and RoHS-compliant Applications Power Manager
7.24. Size:1226K jiejie micro
jmsl1009pf.pdf
100V, 53A, 5.8m N-channel Power SGT MOSFET JMSL1009PF Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 53 A RDS(ON)_Typ(@VGS=10V 5.8 mW Applications Load Switch PWM Application Power Management D G S TO-22
7.25. Size:394K jiejie micro
jmsl1009ag.pdf
JMSL1009AG 100V 7.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 77 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 7.0 m RDS(ON)_Typ (@ VGS = 4.5V) 8.9 m Halogen-free and RoHS-compliant Applications
7.26. Size:1205K jiejie micro
jmsl1005pg.pdf
100V, 128A, 5.3m N-channel Power SGT MOSFET JMSL1005PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 128 A RDS(ON)_Typ(@VGS=10V 4.3 mW Applications RDS(ON)_Typ(@VGS=4.5V 5.3 mW Load Switch PWM Application P
7.27. Size:402K jiejie micro
jmsl1009agq.pdf
JMSL1009AGQ 100V 7.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 80 A RDS(ON)_Typ (@ VGS = 10V) 7.0 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 8.9 m Halogen-free and RoHS-compliant AEC-Q10
7.28. Size:352K jiejie micro
jmsl1008akq.pdf
JMSL1008AKQ 100V 6.7m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 98 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 6.7 m RDS(ON)_Typ (@ VGS = 4.5V) 8.5 m Halogen-free and RoHS-compliant AEC-Q10
Otros transistores... JMTG027N04A
, JMTG030P02A
, JMTG035N04A
, JMTG035N04L
, JMTG050P03A
, JMTG055N04A
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, JMSL1004BG
, IRF540N
, JMSL1005PC
, JMSL1005PG
, JMSL1005PK
, JMSL1006AG
, JMSL1006AGQ
, JMSL1006AK
, JMSL1006PG
, JMSL1006PGQ
.
History: BF960S
| AGM065N10C
