DMG4496SSS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMG4496SSS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 4.7 nC
   Cossⓘ - Capacitancia de salida: 493.5 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.029 Ohm
   Paquete / Cubierta: SO8

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DMG4496SSS Datasheet (PDF)

..1. Size:161K diodes
dmg4496sss.pdf

DMG4496SSSN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SO-8 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminal Connections: See Diagram

9.1. Size:159K diodes
dmg4466sss.pdf

DMG4466SSSN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SO-8 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminal Connections: See Diagram

9.2. Size:222K diodes
dmg4407sss.pdf

DMG4407SSSP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25C Fast Switching Speed 11m @ VGS = -20V -9.9A Lead Free By Design/RoHS Compliant (Note 1) "Green" Device, Halogan and Antimony Free (Note 2) -30V 17m @ VGS = -6V -8.2A Qualified to AEC-

9.3. Size:85K diodes
dmg4413lss.pdf

DMG4413LSSSINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOP-8L 7.5m @ VGS = -10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 10.2m @ VGS = -4.5V Moisture Sensitivity: Level 1 per J-STD-020D Low Gate Threshold Voltage Ter

9.4. Size:226K diodes
dmg4406lss.pdf

DMG4406LSSN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID max V(BR)DSS RDS(ON) max Low On-ResistanceTA = 25C Low Input Capacitance 11m @ VGS = 10V 10.3A Fast Switching Speed 30V Lead Free By Design/RoHS Compliant (Note 1) 15m @ VGS = 4.5V 9.3A "Green" D

9.5. Size:159K diodes
dmg4466sssl.pdf

DMG4466SSSLN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SO-8 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminal Connections: See Diagra

9.6. Size:154K diodes
dmg4435sss.pdf

DMG4435SSSP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SO-8 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminal Connections: See Diagram

9.7. Size:149K diodes
dmg4468lfg.pdf

DMG4468LFGN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: DFN3030-8 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020

9.8. Size:229K diodes
dmg4468lk3.pdf

DMG4468LK3 N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: TO252-3L Case Material: Molded Plastic, Green Molding Compound. Low Input Capacitance UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020

9.9. Size:266K inchange semiconductor
dmg4468lk3.pdf

isc N-Channel MOSFET Transistor DMG4468LK3FEATURESDrain Current I = 9.7A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 16m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

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