DMG4800LK3 Todos los transistores

 ..1. Size:237K  diodes
 dmg4800lk3.pdf

DMG4800LK3 N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case TO252-3L Case Material Molded Plastic, Green Molding Compound. Low Input Capacitance UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020

 ..2. Size:266K  inchange semiconductor
 dmg4800lk3.pdf

isc N-Channel MOSFET Transistor DMG4800LK3 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 17m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 6.1. Size:161K  diodes
 dmg4800lfg.pdf

 6.2. Size:143K  diodes
 dmg4800lsd.pdf

DMG4800LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SO-8 Low Input Capacitance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020D

 9.1. Size:154K  diodes
 dmg4812sss.pdf

DMG4812SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Product Summary Features DIOFET utilizes a unique patented process to monolithically ID max integrate a MOSFET and a Schottky in a single die to deliver V(BR)DSS RDS(on) TA = 25 C Low RDS(ON) - minimizes conduction losses Low VSD - reducing the losses due to body diode conduction 15m @ VGS= 10V 10

 9.2. Size:261K  diodes
 dmg4822ssd.pdf