JVL102Y MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

JVL102Y datasheet

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jvl102y.pdf pdf_icon

JVL102Y 100V 2.8mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% RggTested 100% UIS Tested, 100% R Tested ID (@ VGS = 10V) (1) 200 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 2.8 Pb-free Lead Plating m

8.1. Size:1079K jiejie micro
jvl102e.pdf pdf_icon

JVL102E 100V 2.1mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 246 A RDS(ON) (@ VGS = 10V) 2.1 mW Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-vehicle, Robotics Curr

8.2. Size:604K jiejie micro
jvl102t.pdf pdf_icon

JVL102T 100V 1.9mW TOLL N-Ch Power MOSFET Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 3.0 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 263 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.9 mW Halogen-free and RoHS-compliant Applications Power Management in Telecom., Ind

9.1. Size:788K jiejie micro
jvl101n.pdf pdf_icon

JVL101N 100V 1.3mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 325 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.3 mW Applications Power Management in Computing, CE, IE 4.0, Communications Current Switching in DC

Otros transistores... JMSL1040PGQ , JVE101N , JVE102G , JVE102T , JVE103T , JVL101N , JVL102E , JVL102T , AO3407 , JMTV3400A , JMTY11DN10A , JMTY2310A , JVC085T , JVC103K , JVC103T , JVC105E , JVC113T .