JMSL1040AUQ Todos los transistores

 ..1. Size:407K  jiejie micro
 jmsl1040auq.pdf

JMSL1040AUQ 100V 29m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 20 A RDS(ON)_Typ (@ VGS = 10V) 29 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 39 m Halogen-free and RoHS-compliant AEC-Q101 Qualifi

 4.1. Size:298K  jiejie micro
 jmsl1040aud.pdf

JMSL1040AUD 100V 31m Dual N-Ch Power MOSFET Product Summary Features Parameter Low Gate Charge Value Unit VDS 100 V 100% UIS Tested, 100% Rg Tested VGS(th)_Typ 2.0 V Pb-free Lead Plating ID (@ VGS = 10V) (1) 17 A Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 10V) 31 m RDS(ON)_Typ (@ VGS = 4.5V) 39 m Applications Power Management in C

 4.2. Size:336K  jiejie micro
 jmsl1040au.pdf

JMSL1040AU 100V 29m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low Gate Charge VDS 100 V 100% UIS Tested, 100% Rg Tested VGS(th)_Typ 2.0 V Pb-free Lead Plating ID (@ VGS = 10V) (1) 18 A RDS(ON)_Typ (@ VGS = 10V) Halogen-free and RoHS-compliant 29 m RDS(ON)_Typ (@ VGS = 4.5V) 38 m Applications Power Management in Computing,

 5.1. Size:377K  jiejie micro
 jmsl1040agq.pdf

JMSL1040AGQ 100V 29m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 27 A RDS(ON)_Typ (@ VGS = 10V) 29 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 39 m Halogen-free and RoHS-compliant AEC-Q101 Qualifi

 5.2. Size:323K  jiejie micro
 jmsl1040agdq.pdf

JMSL1040AGDQ 100V 28m Dual N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.9 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 22 A RDS(ON)_Typ (@ VGS = 10V) 28 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

 5.3. Size:304K  jiejie micro
 jmsl1040agd.pdf

JMSL1040AGD 100V 28m Dual N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 18.4 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 28 m RDS(ON)_Typ (@ VGS = 4.5V) 40 m Halogen-free and RoHS-compliant Applications Power

 5.4. Size:369K  jiejie micro
 jmsl1040ag.pdf

JMSL1040AG 100V 29m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 18.9 A RDS(ON)_Typ (@ VGS = 10V) 29 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 39 m Halogen-free and RoHS-compliant Applications Power Mana

 5.5. Size:341K  jiejie micro
 jmsl1040ac jmsl1040ae.pdf

JMSL1040AC JMSL1040AE 100V 30m N-Ch Power MOSFET Product Summary Features Parameter Typ. Unit Low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 1.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 26 A RDS(ON) (@ VGS = 10V) 30 Pb-free Lead Plating m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial Autom

 5.6. Size:280K  jiejie micro
 jmsl1040av.pdf

JMSL1040AV 100V 29m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low Gate Charge VDS 100 V Low Input Capacitance VGS(th)_Typ 1.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 4.7 A RDS(ON)_Typ (@ VGS = 10V) Excepcional RDS(ON) in Low-profile DFN2020-6L 29 m RDS(ON)_Typ (@ VGS = 4.5V) 37 m Pb-free Lead Plating Ha

 5.7. Size:337K  jiejie micro
 jmsl1040avq.pdf

JMSL1040AVQ 100V 29m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.9 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 10.6 A RDS(ON)_Typ (@ VGS = 10V) 29 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications U

 5.8. Size:493K  jiejie micro
 jmsl1040ak.pdf

JMSL1040AK 100V 32mW N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low Gate Charge VDS 100 V 100% UIS Tested, 100% Rg Tested VGS(th)_Typ 2.0 V Halogen-free and RoHS-compliant ID (@ VGS = 10V) (1) 24 A RDS(ON)_typ (@ VGS = 10V) 32 mW RDS(ON)_typ (@ VGS = 4.5V) 43 mW Applications Power Managerment in Telecom., Industrial Automation, CE

 5.9. Size:310K  jiejie micro
 jmsl1040apd.pdf

JMSL1040APD 100V 31m Dual N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 12.3 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 31 m RDS(ON)_Typ (@ VGS = 4.5V) 40 m Halogen-free and RoHS-compliant Applications Power M

 5.10. Size:285K  jiejie micro
 jmsl1040ay.pdf

JMSL1040AY 100V 30m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low Gate Charge VDS 100 V 100% UIS Tested, 100% Rg Tested VGS(th)_Typ 2.0 V Pb-free Lead Plating ID (@ VGS = 10V) (1) 13 A Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 10V) 30 m RDS(ON)_Typ (@ VGS = 4.5V) 38 m Applications Power Management in Computing,