DMG4822SSD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMG4822SSD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A

CARACTERÍSTICAS ELÉCTRICAS

   Cossⓘ - Capacitancia de salida: 478.9 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.031 Ohm
   Paquete / Cubierta: SO8

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DMG4822SSD Datasheet (PDF)

..1. Size:261K diodes
dmg4822ssd.pdf

DMG4822SSDDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance Low Input Capacitance ID max V(BR)DSS RDS(ON) max Low Input/Output leakage TA = +25C Low Gate Resistance 30V 20m @ VGS = 10V 10A Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

9.1. Size:161K diodes
dmg4800lfg.pdf

DMG4800LFGN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: DFN3030-8 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020

9.2. Size:237K diodes
dmg4800lk3.pdf

DMG4800LK3 N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: TO252-3L Case Material: Molded Plastic, Green Molding Compound. Low Input Capacitance UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020

9.3. Size:143K diodes
dmg4800lsd.pdf

DMG4800LSDDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SO-8 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020D

9.4. Size:154K diodes
dmg4812sss.pdf

DMG4812SSSN-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Product Summary Features DIOFET utilizes a unique patented process to monolithically ID max integrate a MOSFET and a Schottky in a single die to deliver: V(BR)DSS RDS(on) TA = 25C Low RDS(ON) - minimizes conduction losses Low VSD - reducing the losses due to body diode conduction15m @ VGS= 10V 10

9.5. Size:266K inchange semiconductor
dmg4800lk3.pdf

isc N-Channel MOSFET Transistor DMG4800LK3FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 17m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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