JMSL1004RG
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JMSL1004RG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 103
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 100
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 98
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25
nS
Cossⓘ - Capacitancia
de salida: 630
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0054
Ohm
Paquete / Cubierta:
PDFN5X6-8L
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JMSL1004RG
Datasheet (PDF)
..1. Size:1259K jiejie micro
jmsl1004rg.pdf 
100V, 98A, 4.1m N-channel Power SGT MOSFETJMSL1004RGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 100 V 100% Vds TESTEDVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 98 A Pb-free platingRDS(ON)_Typ(@VGS=10V 4.1 mWApplications Load Switch PWM Application Power Manag
6.1. Size:325K jiejie micro
jmsl1004bg.pdf
JMSL1004BG100V 3.4m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 117 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)3.4 m RDS(ON)_Typ (@ VGS = 4.5V)4.3 m Halogen-free and RoHS-compliantApplications Powe
7.1. Size:301K jiejie micro
jmsl1008agq.pdf
JMSL1008AGQ100V 6.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 88 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)6.0 m RDS(ON)_Typ (@ VGS = 4.5V)8.0 m Halogen-free and RoHS-compliant AEC-Q101
7.2. Size:289K jiejie micro
jmsl1008ag.pdf
JMSL1008AG100V 6.0m N-Ch Power MOSFETFeatures Product SummaryParameter Typ. Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 93 A RDS(ON) (@ VGS = 10V)6.0 Pb-free Lead Plating m RDS(ON) (@ VGS = 4.5V)8.0 m Halogen-free and RoHS-compliantApplications Power Managerment
7.3. Size:392K jiejie micro
jmsl1009akq.pdf
JMSL1009AKQ100V 7.8m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 81 A RDS(ON)_Typ (@ VGS = 10V)7.8 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)9.9 m Halogen-free and RoHS-compliant AEC-Q10
7.4. Size:325K jiejie micro
jmsl1008ak.pdf
JMSL1008AK100V 6.7m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 82 A RDS(ON)_Typ (@ VGS = 10V)6.7 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)8.5 m Halogen-free and RoHS-compliantApplications Pow
7.5. Size:1195K jiejie micro
jmsl1008pgq.pdf
100V, 92A, 8.3m N-channel Power SGT MOSFETJMSL1008PGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)ParametersValue Unit Low Gate ChargeVDSS 100 V 100% UIS TestedVGS(th)_Typ 1.8 V 100% Vds TestedID(@VGS=10V) 92 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 6.8 mW AEC-Q101 Qualified RDS(ON)_Typ(@VGS=4.5V 8.3 mWApplications
7.6. Size:325K jiejie micro
jmsl1006agq.pdf
JMSL1006AGQ100V 4.7m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 110 A RDS(ON) (@ VGS = 10V)4.7 m Pb-free Lead Plating RDS(ON) (@ VGS = 4.5V)5.9 m Halogen-free and RoHS-compliant AEC-Q101 Qualified
7.7. Size:1311K jiejie micro
jmsl1009pun.pdf
100V, 45A, 7.5m N-channel Power SGT MOSFETJMSL1009PUNProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 45 A Pb-free platingRDS(ON)_Typ(@VGS=10V 6.1 mWRDS(ON)_Typ(@VGS=4.5V 7.5 mWApplications Load Switch P
7.8. Size:1274K jiejie micro
jmsl1005pc.pdf
100V, 131A, 4.4m N-channel Power SGT MOSFETJMSL1005PCProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 131 ARDS(ON)_Typ(@VGS=10V 4.4 mWApplications Load Switch PWM Application Power ManagementDG STO
7.9. Size:1233K jiejie micro
jmsl1009pp.pdf
100V, 12A, 9.2m N-channel Power SGT MOSFETJMSL1009PPProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 12 A Pb-free platingRDS(ON)_Typ(@VGS=10V 7.6 mWRDS(ON)_Typ(@VGS=4.5V 9.2 mWApplications Load Switch PW
7.10. Size:1241K jiejie micro
jmsl1006pgs.pdf
100V, 109A, 6.4m N-channel Power SGT MOSFETJMSL1006PGSProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 109 ARDS(ON)_Typ(@VGS=10V 4.4 mWApplications RDS(ON)_Typ(@VGS=4.5V 6.4 mW Load Switch PWM Application
7.11. Size:629K jiejie micro
jmsl1008mkq.pdf
100V, 56A, 9.0m N-channel Power SGT MOSFETJMSL1008MKQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate ChargeVDSS 100 V 100% UIS TestedVGS(th)_Typ 1.7 V 100% Vds Tested ID(@VGS=10V) 56 ARDS(ON)_Typ(@VGS=10V 6.5 m Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=4.5V 9.0 m AEC-Q101 QualifiedApplications
7.12. Size:1243K jiejie micro
jmsl1009pg.pdf
100V, 93A, 7.3m N-channel Power SGT MOSFETJMSL1009PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 93 ARDS(ON)_Typ(@VGS=10V 5.6 mWApplications RDS(ON)_Typ(@VGS=4.5V 7.3 mW Load Switch PWM Application Pow
7.13. Size:1289K jiejie micro
jmsl1006pgq.pdf
100V, 120A, 5.5m N-channel Power SGT MOSFETJMSL1006PGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) ParametersValue Unit Low Gate ChargeVDSS 100 V 100% UIS TestedVGS(th)_Typ 1.6 V 100% Vds TestedID(@VGS=10V) 120 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 4.5 mW AEC-Q101 Qualified RDS(ON)_Typ(@VGS=4.5V 5.5 mWApplications
7.14. Size:391K jiejie micro
jmsl1009au.pdf
JMSL1009AU100V 7.6m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 67 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)7.6 m RDS(ON)_Typ (@ VGS = 4.5V)9.7 m Halogen-free and RoHS-compliantApplications
7.15. Size:1193K jiejie micro
jmsl1005pk.pdf
100V, 71A, 5.2m N-channel Power SGT MOSFETJMSL1005PKProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 71 ARDS(ON)_Typ(@VGS=10V 4.2 mWApplications RDS(ON)_Typ(@VGS=4.5V 5.2 mW Load Switch PWM Application Pow
7.16. Size:1240K jiejie micro
jmsl1006pg.pdf
100V, 115A, 5.5m N-channel Power SGT MOSFETJMSL1006PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 115 ARDS(ON)_Typ(@VGS=10V 4.3 mWApplications RDS(ON)_Typ(@VGS=4.5V 5.5 mW Load Switch PWM Application P
7.17. Size:1287K jiejie micro
jmsl1009pk.pdf
100V, 88A, 5.8m N-channel Power SGT MOSFETJMSL1009PKProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TESTEDVDSS 100 V 100% Vds TESTEDVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 88 A Pb-free platingRDS(ON)_Typ(@VGS=10V 5.8 mWRDS(ON)_Typ(@VGS=4.5V 7.6 mWApplications Load Switch PWM
7.18. Size:399K jiejie micro
jmsl1009ak.pdf
JMSL1009AK100V 7.8m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 78 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 7.8 m RDS(ON)_Typ (@ VGS = 4.5V)9.9 m Halogen-free and RoHS-compliantApplication
7.19. Size:355K jiejie micro
jmsl1009buq.pdf
JMSL1009BUQ100V 7.7m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 76 A RDS(ON)_Typ (@ VGS = 10V)7.7 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)10.0 m Halogen-free and RoHS-compliant AEC-Q1
7.20. Size:656K jiejie micro
jmsl1008ac jmsl1008ae.pdf
JMSL1008ACJMSL1008AE100V 6.5mW N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 114 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 6.5 mW RDS(ON)_Typ (@ VGS = 4.5V)8.1 mW Halogen-free and RoHS-compliantApplications
7.21. Size:323K jiejie micro
jmsl1006ak.pdf
JMSL1006AK100V 5.4m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 99 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)5.4 m RDS(ON)_Typ (@ VGS = 4.5V)6.6 m Halogen-free and RoHS-compliantApplications Power
7.22. Size:308K jiejie micro
jmsl1006ag.pdf
JMSL1006AG100V 4.7m N-Ch Power MOSFETProduct SummaryFeaturesParameter Typ. Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)1.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 108 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 4.7 m RDS(ON) (@ VGS = 4.5V)5.9 m Halogen-free and RoHS-compliantApplications Power Managermen
7.23. Size:350K jiejie micro
jmsl1008ap.pdf
JMSL1008AP100V 7.4m N-Ch Power MOSFETProduct SummaryFeaturesParameter Typ. Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_typ1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 12 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 7.4 m RDS(ON) (@ VGS = 4.5V)9.2 m Halogen-free and RoHS-compliantApplications Power Manager
7.24. Size:1226K jiejie micro
jmsl1009pf.pdf
100V, 53A, 5.8m N-channel Power SGT MOSFETJMSL1009PFProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 53 ARDS(ON)_Typ(@VGS=10V 5.8 mWApplications Load Switch PWM Application Power ManagementDG STO-22
7.25. Size:394K jiejie micro
jmsl1009ag.pdf
JMSL1009AG100V 7.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 77 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)7.0 m RDS(ON)_Typ (@ VGS = 4.5V)8.9 m Halogen-free and RoHS-compliantApplications
7.26. Size:1205K jiejie micro
jmsl1005pg.pdf
100V, 128A, 5.3m N-channel Power SGT MOSFETJMSL1005PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 128 ARDS(ON)_Typ(@VGS=10V 4.3 mWApplications RDS(ON)_Typ(@VGS=4.5V 5.3 mW Load Switch PWM Application P
7.27. Size:402K jiejie micro
jmsl1009agq.pdf
JMSL1009AGQ100V 7.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 80 A RDS(ON)_Typ (@ VGS = 10V)7.0 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)8.9 m Halogen-free and RoHS-compliant AEC-Q10
7.28. Size:352K jiejie micro
jmsl1008akq.pdf
JMSL1008AKQ100V 6.7m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 98 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)6.7 m RDS(ON)_Typ (@ VGS = 4.5V)8.5 m Halogen-free and RoHS-compliant AEC-Q10
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